• Title/Summary/Keyword: Deposit thickness

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Analysis of the Effect of Screen Printing Variables on Thick Film Thickness (스크린인쇄조건에 따른 후막인쇄물의 잉크층 두께에 관한 분석)

  • Lim, Kyu-Jin;Yi, Arm;Shin, Jong-Soon
    • Journal of the Korean Graphic Arts Communication Society
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    • v.20 no.2
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    • pp.19-30
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    • 2002
  • Four screen mesh counts of 100, 150, 200, and 305 threads per inch are chosen and a designed test figure is exposed on them for printing experiment to measure the ink deposit thickness. Among a number of variables, the ink viscosity, the screen gap and the squeegee pressure and speed are estimated with their effected thickness. These variables affect as much as around 50% compared with the theoretical ink volume listed by the mesh manufacturer and each variable has different influence on the thickness. The data and graphs have been analyzed for the thick film production.

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A new method for in line electrokinetic characterization of cakes

  • Lanteri, Yannick;Ballout, Wael;Fievet, Patrick;Deon, Sebastien;Szymczyk, Anthony;Sauvade, Patrick
    • Membrane and Water Treatment
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    • v.4 no.3
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    • pp.157-174
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    • 2013
  • The present study is devoted to the validation of a new method for in line electrokinetic characterisation of deposits on membrane surfaces. This method is based upon simultaneous measurements of transversal streaming potential and permeates flux at constant pressure before and during the deposit formation. Dead-end filtration experiments were conducted with negative flat membranes forming a narrow slit channel, negative hollow fiber membranes and mono-dispersed suspensions of (negatively charged) polystyrene latex and (positively charged) melamine particles at various concentrations. It was observed that the overall streaming potential coefficient increased in absolute value with the deposited latex quantity, whereas it decreased and changed of sign during the filtration of melamine suspensions. By considering a resistance-in-series model, the streaming potential coefficient of the single deposit ($SP_d$) was deduced from the electrokinetic and hydraulic measurements. The independence of $SP_d$ with respect to growth kinetics validates the measurement method and the reliability of the proposed procedure for calculating $SP_d$. It was found that $SP_d$ levelled off much more quickly when filtration was performed through the slit channel. This different behaviour could result from a non-uniform distribution of the deposit thickness along the membrane given that the position of measuring electrodes is different between the two cells.

The Study of Solderability according to Chemical Analysis in Plating Process (도금공정의 액 분석에 따른 Solderability 개선 연구)

  • 이준호
    • Journal of the Korean institute of surface engineering
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    • v.36 no.2
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    • pp.168-175
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    • 2003
  • The purpose of solder plating on chip external electrode is to provide a proper solderability to chips on PCB's. The quantitative or qualitative analysis of solderability has been performed by destructive methods, reflow or flow. Evidently, the solderability tends to depend on the grain structure which is varied with additives. Research on the feasibility of employing electrochemical techniques to characterize the solderability of electroplated tin - lead, with respect to the additives, was non destructively performed. The deposit morphology and the polarization behavior of electrolytes containing proprietary additives were evaluated to investigate the soldering degradation. The plated panels from synthetic electrolyte were analyzed according to % Sn, plating thickness, deposit appearance, grain structure, solderability and cyclic voltammetry.

SILICON DIOXIDE FILMS FOR INTERMETAL DIELECTRIC APPLICATIONS DEPOSITED BY AN ECR HIGH DENSITY PLASMA SYSTEM

  • Denison, D.R.;Harshbarger, W.R.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S1
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    • pp.130-137
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    • 1995
  • Deopsition of thermal quality SiO2 using a high density plasma ECR CVD process has been demonstrated to give void and seam free gap fill of high aspect ratio metallization structures with a simple oxygen-silane chemistry. This is achieved by continuous sputter etching of the film during the deposition process. A two-step process is utilized to deposit a composite layer for higher manufacturing efficiency. The first step, which has a deposition rate of approximately 0.5 $\mu$m/min., is used to provide complete gap fill between the metal lines. The second step, which has a deposition rate of up to 1.5 $\mu$m/min., is used to deposit a total thickness of 2.0$\mu$m for the intermetal dielectric film. The topography of this composite film is very compatible with subsequent chemicl mechanical polishing(CMP) planarization processing.

