• Title/Summary/Keyword: Density interface

Search Result 964, Processing Time 0.038 seconds

NUMERICAL STUDY ON TWO-DIMENSIONAL MULTIPHASE FLOWS DUE TO DENSITY DIFFERENCE WITH INTERFACE CAPTURING METHOD (경계면 포착법을 사용한 밀도차에 따른 다상유동에 관한 수치해석적 연구)

  • Myong, H.K.
    • 한국전산유체공학회:학술대회논문집
    • /
    • 2007.10a
    • /
    • pp.214-219
    • /
    • 2007
  • Both the bubble rising in a fully filled container and the droplet splash are simulated by a solution code(PowerCFD). This code employs an unstructured cell-centered method based on a conservative pressure-based finite-volume method with interface capturing method (CICSAM) in a volume of fluid(VOF) scheme for phase interface capturing. The present results are compared with other numerical solutions found in the literature. It is found that the present code simulate complex free surface flows such as multi phase flows due to large density difference efficiently and accurately.

  • PDF

Effect of Post-Metallization Anneal (PMA) on Interface Trap Density of Si-$SiO_2$ (금속후 어닐링 방법이 Si-$SiO_2$ 계면 전하 농도에 미치는 영향)

  • Jung, Jong-Wan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.157-158
    • /
    • 2007
  • Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

  • PDF

An Extension Behavior of an Interface Kinked Crack by CED (CED에 의한 계면굴절균열의 진전거동)

  • 권오헌
    • Journal of the Korean Society of Safety
    • /
    • v.11 no.2
    • /
    • pp.9-15
    • /
    • 1996
  • The characteristics on the extension of the CED(Crack energy density) concept to the interface kinked crack problems in a dissimilar material are examined. Each mode contributions of CED are found by symmetric and antisymmetric components and domain independent integrals. Finite element calculation is carried out to simulate the Interface kinked crack growth on bimaterial. The focus is the establishment of fracture criterion with CED and finding the orientation of crack extension. From the results, a prediction about the extension behavior of an interface kinked crack can be done. And we show that CED can be a parameter to indicate fracture criterion at an Interface kinked crack.

  • PDF

Prediction of Pullout Behavior Characteristics on the Geogrid (지오그리드 보강재의 인발거동특성 예측기법)

  • 김홍택;박사원;김경모
    • Proceedings of the Korean Geotechical Society Conference
    • /
    • 1999.11c
    • /
    • pp.1-10
    • /
    • 1999
  • In the present study, laboratory pull-out tests with various geogrid shapes are carried out to investigate behavior characteristics of the geogrid. Also, an interface pullout formula is proposed for predicting and interpreting pullout test result. The analytical model is based on the assumption that the reinforcement is linear elastic during the pullout test. And then, maximum pullout force, frictional resistance and active length for each of the grid density ratio are predicted based on the interface pullout formula. The predicted results were compared with those of pullout tests, and showed in general good agreements.

  • PDF

A Study on Electrical Properties and Structure Analysis of Epoxy-Ceramic Composite Materials (에폭시-세라믹 복합재료의 전기적 특성 및 구조분석)

  • 정지원;홍경진;김태성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1994.05a
    • /
    • pp.9-12
    • /
    • 1994
  • Epoxy-Ceramic Composite have good insulating, therma1 and mechanical properties, so it is studied actively on this material. In this thesis, we made a composite material b)\ulcorner filling Epoxy Resin with ceramics treated with Sillane Coupling Agent and studied dielectric and insulating characteristics according to treatment density of Sillane Coupling Agent and weight percent of filler. As a result, loss tangent increase and electrical breakdown voltage decrease according to increasing treatment density of sillane coupling agent because Interface matching between matrix and filler is not good. The best treatment density of sillane coupling agent is 0.5% water solution, in this density the best interface matching is achieved so good dielectric and insulation characteristics are shown. Dielectric and insulation characteristics according to weight percent of filler are best at 25wt.

