• Korean Journal of Optics and Photonics
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• v.18 no.4
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• pp.246-255
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• 2007

The floating image system (FIS) is a device to display input source in the space between fast surface of the display and an observer and it provides pseudo 3D depth to an observer when input source as real object or 2D image was displayed through the optical lens system in the FIS. The Advanced floating image system (AFIS) was designed to give more effective 3D depth than existing FIS by adding front and rear depth cues to the displayed stereogram, which it was used as input source. The magnitude of disparity and size of stereogram were strongly related each other and they have been optimized for presenting 3D depths in a non-optical lens systems. Thus, if they were used in optical lens system, they will have reduced or magnified parameters, leading to problem such as providing incorrect 3D depth cues to an observer. Although the size of stereogram and disparity were demagnified by total magnifying power of optical system, the viewing distance (VD) from the display to an observer and base distance (BD) for the gap between the eyes were fixed. For this reason, the quantity of disparity in displayed stereogram through the existing FIS has not kept the magnifying power to the total optical system. Therefore, we proposed the methods to provide correct 3D depth to an observer by compensating quantity of disparity in stereogram which was satisfied to keep total magnifying power of optical lenses system by AFIS. Consequently, the AFIS provides a good floating depth (pseudo 3D) with correct front and rear 3D depth cues to an observer.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2577-2582
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• 2013

A novel stick-shaped portable sensing device featuring a microhole array interface between the polyvinylchloride-2-nitrophenyloctylether (PVC-NPOE) gel and water phase was developed for in-situ sensing of perchlorate ions in real water samples. Perchlorate sensitive sensing responses were obtained based on measuring the current changes with respect to the assisted transfer reaction of perchlorate ions by a perchlorate selective ligand namely, bis(dibenzoylmethanato)Ni(II) (Ni(DBM)2) across the polarized microhole array interface. Cyclic voltammetry was used to characterize the assisted transfer reaction of perchlorate ions by the $Ni(DBM)_2$ ligand when using the portable sensing device. The current response for the transfer of perchlorate anions by $Ni(DBM)_2$ across the micro-water/gel interface linearly increased as a function of the perchlorate ion concentration. The technique of differential pulse stripping voltammetry was also utilized to improve the sensitivity of the perchlorate anion detection down to 10 ppb. This was acquired by preconcentrating perchlorate anions in the gel layer by means of holding the ion transfer potential at 0 mV (vs. Ag/AgCl) for 30 s followed by stripping the complexed perchlorate ion with the ligand. The effect of various potential interfering anions on the perchlorate sensor was also investigated and showed an excellent selectivity over $Br^-$, $NO_2{^-}$, $NO_3{^-}$, $CO{_3}^{2^-}$, $CH_3COO^-$ and $SO{_4}^{2^-}$ ions. As a final demonstration, some regional water samples from the Sincheon river in Daegu city were analyzed and the data was verified with that of ion chromatography (IC) analysis from one of the Korean-certified water quality evaluation centers.

• International Journal of Computer Science & Network Security
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• v.24 no.2
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• pp.25-30
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• 2024

Various new technologies and aiding instruments are always being introduced for the betterment of the challenged. This project focuses on aiding the mute in expressing their views and ideas in a much efficient and effective manner thereby creating their own place in this world. The proposed system focuses on using various gestures traced into texts which could in turn be transformed into speech. The gesture identification and mapping is performed by the Kinect device, which is found to cost effective and reliable. A suitable text to speech convertor is used to translate the texts generated from Kinect into a speech. The proposed system though cannot be applied to man-to-man conversation owing to the hardware complexities, but could find itself very much of use under addressing environments such as auditoriums, classrooms, etc

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.113-121
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• 1989

A software interface called CGI-K including device driver routines and graphics primitives for the grphic board "K" was designed, implemented in the Design Automation Laboratory of KAIST and installed on IBM PC/AT, using assembly and C language supported by TMS 34010 grphics processor. Several algorithms generating the graphics primitives such as box, circle, pie chord are proposed. The drawing speed of CGI-K on the graphic board K was found out to be three to ten times faster than that of the EGA for several examples. A 2-D graphics editor called GRIM (graphics input and modification) and a 3-dimensional graphics renderer called IPCHE which can draw 3-D objects were developed as two major application programs running on CGI-K. The graphics primitives supported in GRIM include polygon, box, circle, and ace. The IPCHE receives a 3-D objects data file and displays the 3-D object on the screen with hidden surface removal, shading, and perspective scaling.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1208-1213
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• 2010