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Thickness-dependent Electrical, Structural, and Optical Properties of ALD-grown ZnO Films

  • Choi, Yong-June;Kang, Kyung-Mun;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.31-35
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    • 2014
  • The thickness dependent electrical, structural, and optical properties of ZnO films grown by atomic layer deposition (ALD) at various growth temperatures were investigated. In order to deposit ZnO films, diethylzinc and deionized water were used as metal precursor and reactant, respectively. ALD process window was found at the growth temperature range from $150^{\circ}C$ to $250^{\circ}C$ with a growth rate of about $1.7{\AA}/cycle$. The electrical properties were studied by using van der Pauw method with Hall effect measurement. The structural and optical properties of ZnO films were analyzed by using X-ray diffraction, field emission scanning electron microscopy, and UV-visible spectrometry as a function of thickness values of ZnO films, which were selected by the lowest electrical resistivity. Finally, the figure of merit of ZnO films could be estimated as a function of the film thickness. As a result, this investigation of thickness dependent electrical, structural, and optical properties of ZnO films can provide proper information when applying to optoelectronic devices, such as organic light-emitting diodes and solar cells.

Characteristics of Electroplated Ni Thick Film on the PN Junction Semiconductor for Beta-voltaic Battery (베타전지용 PN 접합 반도체 표면에 도금된 Ni 후막의 특성)

  • Kim, Jin Joo;Uhm, Young Rang;Park, Keun Young;Son, Kwang Jae
    • Journal of Radiation Industry
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    • v.8 no.3
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    • pp.141-146
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    • 2014
  • Nickel (Ni) electroplating was implemented by using a metal Ni powder in order to establish a $^{63}Ni$ plating condition on the PN junction semiconductor needed for production of beta-voltaic battery. PN junction semiconductors with a Ni seed layer of 500 and $1000{\AA}$ were coated with Ni at current density from 10 to $50mA\;cm^{-2}$. The surface roughness and average grain size of Ni deposits were investigated by XRD and SEM techniques. The roughness of Ni deposit was increased as the current density was increased, and decreased as the thickness of Ni seed layer was increased. The results showed that the optimum surface shape was obtained at a current density of $10mA\;cm^{-2}$ in seed layer with thickness of $500{\AA}$, $20mA\;cm^{-2}$ of $1000{\AA}$. Also, pure Ni deposit was well coated on a PN junction semiconductor without any oxide forms. Using the line width of (111) in XRD peak, the average grain size of the Ni thick firm was measured. The results showed that the average grain size was increased as the thickness of seed layer was increased.

Unconformity and Stratigraphy of late Quaternary Tidal Deposits, Namyang Bay, West Coast of Korea (한국 서해 남양만 조수 퇴적분지의 제 4기 퇴적층서와 부정합)

  • 박용안;최진용
    • 한국해양학회지
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    • v.30 no.4
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    • pp.332-340
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    • 1995
  • To study stratigraphy of tidal basin deposits, related unconformity and source of late Holocene tidal sediments in Namyang Bay, west coast of Korea, total 8 vibracore sediments have been analyzed. The uppermost stratigraphic sequence of the late Holocene Namyang intertidal deposit overlies three different stratigraphic sequences (1) oxidized reddish brown muddy deposit (Yongduri Member), (2) oxidized yellow deposit (Kanweoldo Formation) and (3) the pre-Cambrian gneiss complex unconformably. Accordingly, three unconformities between those different sequences are recognized. The Namyang tidal deposits (late Holocene) with several meter thickness are mostly coarsening upward sequence suggesting transgressive phase during a continuous rise of sea level. The tidal deposit vibracored down to 4.5 m in depth contains clastic glauconite sands (2% in average) from 2.5 m to the vibracore bottom. These glauconite sands are considered to be transported to the site of Namyang Bay tidal sedimentation from offshore continental shelf of the Yellow Sea along the course of late Holocene sea-level rise.

