• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.2
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• pp.139-144
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• 2011

This paper presents a boundary element application to determine the optimal impressed current densities at defect position on the pipe line. In this protection paint, enough current must be impressed to lower the potential distribution on the metal surface to the critical values. The optimal impressed current densities are determined in order to minimize the power supply for protection. This inverse problem was formulated by employing the boundary element method. Since the system of linear equations obtained was ill-conditioned, including singular value decomposition, conjugate gradient method were applied and the accuracies of these estimation. Several numerical examples are presented to demonstrate the practical applicability of the proposed method.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.35 no.4
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• pp.1-9
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• 2012

Decisions on reliability screening rules and burn-in policies are determined based on the estimated reliability. The variability in a semiconductor manufacturing process does not only causes quality problems but it also makes reliability estimation more complicated. This study investigates the nonuniformity characteristics of integrated circuit reliability according to defect density distribution within a wafer and between wafers then develops optimal burn-in policy based on the estimated reliability. New reliability estimation model based on yield information is developed using a spatial stochastic process. Spatial defect density variation is reflected in the reliability estimation, and the defect densities of each die location are considered as input variables of the burn-in optimization. Reliability screening and optimal burn-in policy subject to the burn-in cost minimization is examined, and numerical experiments are conducted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.128-132
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• 2010

Photonic crystal is dielectric materials or a set of different dielectric materials with periodic structure. Line defect is obtained by leaving out a row of rods along the $\Gamma$-X direction. We showed the change of group velocity in waveguide mode and found resultant small group velocity. Characteristics of the small group velocity were described by electric field distribution. Investigating the phase shift, it is confirmed if small group velocity is positive or negative.

• Journal of Institute of Convergence Technology
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• v.3 no.2
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• pp.17-21
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• 2013

Hot cross wedge rolling process as an incremental forming has many advantages such as the material usage, the short process time, the automatic equipment line and the low forming load. However, it occurs some defects such as the surface groove, the axis warping and the Mannesmann hole. In this paper, the defect of the Mannesmann hole was carried out. Finite element analysis was utilized to reveal the stress distribution, the rotation of the specimen and the change of section profile. Cross wedge rolling experiment was also conducted on the generation of the Mannesmann hole. It was demonstrated according to the spreading angle with respect to the various types of material. In the view point of metal flow, the smaller forming angle and the larger spreading angle increase opportunities of the defect hole generations.

• Bulletin of the Korean Chemical Society
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• v.16 no.10
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• pp.957-968
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• 1995

Generalized Multichannel Quantum Defect theory (MQDT) was implemented to the vibrational predissociation of triatomic van der Waals molecules in the previous paper [Bull. Korean Chem. Soc, 12, 228 (1991)]. Implementation was limited to the calculation of the scattering matrix. It is now extended to the calculation of the predissociation spectra and the final rotational distribution of the photofragment. The comparison of the results with those obtained by other methods, such as Golden-rule type calculation, infinite order sudden approximation (IOS), and close-coupling method, shows that the implementation is successful despite the fact that transition dipole moments show more energy dependence than other quantum defect parameters. Examination of the short-range channel basis functions shows that they resemble angle-like functions and provide the validity of the IOS approximation. Besides the validity of the latter, only a few angles are found to play the major role in photodissociation. In addition to the implementation of MQDT, more progress in MQDT itself is made and reported here.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.8
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• pp.1191-1200
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• 2002

The measurements of velocity vectors are made in the near wake(X/d=5.0) of a circular cylinder with serrated fins. Velocity of fluid which flow through fins decreases as increasing fin height and freestream velocity and decreasing fin pitch. Therefore the velocity distribution at X/d=0.0 has lower gradient with increasing freestream velocity and fin height and decreasing fin pitch. The discontinuity of the streamwise velocity gradient is observed near the fin edge and causes significant changes in V-component velocity distribution in the near wake. This change attributes to the differences in Strouhal number and entraintment flow behavior. Increased turbulent intensity around a circular cylinder due to the serrated fins and entrainment flow are important factors for the recovery of velocity defect. The widths of velocity and turbulent intensity distribution of fin tubes are wider than those of a circular cylinder. The normalized velocity and turbulent intensity distributions with a hydraulic diameter which is proposed in this paper are in closer agreement with those of a circular cylinder.

