• Journal of Magnetics
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• v.14 no.4
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• pp.144-146
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• 2009

This study examined the structure and perpendicular magnetization of FePt films grown on Pt/Fe/MgO(100) buffered Si(100) substrates by molecular beam epitaxy. The [Fe(0.17nm)/Pt(0.2nm)]$_N$ multilayers were prepared at room temperature to form a $L1_0$-FePt phase after vacuum annealing. Perpendicular magnetic anisotropy (PMA) was observed in the films after at least 15 repetitions (N = 15) of Fe/Pt deposition and annealing at $300{^{\circ}C}$ for 1 hour. Careful structural analysis of the films was carried out by x-ray diffraction and high-resolution transmission electron microscopy. These results will assist in the development of the low temperature $L1_0$- FePt deposition process, which will be essential for future extremely high density magnetic recording media.

• Journal of Electrochemical Science and Technology
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• v.1 no.1
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• pp.45-49
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• 2010

$Li_2PtO_3$ thin film electrodes, which might be possible candidate for the cathode materials for implantable batteries, were synthesized using an electrostatic spray deposition (ESD) technique onto a platinum foil substrate. Single phase $Li_2PtO_3$with a structure similar to layered $LiCoO_2$ structure were synthesized by spraying a precursor solution of $CH_3CO_2Li2H_2O$ in ethanol onto a Pt substrate at temperatures ranging from 200 to $400^{\circ}C$ followed by annealing at above $600^{\circ}C$. Lithium carbonate was the only major phase at temperatures up to $500^{\circ}C$. The X-ray diffraction (XRD) peaks of the Pt foil substrate and lithium carbonate disappeared at temperatures >$600^{\circ}C$. The volumetric capacity of the $Li_2PtO_3$ thin film synthesized using the ESD technique was approximately 817 mAh/$cm^3$, which exceeded that of $LiCoO_2$ (711 mAh/$cm^3$).

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.179-183
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• 2009

Toluene($C_6H_5CH_3$) gas sensors were fabricated using $PtO_x$ loaded with SWNTs by a new deposition method. The nanoparticle powders of SWNTs-$PtO_x$ composite were deposited on Si wafer substrates by a vacuum filtering deposition method. The fabricated sensors were tested against toluene gas which is a kind of the Volatile Organic Compounds. The composition ratio that exhibited the highest response to toluene gases was SWNTs : $PtO_x\;=\;99:1$ in wt% ratio at operating temperature of about $150^{\circ}C$. The response and recovery times of the sensors were as short as less than 1 min., respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.84.1-84.1
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• 2010

Since the discovery of the carbon nanotube(CNTs), they have attracted much attention because of unique properties that may impact many fields of science and technology. The considerable properties of CNTs include high surface area, outstanding thermal, electrical conductivity and mechanical stability. However, uniform deposition of Pt nanoparticles on carbon surface remains inaccessible territory because of the inert carbon surface. In this study, we prepared directly oriented CNTs on carbon paper as a catalyst support in cathode electrode. carbon surface was functionalized using aryl diazonium salt for increasing adhesion of Ni particles which is precursor for growing CNTs. For fabricate electrode, CNTs on carbon paper were grown by chemical vapor deposition using Ni catalyst and Pt nanoparticles were deposited on CNTs oriented carbon paper by polyol method. The performance was measured using Proton electrolyte Membrane Fuel Cell(PEMFC). The structure and morphology of the Pt nanoparticles on CNTs were characterized by Scanning electron Microscopy(SEM) and Transmission electron Microscopy (TEM). The average diameter of Pt nanoparticles was 3nm.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.100-105
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• 1998

This paper describes the preparation of Pt-and $TiO_2$-doped $Nb_2O_5$ thin film by Ion-Beam-Enhanced Deposition. Platinum and titanium doping, and Nb2O5 deposition were carried out in situ. The dependence of oxygen sensing properties on the amounts of Pt and Ti dopant in the $Nb_2O_5$ film was investigated. There were the highist sensitivity, the lowest temperature coefficient and the shortest responce time at doping of 5 mol% $TiO_2$ and 0.3 mol%Pt

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.160-160
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• 2013

Dye-sensitized solar cells (DSSCs) have attracted much attention because of their moderate light-to-electricity conversion efficiency, easy fabrication, and low cost. At present, platinum (Pt) is used as a counter electrode in DSSCs. However, it is found that Pt dissolves in iodide electrolyte solutions and creates chemical compound such as PtI4 and H2PtI6. Carbon based materials are one of candidates for a counter electrode of DSSCs. We prepare two types of graphite oxides by different chemical treatments; original graphite oxide, hydrazine treated graphite oxide. Each graphite oxide and magnesium nitrate dispersed in deionized water are prepared as solutions for electrophoretic deposition (EPD). Each graphite oxide electrode is deposited on fluorine-doped tin oxide (FTO) substrate by EPD method. Structural and electrochemical properties of each electrode are investigated by field-emission scanning electron microscopy and electrochemical impedance spectroscopy, respectively.

• Journal of the Korean Ceramic Society
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• v.36 no.4
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• pp.403-409
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• 1999

The dielectric and pyroelectric properties of $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) thin films growtn on Pt/Ti/NON/Si us-ing RF magnetron sputtering have been investigated. With increasing the substrate temperature during de-position of the BST film in the range of 300-$600^{\circ}C$ the dielectric and pyroelectric constants of the film were increased due to improved crystallinity of the film. In addition the dependence of the microstructural and electrical properties of BST films onthe deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BST films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrode was studied. The preferred orientation of the BSt films as well as the microstructure of the Pt film was greatly in-fluenced by the deposition temperature of the bottom Pt electrodes. and thus so were the pyrolelectric pro-perties of the BST film. The highest value of pyroelectric coefficient at room temperature obtained in this work was $nCcm^{-2}K^{-1}$ which is much higher than those previously reported on other perovskite fer-roelectric thin films.

• Journal of Industrial Technology
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• v.35
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• pp.89-94
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• 2015

Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4392-4396
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• 2011

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1250_1251
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• 2009

The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power, respectively. Also, The capacitance of SBN thin films were increased with the increase of deposition temperature.