Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Fabrication of Metal-Semiconductor Interface in Porous Silicon and Its Photoelectrochemical Hydrogen Production

  • Received : 2011.10.12
  • Accepted : 2011.10.26
  • Published : 2011.12.20
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Abstract

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

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