• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.737-740
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.187-187
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

• Journal of IKEEE
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• v.14 no.2
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• pp.90-97
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• 2010

The high efficiency power management IC(PMIC) with DTMOS(Dynamic Threshold voltage MOSFET) switching device and DTMOS Error Amplifier is presented in this paper. PMIC is controlled with PWM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS(DT-CMOS) with low on-resistance is designed to decrease conduction loss. The control parts in Buck converter, that is, PWM control circuits consist of a saw-tooth generator, a band-gap reference circuit, an DT-CMOS error amplifier and a comparator circuit as a block. the proposed DT-CMOS Error Amplifier has 72dB DC gain and 83.5deg phase margin. also Error Amplifier that use DTMOS more than CMOS showed power consumption decrease of about 30%. DC-DC converter, based on Voltage-mode PWM control circuits and low on-resistance switching device is achieved the high efficiency near 96% at 100mA output current. And DC-DC converter is designed with Low Drop Out regulator(LDO regulator) in stand-by mode which fewer than 1mA for high efficiency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.151-158
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• 2002

In this paper, Phase locked microwave oscillator having the low phase noise and high stability for digital MMDS down converter was designed. we have been analyzed the low phase noise properties by the active device nonlinear equivalent circuits and derived the necessary and sufficient conditions for high stable voltage control oscillator. And it is applied to phase locked loop, we design the phase locked microwave oscillator of frequency synthesizer. Experimental results of designed phase locked oscillator shows -85dBc/Hz @ 10KHz phase noise properties and simulation result is -90Bc/Hz @ 10kHz respectively we shows that proposed low phase noise and stable conditions of phase locked microwave oscillator can be applied to design the high stable digital MMDS frequency synthesizer.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.1175-1182
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• 2005

Using KUCCS, which enables real-time monitoring and controlling, the various boundary condition and in-situ field stress condition was simulated, to derive the correlation among ${{\sigma}_v}'-Dr-N$in domestic sandy soils. Soil specimens, having various relative density and confined stress, were formulated to evaluate N-value from the SPT. and Pile Driving Analyzer, PDA, was employed as a measuring device for the energy transfer efficiency in the rod. From the quantitative analysis of N-value, the correlating equation, $N_{60}/{D_r}^2=16.35+14.45{{\sigma}_v}'$ was obtained on the basis of Skempton's method(1986). More reliable soil parameters can be obtained from the N-value by using this study which considered regional characters and the correlation among ${{\sigma}_v}'-Dr-N$.

• Radiation Oncology Journal
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• v.22 no.2
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• pp.130-137
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• 2004

Purpose : In radiotherapy for cervix cancer, both 3-dimensioal radiotherapy (3D-CRT) and intensity-modulated radiation therapy (IMRT) could reduce the dose to the small bowel (SB), while the small bowel displacement system (SBDS) could reduce the SB volume in the pelvic cavity. To evaluate the effect of the SBDS on the dose to the SB in 3D-CRT and IMRT plans, 3D-CRT and IMRT plans, with or without SBDS, were compared. Materials and Methods : Ten consecutive uterine cervix cancer patients, receiving curative radiotherapy, were accrued. Ten pairs of computerized tomography (CT) scans were obtained in the prone position, with or without SBDS, which consisted of a Styrofoam compression device and an individualized custom-made abdominal immobilization device. Both 3D-CRT, using the 4-field box technique, and IMRT plans, with 7 portals of 15 MV X-ray, were generated for each CT image, and proscribed 50 Gy (25 fractions) to the isocenter. For the SB, the volume change due to the SBDS and the DVHs of the four different plans were analyzed using palled t-tests. Results : The SBDS significantly reduced the mean SB volume from 522 to 262 cm$^{3}$ (49.8$\%$ reduction). The SB volumes that received a dose of 10$\~$50 Gy were significantly reduced in 3D-CRT (65$\~$80$\%$ reduction) and IMRT plans (54$\~$67$\%$ reduction) using the SBDS. When the SB volumes that received 20$\~$50 Gy were compared between the 3D-CRT and IMRT plans, those of the IMRT without the SBDS were significantly less, by 6$\~$7$\%$, than those for the 3D-CRT without the SBDS, but the volume difference was less than 1$\%$ when using the SBDS. Conclusion : The SBDS reduced the radiation dose to the SB in both the 3D-CRT and IMRT plans, so could reduce the radiation injury of the SB.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.6
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• pp.537-546
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• 2019

The paper actualizes the twin camera module system that is portable and very useful for the production of 3D contents. The suggested twin camera module system is a system to be able to display the 3D image after converting the inputted image from 2D stereo camera. To evaluate the performance of the twin camera module suggested in this paper, I assessed the correction of Rotation and Tilt created depending on the visual difference between the left and right stereoscopic image shot by the left and right lenses by using the Test Platform. In addition, I verified the efficiency of the twin camera module system through verifying Depth Error of 3D stereoscopic image by means of Scale Invariant Feature Transform(SIFT) algorithm. I think that if the user utilizes the suggested twin camera module system in displaying the image to the external after converting the shot image into the 3D stereoscopic image and the preparation image, it is possible to display the image in a matched way with an output device fit respectively for different 3D image production methods and if the user utilizes the system in displaying the created image in the form of the 3D stereoscopic image and the preparation image via different channels, it is possible to produce 3D image contents easily and conveniently with applying to lots of products.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.11
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• pp.943-950
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• 2016

The purpose of this study was to evaluate and compare by finite element analysis the biomechanical performance, in terms of cervical stand-alone cage screw insert angle (Type 3 - 5: 2 Screws) and screw arrangement (Type 6 and 7: 3 Screws / Type 8 and 9: 4 Screws), and the range of motion (ROM) of traditional anterior cervical discectomy of a fusion device (Type 1: Cage / Type 2: Cage + ACP). Our study suggests that the biomechanical behavior of a postoperative cervical spine could indeed be influenced by design features, such as screw angle and number of screws. In particular, ROM and the risk of subsidence were more sensitive during extension about type 5 (Insert Angle $20^{\circ}$). Our study also suggested that the number of screw asymmetries between up and down for type 6 and 7 could result in differences in the risk of screw fracture manifesting in different clinical aspects.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.