• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.2959-2962
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• 2013

As the concentration of aqueous $CD_3OH$ solutions was decreased, the OD peaks in $^2H$ NMR spectra grew relative to the $CD_3$ peaks. Isotope impurity for OH groups of $CD_3OH$ and deuterium naturally present in water contributed to the OD peaks. Using these peak area data, the site-specific isotope populations of isotope enriched chemicals were measured. In addition, the method using both $^1H$ and $^2H$ NMR spectroscopy was demonstrated with neat $CD_3OH$ to measure the site-specific isotope populations. The results indicate that although it represents only ~0.015% of hydrogen isotopes, the deuterium naturally present in solvents cannot be ignored, especially when the concentration of deuterium-enriched solutes is varied. Proton/deuteron exchange between methyl and methyl/hydroxyl groups was confirmed to be negligible, while that among hydroxyl groups was detectable.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.609-615
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• 2011

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.6-16
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• 2017

This study presents a coolant void reactivity analysis of Canada Deuterium Uranium (CANDU)-6 and Advanced Canada Deuterium Uranium Reactor-700 (ACR-700) fuel lattices using a Monte Carlo code. The reactivity changes when the coolant was voided were assessed in terms of the contributions of four factors and spectrum shifts. In the case of single bundle coolant voiding, the contribution of each of the four factors in the ACR-700 lattice is large in magnitude with opposite signs, and their summation becomes a negative reactivity effect in contrast to that of the CANDU-6 lattice. Unlike the coolant voiding in a single fuel bundle, the $2{\times}2$ checkerboard coolant voiding in the ACR-700 lattice shows a positive reactivity effect. The neutron current between the no-void and voided bundles, and the four factors of each bundle were analyzed to figure out the mechanism of the positive coolant void reactivity of the checkerboard voiding case. Through a sensitivity study of fuel enrichment, type of burnable absorber, and moderator to fuel volume ratio, a design strategy for the CANDU reactor was suggested in order to achieve a negative coolant void reactivity even for the checkerboard voiding case.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.148-153
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• 2024

As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.

• 한국자기공명학회논문지
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• 제1권2호
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• pp.95-102
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• 1997

Deuterium quadrupole coupling constant (e2qzzQ/h) of ($\mu$3-C2H)[Co(CO)3]3 was determined by using solid-state deuterium MAS NMR spectroscopy. The small quadrupole coupling constant of bridging methyne unit relative to sp-acethylene in propyne is discussed in terms of the C-H bond length and the negative charge on the carbon.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.6-6
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• 2009

We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects.

• 한국재료학회지
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• 제14권7호
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• pp.516-521
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• 2004

We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 ${\mu}m$ were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

• Rapid Communication in Photoscience
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• 제3권4호
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• pp.64-66
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• 2014

Synthesis of a deuterium-labeled derivative of nitrospirobenzopyran (NSP), one of representative photochromic compounds, has been described. Four deuteriums were successfully introduced on 1-methyl and ${\alpha}$-methyne relative to spiro-carbon in the title compound with more than 95atom%D purity. Main photodegraded products of NSP were two oxindoles in acetonitrile, and additional products were formed in poly(isobutyl-methacrylate) films possibly due to restricted molecular motion in polymer matrix. Quantitative HPLC analysis revealed that partial introduction of deuterium to NSP brought a noticeable isotope effect, recognizable enhancement in photo-resistivity of NSP, i.e.,8.3% in solutions and 29% in polymeric films.

• Carbon letters
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• 제13권4호
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• pp.248-253
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• 2012

Dielectrophoretic filtering and alignment of single-walled carbon nanotubes (SWCNTs) were tested using deuterium oxide as a solvent. A solution of deuterium oxide-SWCNTs was dropped on top of a silicon chip and an ac electric field was applied between pre-defined electrodes. Deuterium oxide was found to be a better solvent than hydrogen oxide for the dielectrophoresis process with higher efficiency of filtering. This was demonstrated by comparing Raman spectra measured on the initial solution with those measured on the filtered solution. We found that the aligned nanotubes along the electric field were not deposited on the substrate but suspended in solution, forming chain-like structures along the field lines. This so-called pearl chain formation of CNTs was verified by electrical measurements through the aligned tubes. The solution was frozen in liquid nitrogen prior to the electrical measurements to maintain the chain formation. The current-voltage characteristics for the sample demonstrate the existence of conduction channels in the solution, which are associated with the SWCNT chain structures.

• Nuclear Engineering and Technology
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• 제47권3호
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• pp.284-292
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• 2015

A numerical calculation with the commercial computational fluid dynamics code CFX-14.0 was conducted for a test facility simulating the Canadian deuterium uranium moderator thermal-hydraulic. Two kinds of moderator thermal-hydraulic tests at Stern Laboratories Inc. were performed in the full geometric configuration of the Canadian deuterium uranium moderator circulating vessel, which is called a calandria tank, housing a matrix of horizontal rod bundles simulating calandria tubes. The first of these tests is the pressure drop measurement of a cross flow in the horizontal rod bundles. The other is the local temperature measurement on the cross section of the horizontal cylinder vessel simulating the calandria system. In the present study, the full geometric details of the calandria tank are incorporated in the grid generation of the computational domain to which the boundary conditions for each experiment are applied. The numerical solutions are reviewed and compared with the available test data.