• Corrosion Science and Technology
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• v.9 no.6
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• pp.281-288
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• 2010

This study examined the carbon corrosion at Pt/C interface in proton exchange membrane fuel cell environment. The Pt nano particles were electrodeposited on carbon substrate, and then the corrosion behavior of the carbon electrode was examined. The carbon electrodes with Pt nano electrodeposits exhibited the higher oxidation rate and lower oxidation overpotential compared with that of the electrode without Pt. This phenomenon was more active at $75^{\circ}C$ than $25^{\circ}C$. In addition, the current transients and the corresponding power spectral density (PSD) of the carbon electrodes with Pt nano electrodeposits were much higher than those of the electrode without Pt. The carbon corrosion at Pt/C interface was highly accelerated by Pt nano electrodeposits. Furthermore, the polarization and power density curves of PEMFC showed degradation in the performance due to a deterioration of cathode catalyst material and Pt dissolution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.462-466
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• 2004

The bi-materials composed of $Al-5wt{\%}Mg$ and its composite reinforced with SiC particles were prepared by ball-milling and subsequent sintering process. The size of powder in Al-Mg/SiCp mixture decreased with increasing ball-milling time, it was saturated above 30 h when the ball and powder was in the ratio of 30 to 1. Both $Al-5wt{\%}Mg$ powders mixture and $Al-5wt{\%}Mg/SiCp$ mixture were compacted under a pressure of 350MPa and were bonded by sintering at temperatures ranging from 873K to 1173K for 1-5h. At 873k, the sound bi-mate-rials could not be obtained. In contrast, the bi-materials with the macroscopically well-bonded interface were obtained at higher temperatures than 873K. The length of well-bonded interface became longer with increasing temperature and time, indicating the improved contact in the interface between unreinforced Al-Mg part and Al-Mg/SiCp composite part. The relative density in the bi-materials increased as the sintering temperature and time increased, and the bi-materials sintered at 1173K for 5h showed the highest density.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.10
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• pp.783-788
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• 2009

In this paper, we have performed a parametric study on the characteristics of multiphase laminar flow with density difference in various microchannels. The interface between multiphase fluids is rotated by the gravitational forces induced by density difference. The numerical simulations were carried out via commercial CFD package to study the characteristics of multiphase laminar flow. The results of the numerical simulations in this study were verified by comparing with the previously reported experimental results in the literature. We have also proposed a new dimensionless relationship between dimensionless rotation angle of interface and dimensionless parameters are proposed for square microchannels with various aspect ratios. The dimensionless relationship could be widely applied to the reliable design of various microfluidic devices dealing with multiphase laminar flow.

• Journal of Powder Materials
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• v.20 no.1
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• pp.1-6
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• 2013

The key concept of nanopowder agglomerate sintering (NAS) is to enhance material transport by controlling the powder interface volume of nanopowder agglomerates. Using this concept, we developed a new approach to full density processing for the fabrication of pure iron nanomaterial using Fe nanopowder agglomerates from oxide powders. Full density processing of pure iron nanopowders was introduced in which the powder interface volume is manipulated in order to control the densification process and its corresponding microstructures. The full density sintering behavior of Fe nanopowders optimally size-controlled by wet-milling treatment was discussed in terms of densification process and microstructures.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.933-940
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• 1993

SO42-/Al2O3 powder was prepared by the coprecipitation method from the Al(NO3)3.9H2O and NH4OH and followed by being treated with various concentrations of sulfuric acid. The characterization of these powders was performed with XRD, BET and FT-IR. The surface charge density at alumina/KCl(aq) interface was measured by potentiometric titration method. From the experimental data it was shown that acid strength, specfic surface area, and structure of surface treated alumina were independent on the amount of exchanged SO42-. However, the acid amounts of alumina were increased with the amounts of SO42- formed on alumina surface. The relation between the acid amount of SO42- ion exchanged alumina surface and the surface charge density for SO42-/Al2O3/KCl(aq) interface was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.17-19
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• 2004

The electrical properties of gate oxides grown in two different processes, which are in 10% nitrous oxide($N_2O$) and in dry oxygen, have been experimentally investigated and compared. It has been observed that the $SiC-SiO_2$ interface-trap density(Dit) measured in nitrided gate oxide has been tremendously reduced, compared to the density obtained from gate oxide grown in dry oxygen. The beneficial effects of nitridation on gate oxides also have been demonstrated in the values of total near interface-trap density and of forward-bias breakdown field. The reasons of these improvements have been explained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.128-131
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• 1992

In this paper, the skewness properties of partial discharge at interface layer in mica-epoxy composite material were investigated and studied on interface specimens which has internal electrodes. As a result, it has been confirmed that the interface exists as abnormal resin layer and the contact condition at the interface is depended upon the density of si lane aqueous solution. The Pulse frequency of discharge at abnormal interface has been shown a linear increasing with enlargement of discharge quantity according to rising of the applied voltage. Whereas, in case of normal interface, pulse frequency represented exponential increasing at the saturating point of discharge quantity. The aging model can be represented from the variable characteristics of skewness.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.30-36
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• 2003