• Journal of Chest Surgery
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• v.17 no.4
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• pp.729-734
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• 1984

Bochdalek hernia is a type of congenital diaphragmatic defect in the posterolateral portion of the diaphragm. The defect is usually Lt. sided due to protective effect of liver on right. Sex distribution is male preponderance [2:1] and it is diagnosed during neonate, mostly first 24 hours, due to severe respiratory distress. We experienced a rare case of old aged female patient with congenital Bochdalek hernia on Rt. side which was found incidentally during treatment of spontaneous pneumothorax of Rt. side. 17 year old female patient was admitted to CS department for chest discomfort on right and mild dyspnea with duration of 20 days. Under the diagnosis of spontaneous pneumothorax, Rt. closed thoracostomy and underwater sealed drainage with continuous suction was applied. On follow-up chest x-ray, poorly defined hazy increased density with multiple air-fluid levels in Rt. lower lung field and Lt. subphrenic free air were noted. So, Barium enema was done under the impression of Rt. diaphragmatic hernia, and nearly entire colon proximal to sigmoid was demonstrated in the Rt. hemithorax. Operation was done-for surgical repair of defected diaphragm through Rt. posterolateral thoracotomy. Operative findings were as follows; 1.Hypoplastic Rt. lung, esp. RML & RLL. 2.Nearly entirely intestines were herniated. 3.Diaphragmatic defect was located on posterolateral portion of the diaphragm, about 10x3cm in size with blunt smooth margin. 4.A large bleb on apex of RUL of lung. Herniated intestines were repaired into abdominal cavity manually and defect of diaphragm was repaired with No. I black silk interrupted sutures directly, and bleb was resected. Postoperative courses were uneventful and the patient was discharged with good condition on POD 14th.

• Industrial Engineering and Management Systems
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• v.4 no.2
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• pp.158-164
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• 2005

Kusukawa and Ohta presented the $CS_{CQ-r}$ chart to monitor the process defect $rate{\lambda}$ in high-yield processes that is derived from the count of defects. The $CS_{CQ-r}$ chart is more sensitive to $monitor{\lambda}$ than the CQ (Cumulative Quantity) chart proposed by Chan et al.. As a more superior chart in high-yield processes, we propose a Synthetic chart that is the integration of the CQ_-r chart and the $CS_{CQ-r}$chart. The quality characteristic of both charts is the number of units y required to observe r $({\geq}2)$ defects. It is assumed that this quantity is an Erlang random variable from the property that the quality characteristic of the CQ chart follows the exponential distribution. In use of the proposed Synthetic chart, the process is initially judged as either in-control or out-of-control by using the $CS_{CQ-r}$chart. If the process was not judged as in-control by the $CS_{CQ-r}$chart, the process is successively judged by using the $CQ_{-r}$chart to confirm the judgment of the $CS_{CQ-r}$chart. Through comparisons of ARL (Average Run Length), the proposed Synthetic chart is more superior to monitor the process defect rate in high-yield processes to the stand-alone $CS_{CQ-r}$ chart.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.32-44
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• 1997

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.69-78
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• 2004

In this paper, we estimated the exact software defect density to build up a suitable model that is closely related to the size of module in the probability model proposed by MD (Malaiya and Denton). To put it concretely, we predict that the software defect density using some practical data sets that are the outcomes from the system test performed our three projects for the types of distribution (exponential and geometric), per a unit of module, and the size of source line that have been recommended by KLOC(kilo-line-of-code). Then, we make comparison between our proposed defect density model and those examined real data.