• ETRI Journal
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• v.18 no.4
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• pp.287-299
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• 1997

Integrated-optic polarization controlling devices such as polarizers, polarization splitters, and polarization converters, are proposed and demonstrated in nonlinear optic polymers. Poling-induced birefringence in electro-optic polymers is exploited to fabricate the devices. The polymeric waveguide polarizers show low excess losses, and extinction ratios of 20.7 dB and 17.1 dB for TM-pass and TE-pass polarizers, respectively. The polymeric waveguide polarization splitters exhibit TE-TM mode splittings with crosstalk of 14.2 dB and 10.1 dB for TM and TE mode splittings, respectively. The polymeric waveguide polarization converters show successful TE/TM polarization mode conversion with conversion efficiencies of higher than 30 dB. The device employs poling-induced waveguides which have slowly rotating azimuth angle of optic axis along the light propagation direction. The novel polarization converter is insensitive to wavelength and easier to fabricate than the other polarization converters containing periodic structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• Journal of Korean Society on Water Environment
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• v.21 no.2
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• pp.118-124
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• 2005

The oxygen solubilized device(O.S.D) and standardized microorganism culture system is more efficient than physical and chemical purification techniques in closed water. This study was to determine how the O.S.D and standardized culture system is efficient in purification capacity in closed water based on the lab scale and pilot plant. In the batch test, inducing the quantitative results from pilot plant operation condition, removal efficiency of COD and TN were about 48.3% and 35% respectively, while SS and chlorophyll-a were 94.9% and 68.7%. The pilot plant results showed that suspended solid(SS) and chlorophyll-a removal efficiency were 60% and 59% respectively, due to coagulation characteristics by standardized culture. Total nitrogen(TN) and total phosphorus(TP)showed good effect for the purification of target pond water quality from field data. Additionally, released velocity was determined in control condition of $5.31mgPO{_4}^{3-}{\cdot}m^{-2}{\cdot}day^{-1}$ and $2486.8mgCOD{\cdot}m^{-2}{\cdot}day^{-1}$. Otherwise, phosphate and COD reflux in the aeration and microorganism condition was showed $-9.95mgPO{_4}^{3-}{\cdot}m^{-2}{\cdot}day^{-1}$ and $-397.88mgCOD{\cdot}m^{-2}{\cdot}day^{-1}$. This technology is the most effective not only removal of SS and chlorophyll-a but also control of phosphate and COD release which is very important phenomena in evaluating water quality in closed water like a reservoir and pond.

• Journal of the Korea Institute of Building Construction
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• v.14 no.5
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• pp.407-413
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• 2014

Appropriate selection of lifting equipments for a high-rise building construction project is one of the important factors to the project's success. Proper position of a tower crane on a construction site is so important to be determined by an expert or an experienced construction manager who draws working range of a tower crane and moves it over 2D(dimensional) site layout plan. 3D CAD, BIM, and virtual reality are is used for building design and construction, but it is not usual to use them for temporary facility planning or selection of a tower crane. This study proposes a suitable method to use augmented reality to select proper position of tower cranes. An augmented reality prototype is implemented by Vuforia and Unity 3D on a smart device to verify the practicability of the proposed method. The prototype application installed on a smart device shows several tower cranes on different markers in a real architectural drawing to locate the proper tower crane.

• Advances in aircraft and spacecraft science
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• v.4 no.2
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• pp.145-167
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• 2017

The presented paper gives an overview of several projects addressing the experimental characterization and control of the buffet phenomenon on 3D turbulent wings in transonic flow conditions. This aerodynamic instability induces strong wall pressure fluctuations and therefore limits flight domain. Consequently, to enlarge the latter but also to provide more flexibility during the design phase, it is interesting to try to delay the buffet onset. This paper summarizes the main investigations leading to the achievement of open and closed-loop buffet control and its experimental demonstration. Several wind tunnel tests campaigns, performed on a 3D half wing/fuselage body, enabled to characterize the buffet aerodynamic instability and to study the efficiency of innovative fluidic control devices designed and manufactured by ONERA. The analysis of the open-loop databases demonstrated the effects on the usual buffet characteristics, especially on the shock location and the separation areas on the wing suction side. Using these results, a closed-loop control methodology based on a quasi-steady approach was defined and several architectures were tested for various parameters such as the input signal, the objective function, the tuning of the feedback gain. All closed-loop methods were implemented on a dSPACE device able to estimate in real time the fluidic actuators command calculated mainly from the unsteady pressure sensors data. The efficiency of delaying the buffet onset or limiting its effects was demonstrated using the quasi-steady closed-loop approach and tested in both research and industrial wind tunnel environments.

• Journal of Magnetics
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• v.10 no.2
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• pp.41-43
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• 2005

We have investigated an optical waveguide isolator with a multimode interference section by wafer direct bonding, operating at a wavelength $1.55\;{\mu}m$. In order to fabricate the device for monolithic integration, the wafer direct bonding between a magnetic garnet material as a cladding layer and a semiconductor guiding layer has been achieved. We found that wafer direct bonding between InP and GGG $(Gd_3Ga_5O_{12})$ is effective for the integration of a waveguide optical isolator. The isolation ratio was obtained to be 2.9 dB in the device.

• The korean journal of orthodontics
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• v.38 no.1
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• pp.13-30
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• 2008

Objective: The objective of this study was to evaluate the displacement pattern and the stress distribution of the finite element model 3-D visualization during symphyseal widening according to the osteotomy position, osteotomy type, and distraction device. Methods: The kinds of distraction devices used were tooth-borne type, hybrid type, bone-borne type and tooth-borne type $30^{\circ}$ angulated, and the kinds of osteotomy design were vertical osteotomy line between the central incisors and step osteotomy line through the symphysis. Results: All reference points of the mandible including the condyles were displaced laterally irrespective of the osteotomy position, osteotomy method and distraction device. The anteroposterior or vertical displacements showed small differences between the groups. The widening pattern of the osteotomy line in the tooth-borne type of device was v shaped, and that of bone-borne type was a reverse v shape. However, the pattern in the hybrid type was parallel. The lateral displacement of the mandibular angle by the bone-borne device was more remarkable than the other types of devices. The displacement by the $30^{\circ}$ angulated tooth-borne type was different between the left and right sides in both the transverse and anteroposterior aspects. Conclusion: The design of the distraction devices and osteotomy line can influence the displacement pattern and the stress distribution during mandibular symphyseal distraction osteogenesis procedures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.192-198
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• 2017

In this paper, we propose a novel double gate vertical channel tunneling field effect transistor (DVTFET) with a dielectric sidewall and optimization characteristics. The dielectric sidewall is applied to the gate region to reduced ambipolar voltage ($V_{amb}$) and double gate structure is applied to improve on-current ($I_{ON}$) and subthreshold swing (SS). We discussed the fin width ($W_S$), body doping concentration, sidewall width ($W_{side}$), drain and gate underlap distance ($X_d$), source doping distance ($X_S$) and pocket doping length ($X_P$) of DVTFET. Each of device performance is investigated with various device parameter variations. To maximize device performance, we apply the optimum values obtained in the above discussion of a optimization simulation. The optimum results are steep SS of 32.6 mV/dec, high $I_{ON}$ of $1.2{\times}10^{-3}A/{\mu}m$ and low $V_{amb}$ of -2.0 V.