Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structure and Electrical Properties of SiGe HBTs Designed with Bottom Collector and Single Metal Contact

Bottom Collector와 단일 금속층 구조로 설계된 SiGe HBT의 전기적 특성

  • Choi, A.R. (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Choi, S.S. (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Yun, S.N. (KEC) ;
  • Kim, S.H. (ETRI) ;
  • Seo, H.K. (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University) ;
  • Shim, K.H. (School of Semiconductor and Chemical Engineering Semiconductor Physics Research Center, Chonbuk National University)
  • 최아람 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 최상식 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 윤석남 ;
  • 김상훈 ;
  • 서형기 (전북대학교 반도체.화학공학부 반도체 물성연구소) ;
  • 심규환 (전북대학교 반도체.화학공학부 반도체 물성연구소)
  • Published : 2007.06.21
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Abstract

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

Keywords

Acknowledgement

Supported by : 한국학술진흥재단