  • PDF

A HIGH-ORDER MODEL FOR SPIKE AND BUBBLE IN IMPULSIVELY ACCELERATED INTERFACE

  • Sohn, Sung-Ik
    • Korean Journal of Mathematics
    • /
    • v.20 no.3
    • /
    • pp.323-331
    • /
    • 2012
  • We present a high-order potential ow model for the motion of the impulsively accelerated unstable interface of infinite density jump. The Layzer model for the evolution of the interface is extended to high-order. The time-evolution solutions of the bubble and the spike in the interface are obtained from the high-order model. We show that the high-order model gives improvement on the prediction of the evolution of the bubble and the spike.

Numerical Simulation of Free Surface Flows Using the Roe's Flux-difference Splitting Scheme (Roe의 Flux-difference Splitting 기법을 이용한 자유표면 유동 모사)

  • Shin, Sang-Mook;Kim, In-Chul;Kim, Yong-Jig
    • Journal of the Society of Naval Architects of Korea
    • /
    • v.47 no.1
    • /
    • pp.11-19
    • /
    • 2010
  • A code is developed to simulate incompressible free surface flows using the Roe's flux-difference splitting scheme. An interface of two fluids is considered as a moving contact discontinuity. The continuities of pressure and normal velocity across the interface are enforced by the conservation law in the integral sense. The fluxes are computed using the Roe's flux-difference splitting scheme for two incompressible fluids. The interface can be identified based on the computed density distribution. However, no additional treatment is required along the interface during the whole computations. Complicated time evolution of the interface including topological change can be captured without any difficulties. The developed code is applied to simulate the Rayleigh-Taylor instability of two incompressible fluids in the density ratio of 7.2:1 and the broken dam problem of water-air. The present results are compared with other available results and good agreements are achieved for the both cases.

A Study on Partial Discharge Propeties of Interface Layer in-Mica-Epoxy Composite Material (마이카-에폭시 복합절연계 계면층의 부분방전 특성에 관한 연구)

  • 이은학;김태성;박종건;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1991.10a
    • /
    • pp.83-89
    • /
    • 1991
  • The partial discharge properties of interface layer in Mica-Epoxy composite, which has been mainly used for the coil insulating material of high voltage machinery, are different from those of resins due to the abnormal interface layer to be presented between inorganic material and resin. Accordingly, the study on discharge of interface in composite insulting system is strongly requsted for not only an increasing of insulating strength, but also the basical information of diagnosis system for high voltage equipment. As a result, it has been confirmed that the interface is an abnormal resin layer and the contact states at interface is depended upon the density of silane aqueous solution. Pulse frequency at abnormal interface shows a linear increasing with enlargement of discharge quantity. Whereas, in case of normal interface, pulse frequency property represents exponential increasing at the point of saturating. A life model can be diagramed from results of time dependance of skewness, and a survival life time can be quantified from the life model suggested.

Annealing Effects on Ultra thin MOS Capacitors

  • Ng, Alvin Chi-hai;Xu, Jun;Xu, J.B.;Cheung, W.Y.
    • Electrical & Electronic Materials
    • /
    • v.16 no.9
    • /
    • pp.62.1-62
    • /
    • 2003
  • Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

  • PDF

A Study of the Characteristics of Degradation in Nonvolatile MNOS Memory Devices (비휘발성 MNOS반도체 기억소자의 열화특성에 관한 연구)

  • 이상배;서원철;김병철;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1988.10a
    • /
    • pp.14-17
    • /
    • 1988
  • Degradation effects observed in nonvolatile MNOS memory devices with in increasing W/E (Write/Erase) cycling were investigated using n-type MNOS capacitors. The results showed that the density of Si-SiO$_2$ interface states and the conductivity of nitride were increased with W/E cycles, therefore the memory retention characteristics of the MNOS memory devices were degraded. Also, annealing of the degraded devices restored the original Si-SiO$_2$ interface states density, but failed to restore the original nitride conductivity. Based on these experimental results, we found that the degradation of memory retention characteristic was affected by the nitride conductivity rather than by Si-SiO$_2$ interface states.

  • PDF