• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.820-832
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• 1986

In contrast to conventional liquid phase epitaxy of GaAs, surface kinetics limited growth is predominant in selective liquid phase epitaxy. For the stripe openings in the high-index crystal-lographic directions, the well-known facet formations and the decompositions into the low index planes or smooth circular surfaces are observed depending on the growth kinetics. For the low index direction stripe, surface kinetics limited growth is evident. By a numerical calcualtion we show that these phenomena are due to the enhanced masstransport by two dimensional diffusion and growth rate anisotropy which is found to be very stdrong with cusped minima for some singular planes in the solution growth as well as in vapor phase epitaxy. Morphological stability is briefly treated in terms of diffusion and its implications on device application are stated. Tese phenomena may be common to III-V compound semiconductors as well as GaAs.

• Journal of the Korean Geotechnical Society
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• v.22 no.5
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• pp.5-12
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• 2006

In this study a series of tests (bench scale test) are carried out for increasing the strength of clayey soil by EK-Injection method. In addition, the effects of strength increase in the treated sample are measured by operating the vane shear test device during 25 days at 5 days intervals in order to estimate the effect of ground improvement caused by diffusion. Also, the effects of strength increase in the treated sample are measured by operating the vane shear test device to estimate the effect by treatment durations (5, 10, 15, 20, 25). The test results show that the strength increase was developed approximately 2 to 7 times in comparison to initial shear strength, and outstanding strenfth increase was created as much as 7 times while injecting the sodium silicate and phosphoric acid in anolyte and catholyte. In addition, the measured shear strength with the influence of diffusion and reduction of water-content had a tendency to converge in constant value in proportion to elapsed time. As a result of this study, strength increment developed by the influence of EK-Injection and diffusion rather than the reduction of water-content was 1000% high on average. In case of changes of treatment duration, strength increment developed by the influence of treatment durations rather than the reduction of water-content was 3 to 4 times high on average.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.135-138
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• 1991

A planar type PIN photodiode has been fabricated and discussed. We used OMVPE systems to grow the structure of u-InP/u-InP/n-InP. P-n junction was formed by Zn-diffusion method at 50$0^{\circ}C$, for 5 minitues. The device characteristics at 5V were as follows: Dark currents were distributed around 1nA. Capacitance was 1.6pF and responsivity was above 0.85 mA/mW for 1.3${\mu}{\textrm}{m}$ wavelength. Measured cut-off frequency(-3dB) at -5V was 1.1㎓.

• International Journal of Contents
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• v.8 no.4
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• pp.36-41
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• 2012

We present a novel watercolor painting drawing system which can work even on low powered computing machine such as tablet PC. Most digital watercolor systems are generated to perform on desktop, not low powered mobile computing system such as iPad. Our system can be utilized for art education besides professional painters. Our system is not a naïve imitation of real watercolor painting, but handles with properties of watercolor such as diffusion, boundary salience, and mixing of water and pigment.

• Korean Journal of Crystallography
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• v.16 no.2
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• pp.89-101
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• 2005

Among many material processing related issues for successful scaling down of devices for the next 10 years or so, the advanced gate stack and interconnect technology are two most critical research areas, which need technical innovation. The introduction of new metallic films and appropriate processing technologies are required more than ever. Especially, as the device downscaling continues well into sub 50 nm regime, the paradigm for metal nano film deposition technique research has been shifted to high conformality, low growth temperature, high quality with uniformity at large area wafers. Regarding these, ALD has sparked a lot of interests for a number of reasons. The process is intrinsically atomic in nature, resulting in the controlled deposition of films in sub-monolayer units with excellent conformality. In this paper, the overview on the current issues and the future trends in device processing technologies related to metal nano films as well as the R&D trends in these applications will be discussed. The focus will be on the applications for metal gate, capacitor electrode for DRAM, and diffusion barriers/seed layers for Cu interconnect technology.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.928-931
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• 2003

In order to realize full color display, two approaches were used. The first method is the patterning of red, green, and blue emitters using a selective deposition. Another approach is based on a white-emitting diode, from which the three primary colors could be obtained by micro-patterned color filters. White-light-emitting organic light emitting devices (OLEDs) are attracting much attention recently due to potential applications such as backlights in liquid crystal displays (LCDs) or other illumination purposes. In order for the white OLEDs to be used as backlights in LCDs, the light emission should be bright and have Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.33, 0.33). For obtaining white emission from OLEDs, different colours should be mixed with proper balances even though there are a few different methods for mixing colors. In this study, we will report a white organic electroluminescent device using exciton diffusion length concept.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.10a
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• pp.7-10
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• 2003

Blue-light-emitting peiymer/dielectric nanolayer nanocomposites were prepared by the solution intercalation method and employed in electroluminescent device. Their photoluminescence and electroluminescence characteristics suggested that the nanolayers isolate the polymer chains and hinder the formation of excimers and aggregates. By reducing the excimer formation and its deleterious effects on emission efficiency, both the color purity and the luminescence stability were improved. Furthermore, the dielectric nanolayers have an aspect ratio of about 500 and therefore act as efficient barriers to oxygen and moisture diffusion, which produced a dramatic increase in the device stability.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.178-178
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• 1999

Low temperature Si epitaxy can provide flexibility for a device designer to tailor or optimize the device performance. It is better method for controlling the doping thickness, concentration and profile than ion implantation and diffusion. But there is a limited growth thickness in this method. At a given temperature, the film grows epitaxially for a certain limiting thickness(hepi) and becomes amorphous. The transition from crystalline Si to amorphous Si is abrupt. In this study, Si film was deposited by ion beam sputter deposition on Si (0001) above a limiting thickness and measure the strain in the interface between crystalline Si and amorphous Si. The strain was compressive and the maximum value was about 2%.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.1-5
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• 2005

Continued scaling of MOS devices requires the formation of the ultra shallow and very heavily doped junction. The simulation and experiment results show that the degradation of pMOS performance in logic and SRAM pMOS devices due to the excessive diffusion of the tail and a large amount of dose loss in the extension region. This problem comes from the high-temperature long-time deposition process for forming the spacer and the presence of fluorine which diffuses quickly to the $Si/SiO_{2}$ interface with boron pairing. We have studied the method to improve the pMOS performance that includes the low-energy boron implantation, spike annealing and device structure design using TCAD simulation.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.162-163
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• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)