• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.23-26
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• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.169-169
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• 2010

박막형 CIGS 태양전지의 배면전극으로 사용되는 Mo 박막은 낮은 저항으로 인한 전기전도성과 열적 안전성이 아주 우수하다. 연구에서는 연성 CIGS 태양전지의 제조를 위한 Mo 배면전극의 대면적 증착기술에 관한 것으로 DC Magnetron Sputtering 공정을 이용하여 전주기술을 통한 Ni-Fe계 연성기판재 위에 졸걸법으로 합성된 $SiO_2$ 절연박막에 Mo 박막을 증착하는 것을 목적으로 하고 있다. 실험에서는 연성기판재 대신 시편을 Sodalime glass, Si wafer, SUS계 소재를 사용하여 스퍼터링 공정에 의한 Mo 박막을 증착하였다. 실험에서 타겟에 인가되는 전력과 공정압력을 변수로 하여 Mo 박막의 증착율, 전기저항성을 측정하였다. 타겟의 크기는 $80mm{\times}350mm$, 타겟과 기판간 거리 20cm 이었으며, 공정 압력은 2~50 mtorr 영역에서 인가전력을 0.5-1.5kW로 하였다. Mo 박막의 증착율과 전기적 특성을 측정하기 위하여 $\alpha$-step과 4-point probe(CMT-SR 1000N)를 이용하였다. 그리고 Mo 박막의 잔류응력을 측정하기 위하여 잔류응력측정기를 이용하였다. Mo 박막의 미세구조분석을 위하여 SEM 및 XRD를 분석을 실시하였다. 배면전극으로서 전기저항성은 공정압력에 따라 좌우 되었으며, 2 mTorr 공정압력과 1.5kW의 전력에서 최소값인 $8.2\;{\mu}{\Omega}-cm$의 저항값과 증착율 약 $6\;{\mu}/h$를 보였다. 기판재와의 밀착성과 관련한 잔류응력 측정과 XRD분석을 통한 결정립 크기를 분석하여 공정압력에 따른 Mo 박막의 잔류응력과 전기 저항 및 결정립 크기의 상관관계를 조사하였다. 그리고 대면적 CIGS 증착공정을 위해 직각형 타겟을 통해 증착된 Mo 박막의 증착분포를 20cm 이내 조사하였다.

• Journal of Surface Science and Engineering
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• v.27 no.5
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• pp.261-272
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• 1994

Both Cu-Cr and Cu-Ti alloy films with different composition were prepared by dc magnetron sputtering onto polyimide substrate and their adhesion and microstructure were observed. In addition, the effect of heat treatment at $400^{\circ}C$ for 2 hours on the variation of adhesion properties and on the changess of microstructure were investigated. Cu-Cr alloy films have crystalline structure of either for or bcc phase depending on the composition of the film. However, the Cu-Ti alloy film forms fcc phase at low Ti concentration while it forms an amorphous phase as the Ti concentration in the films is increased to more than 25at.%. TEM analysis reveal that the microstructure of Cu-Cr and Cu-Ti films forms an open structure with vacant spaces. The adhesion between Cu-Cr, Cu-Ti alloy films and polyimide substrate is relatively good before the heat treatment, but is noticeably reduced after the heat treatment. In particular, the adhesion strength is significantly reduced in the Cu-Ti alloy films after the heat treatment. The reduction of adhesion strength after the heat treatment is identified to relate with the formation of oxide phases at the metal/polyimide interface by AES(Auger Electron Spectroscopy).

• Journal of Surface Science and Engineering
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• v.27 no.5
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• pp.253-260
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• 1994

Ta-N films were reactively sputter deposited by dc magnetron sputtering from a Ta target with a various Ar-N, gas ratio. Electrical resistivity of pure Ta film was 150$\mu$$\Omega$cm and decreased initially with nitrogen addition, and then increased to a value of 220$\mu$$\Omega$-cm~260$\mu$$\Omega$-cm at 9%~23% nitrogen partial flow. Rutherford backscattering spectrometry(RBS) and Auger electron spectroscopy (AES) analysis show that nitrogen content in the film is increased with the nitrogen partial flow. The film contains 58at.% nitrogen at 36% nitrogen partial flow. Both the phase and the microstructure of the as-deposisted films were investigated by x-ray diffractometry(XRD) adn transmission electron microscopy (TEM) at various nitrogen content. The phase of pure Ta film is identified as $\beta$-Ta with a 200$\AA$~300$\AA$ grain size. The phase of Ta film is changed to bcc-Ta as small amount of nitrogen is added. Crystalline Ta2N film was deposited at 24at.% nitrogen content. Amorphous phase is formed over a range of nitrogen content from about 33at.% to 35at.% while crystalline fcc-TaN is observed to form at 39at.%~48at.% nitrogen content.

• Journal of Surface Science and Engineering
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• v.32 no.1
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• pp.3-9
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• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.

• Journal of Surface Science and Engineering
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• v.48 no.5
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• pp.205-210
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• 2015

NbN coatings were prepared by ICP (inductively coupled plasma) assisted magnetron sputtering from a Nb metal target in $Ar+N_2$ atmosphere at various ICP powers. Effect of ICP on the microstructure, crystalline structure and mechanical properties of NbN coatings was investigated by field emission electron microscopy, X-ray diffraction, atomic force microscopy and nanoindentation measurements. The results show that ICP power has a significant influence on coating microstructure, structure and mechanical properties of NbN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Crystalline structure of NbN coatings were changed from cubic ${\delta}$-NbN to hexagonal ${\beta}-Nb_2N$ with increase of ICP power. The maximum nano hardness of 25.4 GPa with Ra roughness of 0.5 nm was obtained from the NbN coating sputtered at ICP power of 200 W.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.549-556
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• 2012

The tribological behavior of CrMoN films with respect to surface chemistry was investigated by using X-ray photoelectron spectroscopy (XPS). All of the films were prepared from a hybrid PVD system consisting of DC unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. The tribological property of the films was evaluated by a friction coefficient using a Ball-on-disk type tribometer. The chemistry of wear track was analyzed by energy dispersive spectroscopy (EDS) and XPS. The friction coefficient was measured to be 0.4 for the CrMoN film, which is lower than that of a monolithic CrN film. EDS and XPS results imply the formation of an oxide layer on the coating surface, which was identified as molybdenum oxide phases, known to be a solid lubricant during the wear test.