• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.563-564
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• 2006

Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A diamond disk use during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In. this study, we characterized diamond disk with 9 kinds of sample.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.263-264
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• 2011

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.569-573
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• 2012

We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Tribology and Lubricants
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• v.11 no.5
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• pp.156-161
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• 1995

The subsurface damaged layer in ultraprecisison machined single crystal Ge was examined by ion channeling. Single crystal Ge surfaces were prepared by chemo-mechanical polishing, mechanical polishing with 1/4 gm diamond abrasive, single point diamond turning and ultraprecision orthogonal flycutting. The extent of subsurface lattice disorder was compared to the crystal's orginal surface quality. Ion channeling is seen to be useful for quantitative measure of lattice disorder in finely finished surfaces.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.5
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• pp.76-81
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• 2014

The Engineering ceramics have some excellent properties as materials for modern mechanical and electrical components. It is, however, not easy to polish them efficiently because they are strong and hard. This study is carried out to obtain a mirror surface on engineering ceramics by surperfinishing with high efficiency. To achieve this, we conducted a series of polishing experiments using representative engineering ceramics, such as $Al_2O_3$, SiC, $Si_3N_4$ and $ZrO_2$, using diamond abrasive film from the perspective of oscillations peed, the rotational speed of the workpiece, contact roller hardness, contact pressure and feed rate. Furthermore, the polishing efficiency and characteristics for engineering ceramics are discussed on the basis of optimal polishing time and surface roughness. Our results confirmed that efficient superfinishing conditions and polishing characteristics of engineering ceramics can be determined.

• International Journal of Precision Engineering and Manufacturing
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• v.8 no.2
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• pp.38-43
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• 2007

This paper describes ultrasonically assisted grinding used to obtain a glossy surface quickly and precisely. High-quality surfaces are required for plastic injection molding dies used in the production of plastic parts such as dials for cellular phones. Traditionally, in order to finish the dies, manual polishing by a skilled worker has been required after the machining processes, such as electro discharge machining (EDM), which leaves an affected layer, and milling, which leaves tooling marks. However, manual polishing causes detrimental geometrical deviations of the die and consumes several days to finish a die surface. Therefore, a machining process for finishing dies without manual polishing to improve the surface roughness and form accuracy would be extremely valuable. In this study, a 3D positioning machine equipped with an ultrasonic spindle was used to conduct grinding experiments. An electroplated diamond tool was used for these experiments. Generally, diamond tools cannot grind steel because of excessive wear as a result of carbon atoms diffusing into bulk steel and chips. However, ultrasonically assisted grinding can achieve a fine surface (roughness Rz of $0.4{\mu}m$) on die steel without severe tool wear. The final aim of this study is to realize mirror surface grinding for injection molding dies without manual polishing. To do this, it is necessary to fabricate an electroplated diamond tool with high form accuracy and low run-out. This paper describes a tool-making method for high precision grinding and the grinding performance of a self-electroplated tool. The ground surface textures, tool performance and tool life were investigated A ground surface roughness Rz of 0.14 um was achieved Our results show that the spindle speed, feed rate and cross feed affected the surface texture. One tool could finish $5000mm^2$ of die steel surface without any deterioration of the ground surface roughness.