• 제목/요약/키워드: Density of states

검색결과 555건 처리시간 0.028초

SiO2 완충층 두께에 따른 비정질 InGaZnO Pseudo-MOS Field Effect Transistor의 신뢰성 평가 (Effect of SiO2 Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor)

  • 이세원;황영현;조원주
    • 한국전기전자재료학회논문지
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    • 제25권1호
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    • pp.24-28
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    • 2012
  • In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

Optimization and Mathematical Modeling of the Transtubular Bioreactor for the Production of Monoclonal Antibodies from a Hybridoma Cell Line

  • Halberstadt, Craig R.;Palsson, Bernhanrd O.;Midgley, A.Rees;Curl, Rane L.
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제7권3호
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    • pp.163-170
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    • 2002
  • This report describes the use of a transtubular bioreactor to study the relative effects of diffusion versus perfusion of medium on antibody production by a hybridoma cell line. The study was performed with a high-density cell culture maintained in a serum-free, low-protein medium for 77 days. It was determined that the reactor possessed a macro-mixing pattern residence time distribution similar to a continuous stirred tank reactor (CSTR), However, due to the arrangement of the medium lines in the reactor, the flow patterns for nutrient distribution consist of largely independent medium path lengths ranging from short to long. When operated with cyclic, reversing, transtubular medium flow, some regions of the reactor (with short residence times) are more accessible to medium than others (with long residence times). From this standpoint, the reactor can be divided into three regions: a captive volume, which consists of medium primarily delivered via diffusion; a lapped volume, which provides nutrients through unilateral convection; and a swept volume, which operates through bilateral convection. The relative sizes of these three volumes were modified experimentally by changing the period over which the direction of medium flow was reversed from 15 min (larger captive volume) to 9 h (larger swept volume). The results suggest that antibody concentration increases as the size of the diffusion-limited (captive) volume is increased to a maximum at around 30 min with a sharp decrease thereafter. As reflected by changes in measured consumption of glucose and production of lactate, no significant difference in cellular metabolism occurred as the reactor was moved between these different states. These results indicate that the mode of operation of the transtubular bioreactor may influence antibody productivity under serum-free, low-protein conditions with minimal effects on cellular metabolism.

Optimization-based method for structural damage detection with consideration of uncertainties- a comparative study

  • Ghiasi, Ramin;Ghasemi, Mohammad Reza
    • Smart Structures and Systems
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    • 제22권5호
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    • pp.561-574
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    • 2018
  • In this paper, for efficiently reducing the computational cost of the model updating during the optimization process of damage detection, the structural response is evaluated using properly trained surrogate model. Furthermore, in practice uncertainties in the FE model parameters and modelling errors are inevitable. Hence, an efficient approach based on Monte Carlo simulation is proposed to take into account the effect of uncertainties in developing a surrogate model. The probability of damage existence (PDE) is calculated based on the probability density function of the existence of undamaged and damaged states. The current work builds a framework for Probability Based Damage Detection (PBDD) of structures based on the best combination of metaheuristic optimization algorithm and surrogate models. To reach this goal, three popular metamodeling techniques including Cascade Feed Forward Neural Network (CFNN), Least Square Support Vector Machines (LS-SVMs) and Kriging are constructed, trained and tested in order to inspect features and faults of each algorithm. Furthermore, three wellknown optimization algorithms including Ideal Gas Molecular Movement (IGMM), Particle Swarm Optimization (PSO) and Bat Algorithm (BA) are utilized and the comparative results are presented accordingly. Furthermore, efficient schemes are implemented on these algorithms to improve their performance in handling problems with a large number of variables. By considering various indices for measuring the accuracy and computational time of PBDD process, the results indicate that combination of LS-SVM surrogate model by IGMM optimization algorithm have better performance in predicting the of damage compared with other methods.

Spectroscopic Study of the X-ray Dip at Pre-eclipse Phase of Hercules X-1

  • Choi, C.S.;Nagase, F.;Makino, F.;Dotani, T.;Min, K.W.
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 1992년도 한국우주과학회보 제1권1호
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    • pp.21-21
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    • 1992
  • The X-ray binary pulsar Her X-1 was observed with Ginga on 1988 August 28 during the orbital phase of 0.76 to 0.85 at the main-on phase of the 35 day cycle. During the observations the X-ray intensity varied by a factor of five or more on a time scale as short as 30 sec, due mostly to the soft X-ray absorption in the pre-eclipse phase. From the studies of pulse profiles and energy spectra, we revealed that there exists in the dipphase an unpulsed component which is "3% of the intensity at the non-absorbed high-level. We suggest that scattering of the source continuum by the optically thin hot corona is responsible for the unpoised component. In the spectral analysis, we find that the high-state non-absorbed spectra can be fitted by a power-law without absorption, and the spectra observed in the different abgorption states by two components of a power-law with the same photon index. An iron-K emission line is required in to the cases of fitting. The estimated equivalent width of the iron line varies from 0.18 to 0.51 key according to the change in the absorption column density along the line of sight. We suggest that the fluorescent iron line arises in a cool and relatively small region, like the Alfvensur face, and may be partially intercepted by the optically thick gas cloud passing across the line of sight.1 Korea Astronomy Observatorya The Institute of Space and Astronautical Science in Japan3 Korea Advanced Institute of Science and Technology

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Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications

  • Chuan, M.W.;Lau, J.Y.;Wong, K.L.;Hamzah, A.;Alias, N.E.;Lim, C.S.;Tan, M.L.P
    • Advances in nano research
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    • 제10권5호
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    • pp.415-422
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    • 2021
  • Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi3NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi3NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi3NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method

  • M.W. Chuan;S.Z. Lok;A. Hamzah;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P Tan
    • Advances in nano research
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    • 제14권1호
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    • pp.1-15
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    • 2023
  • Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.

