• Management & Information Systems Review
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• v.35 no.2
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• pp.221-254
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• 2016

With increasing interest of health due to population aging, medical device industry is highlighted as a promising industry. However, Korea medical device industry is not enough market competitiveness compared to global company due to a narrow domestic market and a small company structure. In order to retain the national competitiveness, it is necessary that we have to derive a central technology and its trend. This study has predicted a central technology for medical device industrial using patent network analysis. The central technology is defined as a key technology that is connected to most other technologies and that significantly affects them. For the empirical study, we conducted social network analysis using covariance and correlation coefficient between IPC codes extracted from medical device patents, introduced by Jun(2012). A social network is a social structure of diverse items as well as of human beings. In this study, we set each medical device as a node in an SNA and analyze the Degree values between them. Also, Korea health industrial statistics system are utilized for verification of selected central technology. As a result, we found that the central technology is located on the medical device items, which are listed higher the amount of production. The central technology selected through the proposed methodology will provide a inspiration for establishment of R&D policy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.37 no.2
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• pp.121-127
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• 2011

Skin darkness is the source of trouble to many women. Skin darkness is the state that while skin redness and brightness are reduced, skin yellowness is increased. Skin translucency which is measured by skin color, especially brightness is an another expression of skin darkness. Skin brightness is usually expressed by L value of $L^{*} \;a^{*}\; b^{*}$ (CIELAB color space system). However, it is hard to find the relationship between L value and perceptive efficacy such as translucency because the L value is just a factor of evaluation of skin darkness. The skin with high translucency has high scattering reflective light value than low value. In this study, we measured the skin translucency of 20 ~ 30 ages men and women face by both our designed previous device which use polarized light to detect surface and scatter reflective light independently and $Lumiscan^{TM}$ which is improved designed to confirm our new device working ability by calculation of relationship between trnaslucency and scattering reflective light value. The result of this study indicate that there is a high correlation (R = 0.732, p < 0.01) between translucency and scattering reflective light value, and suggest that $Lumiscan^{TM}$ is portable and easy measuring device more that previous device.

• The Journal of the Acoustical Society of Korea
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• v.14 no.2
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• pp.30-39
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• 1995

In this paper, study on implementation of FFT analyzer applied to CAT, A/D conversion module, DSP module and VXIbus interface module are implemented in hardware and calculation program and control software are implemented in DSP module and VXIbus interface module, respectively. The control of the modules using PC is realized in software. The real time bandwidth of the FFT analyzing device is 100KHz. At sampling rate of 200KHz and with 2048 point FFT, the result of applying sine, triangular and rectangular wave of 20KHz to FFT analyzing device is compared with the FFT analyzed results of Hewlett-Packard 3562A dynamic output range of -40dBV- +30dBV, correct results are obtained and results of applying 10KHz, 20KHz and 50KHz input are compared and the correct values are obtained.

• Journal of Ocean Engineering and Technology
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• v.32 no.1
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• pp.9-20
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• 2018

The present study deals with the conceptual design of a motion reduction device for a floating wave-offshore wind hybrid power generation platform. A damping plate attached to the bottom of a column of a large semi-submersible is introduced to reduce the motion of the platform. Performance analyses on various shapes and configurations of damping plates were performed using the potential flow solver, and the appropriate configuration and size of the damping plate were selected based on the numerical results. In order to see the effect of viscous damping, a small scale model test was performed in a 2D wave flume. The performances of five different damping plates were measured and discussed based on the results of free decay tests and regular wave tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1244-1245
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• 2008

Recently, piezoelectric transformer is applied to wide fields. Multi layer piezoelectric transformer has the advantage of high step up ratio, electromechanical coupling coefficient(Kp) and mechanical quality factor(Qm), but is indicated of peeling-phenomenon of electrode, rising sintering temperature made price of costly electrode. So in this study, it discuss on method for fabrication of rosen type piezoelectric transformers. For the fabrication as rosen type piezoelectric transformers, synthesized the powder using 0.01Pb$(ni_{1/3}Nb_{2/3})O_3$ - 0.08Pb$(Mn_{1/3}Nb_{2/3})O_3$ - 0.91Pb$(Zr_{0506}Ti_{0496})O_3$ (abbreviated as PNN-PMN-PZT) ceramics. The density, microstructure, dielectric and piezoelectric properties as a function of sintering temperature were investigated. The results indicated that the optimized properties of ceramics were obtained at sintering temperature of 1200$^{\circ}C$, showed the value of $d_{33}$=273pC/N, $K_p$=0.60 $Q_m$=1585, ${\varepsilon}_r$=1454, density=7.917$g/cm^3$ and $tan{\delta}$=0.0064.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.35T no.2
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• pp.6-12
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• 1998

Thin film SOI(Silicon-on-insulator) device offer unique advantages such as reduction in short channel effects, improvement of subthreshold slope, higher mobility, latch-up free nature, and so on. But these devices exhibit floating-body effet such as current kink which inhibits the proper device operation. In this paper, the SOI NMOSFET with a T-type gate structure is proposed to solve the above problem. To simulate the proposed device with TSUPREM-4, the part of gate oxide was considered to be 30nm thicker than the normal gate oxide. The I-V characteristics were simulated with 2D MEDICI. Since part of gate oxide has different oxide thickness, the gate electric field strength is not same throughout the gate and hence the impact ionization current is reduced. The current kink effect will be reduced as the impact ionization current drop. The reduction of current kink effect for the proposed device structure were shown using MEDICI by the simulation of impact ionization current, I-V characteristics, and hole current distribution.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.