• Electrical & Electronic Materials
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• v.9 no.7
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• pp.690-695
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• 1996

We have systematically investigated the characterization of V$_{2}$O$_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The V$_{2}$O$_{5}$ thin films were prepared by thermal vacuum evaporation with varing the substrate temperature and film thickness. In electrochromic devices for smart windows, the WO$_{3}$ thin films with 400-800 nm thickness require to be capable of reversibly injection 10-15 mC/cm$^{2}$ of lithium, which is readily accomplished charge-balanced switching in a V$_{2}$O$_{5}$ thin films with 100-150nm thick. The V$_{2}$O$_{5}$ thin films produces considerably small changes in optical modulation properties in the visible and near infrared region(500-1100 nm) compared to the amorphous WO$_{3}$ thin films on 10-15 mC/cm$^{2}$ of lithium injection and the V$_{2}$O$_{5}$ thin films can therefore act as a counter electrode to WO$_{3}$ in a lithium based complementary clectrochromic devices. After 10$^{5}$ coloration/bleaching switching time, the degradation does not occurs and the devices exhibit a stable optical modulation in V$_{2}$O$_{5}$ thin films. It has shown that the injected lithium ion amounts in crystalline V$_{2}$O$_{5}$ thin films with the same thickness is large by 3-5 mC/cm$^{2}$ of lithium compared to the amorphous thin films in the same driving conditions. Therefore, to optimize the device performance, it is necessary to choose an appropriate film thickness and crystallinity of V$_{2}$O$_{5}$ for amorphous WO$_{3}$ film thickness as a working electrode.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.1
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• pp.45-48
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• 2016

The treatment of obesity have been developed various devices for the treatment of obesity, the ultrasound is to be made after the state changes to become easy fat decomposition by heat and vibrations to facilitate the flow of blood and lymph fatty acid released into the blood. There is such ultrasonic transducer array is used in obesity therapy focusing angle of the transducer array and the frequency may have a significant impact on the degradation of fat. In this paper, we set the frequency that reaches the shortest time to a set temperature 27kHz, 1MHz, by applying a transducer with a diameter of 5mm, 10mm, 16mm for the frequency of 3MHz, obtain the wavelength and near the stomach in order to set the frequency of the transducer array, which was set to the focusing angle of the transducer with three contact surfaces. As a result, the time to reach the set temperature was short days when 3MHz frequency, the focusing angle is titrated is $40^{\circ}$.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.2
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• pp.235-240
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• 2006

Ionospheric scintillation induces a rapid change in the amplitude and phase of radio wave signals. This is due to irregularities of electron density in the F-region of the ionosphere. It reduces the accuracy of both pseudorange and carrier phase measurements in GPS/satellite based Augmentation system (SBAS) receivers, and can cause loss of lock on the satellite signal. Scintillation is not as strong at mid-latitude regions such that positioning is not affected as much. Severe effects of scintillation occur mainly in a band approximately 20 degrees on either side of the magnetic equator and sometimes in the polar and auroral regions. Most scintillation occurs for a few hours after sunset during the peak years of the solar cycle. This paper focuses on estimation of the effects of ionospheric scintillation on GPS and SBAS signals using a software receiver. Software receivers have the advantage of flexibility over conventional receivers in examining performance. PC based receivers are especially effective in studying errors such as multipath and ionospheric scintillation. This is because it is possible to analyze IF signal data stored in host PC by the various processing algorithms. A L1 C/A software GPS receiver was developed consisting of a RF front-end module and a signal processing program on the PC. The RF front-end module consists of a down converter and a general purpose device for acquiring data. The signal processing program written in MATLAB implements signal acquisition, tracking, and pseudorange measurements. The receiver achieves standalone positioning with accuracy between 5 and 10 meters in 2drms. Typical phase locked loop (PLL) designs of GPS/SBAS receivers enable them to handle moderate amounts of scintillation. So the effects of ionospheric scintillation was estimated on the performance of GPS L1 C/A and SBAS receivers in terms of degradation of PLL accuracy considering the effect of various noise sources such as thermal noise jitter, ionospheric phase jitter and dynamic stress error.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.2
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• pp.305-311
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• 2010

iATA (Internet Advanced Technology Attachment) is a block-level protocol developed to transfer ATA commands over TCP/IP network, as an alternative network storage solution to address insufficient storage problem in mobile devices. This paper employs RAID5 distributed storage servers concept into iATA, in which the idea behind is to combine several machines with relatively inexpensive disk drives into a server array that works as a single virtual storage device, thus increasing the reliability and speed of operations. In the case of one machine failed, the server array will not destroy immediately but able to function in a degradation mode. Meanwhile, information can be easily recovered by using boolean exclusive OR (XOR) logical function with the bit information on the remaining machines. We perform I/O measurement and benchmark tool result indicates that additional fault tolerance feature does not delay read/write operations with reasonable file size ranged in 4KB-2MB, yet higher data integrity objective is achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.11
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• pp.1543-1550
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• 2015

Ferroresonance is a non-linear vibrational phenomenon that is generated by the electrical interaction of the inductance component with the capacitor component of a certain capacitance as the device of the inductance component such as a transformer is saturated due to the degradation, the waveform distortion of current and voltage, and the oscillation of overcurrent and overvoltage in a system. Recently, ferroresonance was generated from the waveform distortion of current and voltage, or the overvoltage or undervoltage phenomenon caused by the nature of an electrical power system and design technology of the transformer in the three phase transformer system. Hence, in general, ferroresonance analyzed by converting to the LC equivalent circuit. However, in general, the aforementioned analytical method only applies to the resonance phenomenon that is generated by the interaction of the capacitance of bussbar and grounding, and switching as the capacitor component with PT and the transformer as the inductance component in a system. Subsequently, the condition where ferroresonance was generated since overvoltage was supplied as line voltage to the phase voltage and thus the iron core is saturated due to the interconnection between grounded and ungrounded systems could not be analyzed when single phase PT was connected in a ${\Delta}$/Y connection system. In this study, voltage swell in the configuration of grounded circuit of a step-up transformer with the ${\Delta}-{\Delta}$ connection linked to PT for control power and the ferroresonance generated by overvoltage when the line voltage of the ${\Delta}-{\Delta}$ connection was connected to the phase voltage of the grounded Y-Y connection were analyzed using PSCAD / EMTDC through the failure case of the transformer caused by ferroresonance in the system with the ${\Delta}-{\Delta}$/Y-Y connection, and subsequently, the preventive measure of ferroresonance was proposed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.257-257
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• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.