Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Gate Dielectric Characteristics in MOS Capacitor by Deuterium-ion Implantation Process

중수소 이온 주입에 의한 MOS 커패시터의 게이트 산화막 절연 특성 개선

  • Seo, Young-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Do, Seung-Woo (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Yong-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee, Jae-Sung (Department of Information and Communication Engineering, Uiduk University)
  • 서영호 (경북대학교 전자전기컴퓨터학부) ;
  • 도승우 (경북대학교 전자전기컴퓨터학부) ;
  • 이용현 (경북대학교 전자전기컴퓨터학부) ;
  • 이재성 (위덕대학교 정보통신공학과)
  • Received : 2010.02.24
  • Accepted : 2011.07.01
  • Published : 2011.08.01
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Abstract

This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

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References

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