In this paper, a microstrip balun-BPF of slotted-square-patch type is proposed. The conventional balun-BPF has some drawbacks of narrow bandwidth and high insertion loss. In order to improve these weak points, we used a square patch in designing balun-BPF on which two slots intersecting perpendicularly and one corner-edge perturbation are adopted. This structure allows one of the most effective use of the patch space so that the insertion loss can be decreased. Changing the slot lengths is use to control the operating frequency and the bandwidth of the balun-BPF. A fabricated balun-BPF shows wide bandwidth of 300 MHz(12.7 %), small insertion loss of 0.56 dB, phase difference of $184^{\circ}{\pm}15^{\circ}$ and amplitude imbalances of within 1 dB between two output ports at 2.4 GHz band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.305-314
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• 2007

In this paper, we suggested a CPW-fed UWB antenna with uni-planar sectoral structure. The area where radiation device face ground is designed to have the shape of tapered slot based on exponential function. We modified a rectangular bow-tie dipole structure antenna and thus formed a multi-resonant mode. From this, we expanded the impedance bandwidth and made a feature satisfying VSWR of less than 2 between $3.1\sim10.6GHz$. The test result showed that the return loss less than -10 dB was met in the full-band UWB system and maximum gain of $0.9\sim3.1dB$ was made with the half-power beamwidth of $40.1\sim89.9^{\circ}$ on XY plane(Theta, $Phi=90^{\circ}$) and the full band. By using CPW-fed structure with no ground on the back of the substrate, the suggested antenna is easy to design and its miniaturization is also possible.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.1-11
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• 2008

This work proposes a 15b 50MS/s CMOS pipeline ADC based on digital code-error calibration. The proposed ADC adopts a four-stage pipeline architecture to minimize power consumption and die area and employs a digital calibration technique in the front-end stage MDAC without any modification of critical analog circuits. The front-end MDAC code errors due to device mismatch are measured by un-calibrated back-end three stages and stored in memory. During normal conversion, the stored code errors are recalled for code-error calibration in the digital domain. The signal insensitive 3-D fully symmetric layout technique in three MDACs is employed to achieve a high matching accuracy and to measure the mismatch error of the front-end stage more exactly. The prototype ADC in a 0.18um CMOS process demonstrates a measured DNL and INL within 0.78LSB and 3.28LSB. The ADC, with an active die area of $4.2mm^2$, shows a maximum SNDR and SFDR of 67.2dB and 79.5dB, respectively, and a power consumption of 225mW at 2.5V and 50MS/s.

• The KIPS Transactions:PartD
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• v.9D no.5
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• pp.915-924
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• 2002

Conventional Systems for parcel sorting consist of two sequences as loading the parcel into conveyor belt system and post-code input. Using bar code information, the parcels to be recorded and managed are recognized. This paper describes a 32 $\times$ 32 sized mini-block inspection to extract bar code Region of Interest (ROI) from the line Charged Coupled Device (CCD) camera capturing image of moving parcel at 2m/sec speed. Firstly, the Min-Max distribution of the mini-block has been applied to discard the background of parcel and region of conveying belts from the image. Secondly, the diagonal inspection has been used for the extraction of letters and bar code region. Five horizontal line scanning detects the number of edges and sizes and ROI has been acquired from the detection. The wrong detected area has been deleted by the comparison of group size from labeling processes. To correct excluded bar code region in mini-block processes and for analysis of bar code information, the extracted ROI 8 boundary points and decline distribution have been used with central axis line adjustment. The ROI extraction and central axis creation have become enable within 60～80msec, and the accuracy has been accomplished over 99.44 percentage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Proceedings of the IEEK Conference
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• summer
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• pp.199-203
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• 2004

In this paper, we only describe the digital block of two-channel 18-bit analog-to-digital (A/D) converter employing sigma-delta method and xl28 decimation. The device contains two fourth comb filters with 1-bit input from sigma­delta modulator. each followed by a digital half band FIR(Finite Impulse Response) filters. The external analog sigma-delta modulators are sampled at 6.144MHz and the digital words are output at 48kHz. The fourth-order comb filter has designed 3 types of ways for optimal power consumption and signal-to-noise ratio. The following 3 digital filters are designed with 12tap, 22tap and 116tap to meet the specification. These filters eliminate images of the base band audio signal that exist at multiples of the input sample rate. We also designed these filters with 8bit and 16bit filter coefficient to analysis signal-to-noise ratio and hardware complexity. It also included digital output interface block for I2S serial data protocol, test circuit and internal input vector generator. It is fabricated with 0.35um HYNIX standard CMOS cell library with 3.3V supply voltage and the chip size is 2000um by 2000um. The function and the performance have been verified using Verilog XL logic simulator and Matlab tool.