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Plasma nitriding on chromium electrodeposit

  • Wang Liang;K.S. Nam;Kim, D.;Kim, M.;S.C. Kwon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.29-30
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    • 2001
  • This paper presents some results of plasma nitriding on hard chromium deposit. The substrates were C45 steel and $30~50{\;}\mu\textrm{m}$ of chromium deposit by electroplating was formed. Plasma nitriding was carried out in a plasma nitriding system with $95NH_3{\;}+{\;}SCH_4$ atmosphere at the pressure about 600 Pa and different temperature from $450^{\circ}C{\;}to{\;}720^{\circ}C$ for various time. Optical microscopy and X-ray diffraction were used to evaluate the characteristics of surface nitride layer formed by nitrogen diffusion from plasma atmosphere inward iCr coating and interface carbide layer formed by carbon diffusion from substrate outward Cr coating. The microhardness was measured using microhareness tester at the load of 100 gf. Corrosion resistance was evaluated using the potentiodynamic measurement in 3.5% NaG solution. A saturated calomel electrode (SiCE) was used as the reference electrode. Fig.1 shows the typical microstructures of top surface and cross-section for nitrided and unnitrided samples. Aaer plasma nitriding a sandwich structure was formed consisting of surface nitride layer, center chromium layer and interface carbide layer. The thickness of nitride and carbide layers was increased with the increase of processing temperature and time. Hardness reached about 1000Hv after nitriding while 900Hv for unnitrided hard chromium deposit. X-ray diffraction indicated that surface nitrided layer was a mixture of $Cr_2N$ and CrN at low temperature and erN at high temperature (Fig.2). Anodic polarization curves showed that plasma nitriding can greatly improve the corrosion resistance of chromium e1ectrodeposit. After plasma nitriding, the corrosion potential moved to noble direction and passive current density was lower by 1 to 4 orders of magnitude compared with chromium deposit(Fig.3).

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Effect of Coating Thickness on Rolling Contact Fatigue of CNx Coated Steel (CNx코팅된 강의 회전접촉피로에 미치는 코팅두께의 영향)

  • Choi, Byung Young;Umehara, Noritsugu
    • Journal of the Korean Society for Heat Treatment
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    • v.13 no.5
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    • pp.355-359
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    • 2000
  • Ion beam assisted deposition system was used to deposit CNx coatings with various thickness on the substrates of high-frequency induction hardened steels. Rolling contact fatigue tests were performed using Polymet RCF-1 machine with a constant supply of lubricant. Rolling contact fatigue life was substantially different in the steels with various thickness of CNx coatings. The optimum thickness of CNx coating was found to be $8.9{\mu}m$, showing the longest fatigue life, mainly caused by higher resistance to initiation of cracks and protective overcoat remaining to the surface failure during rolling contact fatigue. Cracks were initiated in the substrates under the surface of wear track and propagated to the surface, which eventually resulted in the failure. The reduction of fatigue life observed in the specimen with elimination of CNx coating during rolling contact fatigue was explained by the substrates deformation.

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Effect of Gelatine on the Electrodeposition of Copper (구리 전착에서 젤라틴의 영향)

  • 장영철;손헌준
    • Journal of the Korean institute of surface engineering
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    • v.26 no.4
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    • pp.163-174
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    • 1993
  • The effect of gelatine on the electrodeposition of copper in cupric sulfate-sulfuric acid solution was investi-gated using an ac impedance technique. In the presence of gelatine, the charge transfer resistance was in-creased and the electrical double layer capacitance was decreased. A model was suggested to explain the im-pedance spectra and it fitted well the experimental data. Also the uniformity of deposit thickness was in-creased while the grain size was decreased by the addition of gelatine.

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