Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Molecular Dynamics Simulations Study on Abrasive's Speed Change Under Pad Compression

연마패드 압력에 따른 연마입자 이동속도 변화의 분자동역학적 시뮬레이션 연구

  • Lee, Gyoo-Yeong (School of Electronic, Information & Communication Engineering, Kangwon National University) ;
  • Lee, Jun-Ha (Department of Computer System Engineering, Sangmyung University) ;
  • Kim, Tae-Eun (Department of Multimedia, Namseoul University)
  • 이규영 (강원대학교 전자정보통신공학부) ;
  • 이준하 (상명대학교 컴퓨터시스템공학과) ;
  • 김태은 (남서울대학교 멀티미디어학과)
  • Received : 2012.04.20
  • Accepted : 2012.06.24
  • Published : 2012.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

Keywords

References

  1. K. Singh and R. Bajaj, MRS Bulletin, 27, 743 (2002). https://doi.org/10.1557/mrs2002.244
  2. K. Singh, S. M. Lee, K. S. Choi, G. B. Basim, W. Choi, Z. Chen, and B. M. Moudgil, MRS Bulletin, 27, 752 (2002). https://doi.org/10.1557/mrs2002.245
  3. Bajaj, A. Zutshi, R. Surana, M. Naik, and T. Pan, MRS Bulletin, 27, 776 (2002). https://doi.org/10.1557/mrs2002.249
  4. Evans, MRS Bulletin, 27, 779 (2002). https://doi.org/10.1557/mrs2002.250
  5. K. J. Lee, S. Y. Kim, and Y. J. Seo, J. KIEEME, 15, 939 (2002).
  6. C. B. Kim, S. Y. Kim, and Y. J. Seo, J. KIEEME, 15, 832 (2002).
  7. C. J. Park, S. Y. Kim, and Y. J. Seo, J. KIEEME, 15, 39 (2002).
  8. F. Preston, J. Soc. Glass Technol., 11, 214 (1927).
  9. W. T. Tseng and Y. L. Wang, J. Electrochem. Soc., 144, L15 (1997). https://doi.org/10.1149/1.1837417
  10. F. G. Shi and B. Zhao, Appl. Phys. A67, 249 (1998).
  11. M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Oxford University Press, 1987) p. 71.
  12. J. W. Kang and Y. G. Choi, J. Semicond. Display Tech., 10, 49 (2011).
  13. B. H. Park and J. W. Kang, J. Semicond. Display Tech., 10, 47 (2011).