• Structural Engineering and Mechanics
• /
• v.67 no.3
• /
• pp.277-281
• /
• 2018

The analytical solution of two functionally graded layers with Volterra type screw dislocation is investigated under anti-plane shear impact loading. The energy dissipation of FGM layers is modeled by viscous damping and the properties of the materials are assumed to change exponentially along the thickness of the layers. In this study, the rate of gradual change ofshear moduli, mass density and damping constant are assumed to be same. At first, the stress fields in the interface of the FGM layers are derived by using a single dislocation. Then, by determining a distributed dislocation density on the crack surface and by using the Fourier and Laplace integral transforms, the problem are reduce to a system ofsingular integral equations with simple Cauchy kernel. The dynamic stress intensity factors are determined by numerical Laplace inversion and the distributed dislocation technique. Finally, various examples are provided to investigate the effects of the geometrical parameters, material properties, viscous damping and cracks configuration on the dynamic fracture behavior of the interacting cracks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.4
• /
• pp.329-334
• /
• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• Smart Structures and Systems
• /
• v.10 no.6
• /
• pp.517-546
• /
• 2012

In this paper, vibration-based methods to monitor damage in foundation-structure interface of harbor caisson structure are presented. The following approaches are implemented to achieve the objective. Firstly, vibration-based damage monitoring methods utilizing a variety of vibration features are selected for harbor caisson structure. Autoregressive (AR) model for time-series analysis and power spectral density (PSD) for frequency-domain analysis are selected to detect the change in the caisson structure. Also, the changes in modal parameters such as natural frequency and mode shape are examined for damage monitoring in the structure. Secondly, the feasibility of damage monitoring methods is experimentally examined on an un-submerged lab-scaled mono-caisson. Finally, numerical analysis of un-submerged mono-caisson, submerged mono-caisson and un-submerged interlocked multiple-caissons are carried out to examine the effect of boundary-dependent parameters on the damage monitoring of harbor caisson structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.47-50
• /
• 2000

This paper investigated structural and electrical properties of $Y_2$ $O_3$ as a buffer layer of single transistor FRAM (ferroelectric RAM). $Y_2$ $O_3$ buffer layers were deposited at a low substrate temperature below 40$0^{\circ}C$ and then RTA (rapid thermal anneal) treated. Investigated parameters are substrate temperature, $O_2$ partial pressure, post-annealing temperature, and suppression of interfacial $SiO_2$ layer generation. For a well-fabricated sample, we achieved that leakage current density ( $J_{leak}$) in the order of 10$^{-7}$ A/$\textrm{cm}^2$, breakdown electric field ( $E_{br}$ ) about 2 MV/cm for $Y_2$ $O_3$ film. Capacitance versus voltage analysis illustrated dielectric constants of 7.47. We successfully achieved an interface state density of $Y_2$ $O_3$/Si as low as 8.72x1010 c $m^{-2}$ e $V^{-1}$ . The low interface states were obtained from very low lattice mismatch less than 1.75%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.693-696
• /
• 2011

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

• Journal of the Korean Electrochemical Society
• /
• v.6 no.3
• /
• pp.174-177
• /
• 2003

Electric double-layer capacitors based on charge storage at the interface between a high surface area activated carbon electrode and an electrolyte solution are characterized by their long cycle-life and high power density in comparison with batteries. However, energy density of electric double-layer capacitors obtained at present is about 6 Wh/kg at a power density of 500W/kg which is smaller as compared with that of batteries and limits the wide spread use of the capacitors. Therefore, a new capacitor that shows larger energy density than that of electric double-layer capacitors is proposed. The new capacitor is the hybrid capacitor consisting of activated carbon cathode, carbonaceous anode and an organic electrolyte. Maximum voltage applicable to the cell is over 4.2V that is larger than that of the electric double-layer capacitor. As a result, discharged energy density on the basis of stacked volume of electrode, current collector and separator is more than 18Wh/l at a power density of 500W/l.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.5
• /
• pp.226-231
• /
• 2008

Titanium and its alloy have been widely used in dental implant and orthopedic prostheses. Electrochemical characteristics of dental implant in the various simulated body fluids have been researched by using electrochemical methods. Ti-6Al-4V alloy implant was used for corrosion test in 0.9% NaCl, artificial saliva and simulated body fluids. The surface morphology was observed using scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDX). The electrochemical stability was investigated using potentiosat (EG&G Co, 263A). The corrosion surface was observed using scanning electron microscopy (SEM). From the results of potentiodynamic test in various solution, the current density of implant tested in SBF and AS solution was lower than that of implant tested in 0.9% NaCl solution. From the results of passive film stability test, the variation of current density at constant 250 mV showed the consistent with time in the case of implant tested in SBF and AS solution, whereas, the current density at constant 250mV in the case of implant tested in 0.9% NaCl solution showed higher compared to SBF and AS solution as time increased. From the results of cyclic potentiodynamic test, the pitting potential and |$E_{pit}\;-\;E_{corr}$| of implant tested in SBF and AS solution were higher than those of implant tested in 0.9% NaCl solution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.53-53
• /
• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.16-21
• /
• 2015

In this study, the effects of forming gas post metallization annealing (PMA) on recessed AlGaN/GaN-on-Si MOSHFET were investigated. The device employed an ICPCVD $SiO_2$ film as a gate oxide layer on which a Ni/Au gate was evaporated. The PMA process was carried out at $350^{\circ}C$ in forming gas ambient. It was found that the device instability was improved with significant reduction in interface trap density by forming gas PMA.

• Journal of Ocean Engineering and Technology
• /
• v.10 no.3
• /
• pp.50-61
• /
• 1996

The breaking phenomenon of regular periodic waves generated by a numerical wave maker is simulated by finite-difference method which can cope with strong interface motions. The air and water flows are simultaneously solved in the time-marching solution procedure for the Navier-Stokes equation. A density-function technique is devised for the implemenation of the interface conditions. The accuracy is examined and applied to the simulation of two-dimensional breaking phenomena of periodic gravity waves.