• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.357-357
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• 2010

Using ab initio density functional theory, we study the structural and electronic properties of interface between Cu surface and highly electron withdrawing hexaazatriphenylene-hexanitrile (HAT-CN) known as an efficient hole injection layer for organic light emitting diodes (OLEDs). We calculate the equilibrium geometries of the interface with different HAT-CN coverages. Usually, some of C-N bonds located at the edge of the HAT-CN molecule are deformed toward Cu atoms resulting in the reconstruction of Cu surface. By analyzing the electron charge and the potential distributions over the interface, we observe the formation of surface dipoles, which modify the work function at the interface. Such dipole formation is attributed to two origins, one of which is a geometrical nature and the other is a bond dipole. The former is related to structural deformation mentioned above, whereas the latter is due to charge transfer between organic and metal surface.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.93-99
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• 2011

We investigated how the surface roughness of electrode affects the charge injection at the pentacene/Au interface. After depositing Au film on the Si substrate by sputtering, we annealed the sample to control the Au surface roughness. Pentacene and Au top electrode were subsequently deposited to complete the sample. The nucleation density of pentacene was slightly higher on the rougher Au electrode, but surface morphologies of thick pentacene films were similar on both the as-prepared and the roughened Au electrodes. The current-voltage curves obtained from the Au/pentacene/Au structure measured as a function of temperature indicated that the interface barrier was higher for the rougher Au bottom-electrode. We propose that the higher barrier was caused by the lower work function of rougher electrode surface and the higher trap density at the interface.

• Journal of the Korean institute of surface engineering
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• v.39 no.4
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• pp.190-197
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• 2006

The effects of blasting and acidic treatment on the corrosion characteristics of dental implant fabricated with Cp-Ti and Ti-6Al-4V alloy have been researched by using electrochemical methods. The fabricated implants were cleaned and sandblasted by $Al_2O_3$ powder and then acidic treatment was carried out in nitric acid solution. The surface morphology were observed using scanning electron microscope. The corrosion behaviors were investigated using potentiosat and EIS in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The potentio-dynamic test in 0.9% NaCl indicated that the corrosion potential of blasting and acidic treated implant was lower than that of non treated implant, but current density was higher than that of non treated implant. From the cyclic potentiodynamic test results of Ti implant, the passivation current density of blasting and acidic treated implant slightly higher than that of non treated implant. From A.C. impedance test results in 0.9% NaCl solution, polarization resistance($R_p$) value of blasting and acidic treated implant was lower than that of non treated implant. In case of blasting and acidic treated implant surface, the pits were observed in valley and crest of implant surface.

• Journal of Adhesion and Interface
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• v.3 no.2
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• pp.30-39
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• 2002

The effect of cure accelerator content on the change in crosslink density by thermal aging was studied for silica-filled natural rubber (NR) vulcanizates. Influence of silane coupling agent was also investigated. N-tert-Butyl-2-benzothiazole sulfenamide (TBBS) and bis-(3-(triethoxysilyl)-propyl)-tetrasulfide (TESPT) were used as a cure accelerator and a silane coupling agent, respectively. The crosslink density increased by thermal aging and the increasing level became larger as the aging temperature increased. The degree of crosslink density change of the vulcanizates without the silane coupling agent was larger than that of the vulcanizates containing the silane coupling agent. For the vulcanizates silane coupling agent, the activation energy for the crosslink density change decreased with increase of the cure accelerator content in the vulvanizate.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.309-309
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• 2011

There have been large research activities on the high quality oxide films for the realization oxide based electronics. However, the interface interdiffusion prohibits achieving high quality oxide films, when the oxide films are grown on non-oxide substrates. In the case of Si substrates, there exist lattice mismatch and interface interdiffusion when oxide films deposited on direct Si surface. In this presentation, we report the interface characteristics of yttria-stabilized zirconia films grown on silicon substrates. From x-ray reflectivity analysis we found that the film thickness and interface roughness decreased as the growth temperature increased, indicating that the growth mechanism varies and the chemical reaction is limited to the interface as the growth condition varies. Furthermore, the packing density of the film increased as the growth temperature increased and the film thickness decreased. X-ray photoelectron spectroscopy analysis of very thin films revealed that the amount of chemical shift increased as the growth temperature increased. Intriguingly, the direction of the chemical shift of Zr was opposite to that of Si due to the second nearest neighbor interaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Electrical & Electronic Materials
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• v.9 no.6
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.107-108
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• 2008

We calculated orthorhombic-NiSi (010)/Si superstructure. Orthorhombic-NiSi was changed to tetragonal structure to be matched with Si substrate. Eight models were produced by the type of Si substrate. In the case of orthorhombic-NiSi (010)/Si (020)[00-1], it was the most favorable energetically and the shortest of the distance between two superstructures. However, in the case of orthorhombic-NiSi (010)/Si (010)[00-1], it was the most unfavorable energetically and the longest of the distance. The energy and distance of orthorhombic-NiSi (010)/Si superstructure were changed by the coordination number of Ni atom and the bond length of atom-atom at the interface.

• Journal of computational fluids engineering
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• v.17 no.1
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• pp.8-15
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• 2012

A code developed using the flux-difference splitting scheme on the hybrid Cartesian/immersed boundary method is applied to simulate three-dimensional internal waves. The material interface is regarded as a moving contact discontinuity and is captured on the basis of mass conservation without any additional treatment across the interface. Inviscid fluxes are estimated using the flux-difference splitting scheme for incompressible fluids of different density. The hybrid Cartesian/immersed boundary method is used to enforce the boundary condition for a moving three-dimensional body. Immersed boundary nodes are identified within an instantaneous fluid domain on the basis of edges crossing a boundary. The dependent variables are reconstructed at the immersed boundary nodes along local normal lines to provide the boundary condition for a discretized flow problem. The internal waves are simulated, which are generated by an pitching ellipsoid near an material interface. The effects of density ratio and location of the ellipsoid on internal waves are compared.