• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.109-111
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• 1997

In this paper, we have evaluated temperature, electric field, Pressure dependency and dielectric properties of EPDM XLPE and EPDM/XLPE\`s interface. Temperature dependency of EPDM had great influence with dielectric properties, but pressure and applied voltage of EPDM had no effect on dielectric properties. Dielectric properties of XLPE were influenced by not only temperature but also pressure and applied voltage. We knowed that dielectric properties of EPDM/XLPE were trended toward tendency of those of EPDM

• Journal of Microbiology and Biotechnology
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• v.19 no.11
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• pp.1456-1463
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• 2009

Vibrio parahaemolyticus possessing urease-positive property is relatively rare, but such strains consistently exhibit the TDH-related hemolysin (TRH) gene. In this study, we examined the effects of incubation temperature on urease activity expression, using the TH3996 and AQ4673 strains where the enzyme activity is known to be temperature-dependent and -independent, respectively. In the TH3996 strain, $\beta$-galactosidase activity was 4.4-fold lower after $30^{\circ}C$ cultivation than after $37^{\circ}C$ in a ureR-lacZ fusion strain, but temperature dependency was not found in ureD- or nikA-lacZ fusion strains. However, ureR-, ureD-, and nikA-lacZ fusions of the AQ4673 strain was not influenced by incubation temperature. We compared the promoter sequences of ureR between the above two strains. Intriguingly, we detected mismatches of two nucleotides between the two strains located at positions -66 and -108 upstream of the methionine initiation codon for UreR. Additionally, urease activity was not affected by culture temperature at either $30^{\circ}C$ or $37^{\circ}C$ by allelic introduction of the AQ4673 ureR gene into the TH3996 ureR deletion mutant. Taken together, our study demonstrates that the transcriptional factor UreR is involved in the temperature dependency of urease activity, and two nucleotides within the ureR promoter region are of particular importance for the urease activity dependency of V. parahaemolyticus.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.9
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• pp.1053-1057
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• 2012

In this study, the temperature-dependency of the tensile properties of a glass fiber reinforced plastic (GFRP) used in wind turbine blades was examined. The tensile strength, elastic modulus, and Poisson's ratio of the tensile specimen manufactured from uniaxial ($0^{\circ}$) and triaxial ($0/{\pm}45^{\circ}$) laminate composite plates were measured at four different testing temperatures-room temperature, $-30^{\circ}C$, $-50^{\circ}C$, and $60^{\circ}C$. It was found that the tensile strengths and elastic moduli of the uniaxial laminates were greater than those of the triaxial laminates over the testing temperature range. The tensile strength of the two laminates was significantly dependent on the testing temperature, while the dependency of the elastic modulus on the temperature was insignificant. Furthermore, it could be considered that the Poisson's ratio changed slightly with a change in the testing temperature.

• Journal of the Korean Society of Safety
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• v.9 no.1
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• pp.48-55
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• 1994

In this paper, It is studied that the variation of the dielectric absorption of the specimen according to the change with $^{60}$ Co-${\gamma}$ ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiated oriented polypropylene film, we have observed dielectric properties within the temporature range of 30~130 ($^{\circ}C$) and voltage range of 100~250 (V). As for the dependency of temperature by tan $\delta$, the $\alpha$ peak which appears at high temperature increases accordingly to the increment of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The $\beta$ peak which appears the orientation by dipoles and molecular motions in the amorphous region at low temperature. For the dependency of voltage by tan $\delta$ at low temperature, the peak of the tan $\delta$ shifts accordingly to the increment of irradiation dose towards the high temperature region.

• ETRI Journal
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• v.32 no.3
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• pp.406-413
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• 2010

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

• Preventive Nutrition and Food Science
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• v.12 no.2
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• pp.111-114
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• 2007

Water vapor adsorption kinetics of Inonotus mushroom powders were investigated in temperature and water activity ranges of 20 to 40$^{\circ}C$ and 0.30 to 0.81, respectively. Initial water vapor adsorption rate of mushroom powders increased with increases in temperature and water activity. The temperature dependency of water activity followed the Clausius-Clapeyron equation. The net isosteric heat of sorption increased with an increase in water activity. Water vapor adsorption kinetics of the mushroom powders can be well described by a simple empirical model. Temperature dependency of the reaction rate constant followed the Arrhenius relationship. The activation energy ranged from 56.86 to 91.35 kJ/mol depending on water activity. Kinetic compensation relationship was observed between k$_o$ and E$_a$ with the isokinetic temperature of 790.27 K.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.678-682
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• 2015