In, Cr 동시 도핑에 따른 BiSbTe3 소재의 열전성능지수 증대 (Thermoelectric Properties of In and Cr Co-Doped BiSbTe3)

  • 이창우;김준수;허민수;김상일;김현식
    • 한국재료학회지
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    • 제34권9호
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    • pp.448-455
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    • 2024
  • We conducted a study on excessive doping of the Cr and In elements in Bi-Sb-Te materials satisfying the Hume-Rothery rule, and investigated the resulting electrical and thermal properties. From X-ray diffraction (XRD) results, we confirmed the formation of a single phase even with excessive doping. Through analysis of electrical properties, we observed the highest enhancement in electrical characteristics at y = 0.2, suggesting that the appropriate ratio of Bi-Sb significantly influences this enhancement. Using the Callaway-von Baeyer (CvB) model to assess scattering due to point defects, we calculated the experimental point defect scattering factor (ΓCvB.exp), which was notably high due to the substantial differences in volume and atomic weight between the substituted (Cr, In) and original (Bi, Sb) elements. Additionally, we conducted a single parabolic band (SPB) modeling analysis of materials with compositions y = 0.1 and 0.2, where, despite a decrease in density-of-states effective mass (md*) during the enhancement process from y = 0.1 to 0.2, a sharp increase in non-degenerate mobility (μ0) led to an 88 % increase in weighted mobility (μw). Furthermore, analyzing zT with respect to nH revealed a 51 % increase in zT at a composition of y = 0.2. This study confirmed a significant reduction in lattice thermal conductivity with the co-doping strategy, and with further compositional studies to improve electrical properties, we anticipate achieving high zT.

프라세오뮴계 ZnO 바리스터 세라믹스의 전기적 특성에 디스프로시움 첨가의 영향 (Influence of Addition of Dysprosium on Electrical properties of Praseodymium-based ZnO Varistor Ceramics)

  • 김향숙;남춘우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.625-628
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    • 2002
  • The electrical properties of the praseodymium-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Dy oxides were investigated with $Dy_2O_3$ amount. The average grain size of varistor ceramics was greatly decreased from 18.2 to 4.6 pm with increasing $Dy_2O_3$ amount. The calculated nonlinear exponent$({\alpha})$ in varistor ceramics without $DY_2O_3$ was only 4.9, whereas the a value of the varistors with $DY_2O_3$ was abruptly increased in the range of 48.8 to 58.6. In particular, the maximum value of a was obtained by doping of 1.0 mol% $DY_2O_3$, reaching 58.6. The measured leakage current$(I_l)$ value in varistors without $DY_2O_3$ was $85.45{\mu}A$, whereas the $I_{\ell}$ value of the varistors with $DY_2O_3$ was very abruptly decreased in the range of 1.10 to $0.12{\mu}A$. In particular, the minimum value of $I_{\ell}$ was obtained by doping of 0.5 mol% $DY_2O_3$, reaching $0.12{\mu}A$. The tan $\delta$ varied in V-shape, with minimum 2.28% at 0.5 mol% $DY_2O_3$. The donor concentration and the density of interface states were decreased in the range of $(4.66{\sim}0.25){\times}10^{18}cm^3$ and $(5.70{\sim}1.39){\times}10^{12}/cm^2$, respectively, as $DY_2O_3$ amount is increased.

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Edge perturbation on electronic properties of boron nitride nanoribbons

  • K.L. Wong;K.W. Lai;M.W. Chuan;Y. Wong;A. Hamzah;S. Rusli;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P. Tan
    • Advances in nano research
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    • 제15권5호
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    • pp.385-399
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    • 2023
  • Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

Predicting Land Use Change Affected by Population Growth by Integrating Logistic Regression, Markov Chain and Cellular Automata Models

  • Nguyen, Van Trung;Le, Thi Thu Ha;La, Phu Hien
    • 한국측량학회지
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    • 제35권4호
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    • pp.221-230
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    • 2017
  • Demographic change was considered to be the most major driver of land use change although there were several interacting factors involved, especially in the developing countries. This paper presents an approach to predict the future land use change using a hybrid model. A hybrid model consisting of logistic regression model, Markov chain (MC), and cellular automata (CA) was designed to improve the performance of the standard logistic regression model. Experiment was conducted in Giao Thuy district, Nam Dinh Province, Vietnam. Demography and socio-economic variables dealing with urban sprawl were used to create a probability surface of spatio-temporal states of built-up land use for the years 2009, 2019, and 2029. The predicted land use maps for the years 2019 and 2029 show substantial urban development in the area, much of which are located in areas sensitive to source protections. It also showed that aquacultural land changes substantially in areas where are in the vicinity of estuary or near the sea dike. There was considerable variation between the communes; notably, communes with higher household density and higher proportion of people in working age have larger increases in aquacultural areas. The results of the analysis can provide valuable information for local planners and policy makers, assisting their efforts in constructing alternative sustainable urban development schemes and environmental management strategies.