The electrical property of polymer matrix composites with added carbon powder is studied based on the temperature dependency of the conduction mechanism. The temperature coefficient of the resistance of the polymer matrix composites below the percolation threshold (x) changed from negative to positive at 0.20 < x < 0.21; this trend decreased with increasing of the percolation threshold. The temperature dependence of the electrical property(resistivity) of the polymer matrix composites below the percolation threshold can be explained by using a tunneling conduction model that incorporates the effect of the thermal expansion of the polymer matrix composites into the tunneling gap. The temperature coefficient of the resistance of the polymer matrix composites above the percolation threshold has a positive value; its absolute value increased with increasing volume fraction of carbon powder. By assuming that the electrical conduction through the percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of the carbon power, the temperature dependency of the resistivity above the percolation threshold can be well explained without violating the universal law of conductivity.

• Journal of Sensor Science and Technology
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• v.25 no.2
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• pp.124-130
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• 2016

NDIR $CO_2$ gas sensor was built with ASIC implemented thermopile sensor which included temperature sensor and unique elliptical waveguide structures in this paper. The temperature dependency of dual infrared sensor module ($CO_2$ and reference IR sensors) has been characterized and its output voltage characteristics according to the temperature and gas concentration were proposed for the first time. NDIR $CO_2$ gas and reference IR sensors showed linear output voltages according to the variation of ambient temperatures from 243 K to 333 K and their slopes were 14.2 mV/K and 8.8 mV/K, respectively. The output voltages of temperature sensor also presented a linear dependency according to the ambient temperature and could be described with V(T)=-3.191+0.0148T(V). The output voltage ratio between $CO_2$ and reference IR sensors revealed irrelevant to the changes of ambient temperatures and gave a constant value around 1.6255 with standard deviation 0.008 at 0 ppm. The output voltage of $CO_2$ gas sensor at zero ppm $CO_2$ gas consisted of two components; one is caused by the HPB (half pass-band) of IR filter and the other is attributed to the part of $CO_2$ absorption wavelength. The characteristics of output voltages of $CO_2$ gas sensor could be accurately modeled with three parameters which are dependent upon the ambient temperatures and represented small average error less than 1.5% with 5% standard deviation.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.377-381
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• 2016

NDIR $CO_2$ gas sensor was prototyped with ASIC implemented thermopile sensor which included temperature sensor and White-Cell structure in this paper. The temperature dependency of dual infrared sensors ($CO_2$ and reference IR sensors) has been characterized and their output voltage ratios according to the temperature and gas concentration were presented in this paper for achieving temperature compensation algorithm. The initial output voltages of NDIR $CO_2$ gas and reference IR sensors showed $3^{rd}$ order polynomial and linear output voltages according to the variation of ambient temperatures from 253 K to 333 K, respectively. The output voltages of temperature sensor presented a linear dependency according to the ambient temperature and could be described with V(T) = -3.0069+0.0145T(V). The characteristics of output voltage ratios could be modeled with five parameters which are dependent upon the ambient temperatures and gas concentration. The estimated $CO_2$ concentrations showed relatively high error below 300 ppm (maximum 572 % at 7 ppm $CO_2$ concentration), however, as the concentration increased from 500 ppm to 2,000 ppm, the overall estimated errors of $CO_2$ concentrations were less than ${\pm}10%$ in this research.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1636-1638
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• 1999

In this paper, humidity and temperature were carried out on XLPE sheet and XLPE/semi sheet. We measured voltage, temperature dependency and dielectric properties of humid dielectric materials. Dielectric losses of XLPE(A,B)/semi with and without humidity were $4.2{\times}10^{-4}$ and $3.6{\times}10^{-4},\;2.8{\times}10^{-4}$ and $3.2{\times}10^{-4}$, respectively, at room temperature. On the condition that humidity and semiconductors exist, we confirmed that dielectric properties had been influenced on semiconductor and humidity.