• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.10a
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• pp.198-200
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• 1986

In this paper, the optical modem for data link realization is designed with the advantages of optical fiber : large handwidth, no electromagnetic interference, high speed and long-haul communications. Biphase cording format is used for the sync, and async, transmissions. Modem interface conform to the CCITT V.24 standard for the compatibility with existing systems. 0/E and E/0 converters are designed using LED-APD pair for long wave length and LD-APD for short wave length, respectively. As a result, the system is capable of transmitting at any bps within dc to 200Kbps in async, and at 1200bps up to 57.6Kbps in sync. transmission.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.157-159
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• 2004

본 논문에서는 접지면에 형성된 디펙트를 갖는 전송선로 구조인 DGS 등가회로도의 식각된 접지면에 바랙터 다이오드를 접합시켜, 그 영향을 살펴 보았다. 제시된 DGS는 아령 모양의 디펙트로 하였으며, 칩 형태의 집중소자인 인덕터와 캐패시터로 바이어스 회로를 구현하였다. 바랙터 다이오드의 DC 전압 인가에 따른 C값의 변화를 통해서 전송선로의 임피던스를 변화 시켰다. 이에 따른, 가변 전송선로의 파라미터를 추출하고, 구조 및 특성에 관하여 연구하였다.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.10
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• pp.542-549
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• 2004

The conventional fault location algorithms based on the travelling waves have an inherent problem. In cases of the close-up faults occurring near the relaying point and of the faults having zero degree inception angle of voltage signals, the conventional algorithms can not estimate an accurate fault distance. It is because the shapes of travelling waves are near sinusoidal in those cases. A new method solving this problem is presented in this paper. An FIR(Finite Impulse response) filter which makes high frequency components prominent and makes the power frequency component and dc-offset attenuated is used. With this method, the cross-correlation peak is to be very clear when a close-up fault or a fault having near zero-degree inception angle occurs. The cross-correlation peaks can be clearly distinguished and accurate fault location is practically possible consequently. A series of simulation studies using EMTP(Electromagnetic Transients Program) show that the proposed algorithm can calculate an accurate fault distance having maximum 2% or less error.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.546-550
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• 2002

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.10
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• pp.1215-1221
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• 1999

A high speed digital distance relaying algorithm based on a Wavelet Transformation is proposed. To obtain stable phasor values very quickly, first, a lowpass filter which has low cutoff frequency is used. Secondly, db2(Daubechies 2) Wavelet which has the data window of 4 samples is used. A FIR filter which removes the DC-offset component in current relaying signals is applied. In accordance with a series of tests, the operation time of the relaying algorithm is less than 3/4 cycles after faults in a 80 [km], 154[kV], 60[Hz] over-head transmission line system.

• Proceedings of the KIEE Conference
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• 1999.07c
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• pp.1287-1289
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• 1999

The UPFC(Unified Power Flow Controller) controls the magnitude and phase of the series injected voltage to exchange the real and reactive power with transmission line. The UPFC consists of two inverters connected together through the DC link capacitor. This paper describes the detailed UPFC switching-level model. PWM (Pulse Width Modulation) method is chosen to operate the inverters. Automatic voltage control mode and automatic power flow control mode is selected to control the UPFC. EMTP simulation is offered to obtain the basic operation characteristics of the UPFC and the dynamic characteristics of the UPFC is studied in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.387-388
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• 2008

This paper presents the design approach and test results of the Q-band precision subminiature coaxial adaptor based on transmission line theory using multi-step impedance and air-holes to increase its cutoff frequency. In order to increase the frequency performance, the adaptor is designed with hooked structure, fixing step, multi-air-holes, and outer conductor. The return loss increments due to the hooked structure and multi air-holes are minimized to 2 dB and 1.5 dB, respectively. A VSWR(Voltage Standing Wave Ratio) of <1.2 is obtained from DC to 40 GHz, while guaranteeing the durability of the adaptor from room-temperature$(25^{\circ}C)$ to $120^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.339-344
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• 2014

This paper presents a novel bipolar junction transistor (BJT) based electrostatic discharge (ESD) protection device. This protection device was designed for 20V power clamps and fabricated by a process with Bipolar-CMOS-DMOS (BCD) $0.18{\mu}m$. The current-voltage characteristics of this protection device was verified by the transmission line pulse (TLP) system and the DC BV characteristic was verified by using a semiconductor parameter analyzer. From the experimental results, the proposed device has a trigger voltage of 29.1V, holding voltage of 22.4V and low on-resistance of approximately $1.6{\Omega}$. In addition, the test of ESD robustness showed that the ESD successfully passed through human body model (HBM) 8kV. In this paper, the operational mechanism of this protection device was investigated by structural analysis of the proposed device. In addition, the proposed device were obtained as stack structures and verified.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.412-415
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• 1999

In this paper, we describe an implementation of the B-Link bus interface logic for a directory controller and a remote access cash controller in the SCI-based CC-NUMA multimedia server developed by ETRI . The CC-NUMA multimedia server is composed of a number of Pentium III SHV nodes and a SCI interconnection network. To communicate with remote nodes, each node has a CC-Agent which consists of a processor bus interface(PIF). a directory controller(DC), a remote access cash controller(RC), and two SCI 1ink controllers(LCs). The B-Link bus interface logic is developed for a directory controller and a remote access cash controller in order to communicate with a SCI link controller on a B-Link bus. It consists of a sending master controller a receiving slave controller, and asynchronous data buffers. And It performs a self-arbitration, a data packet transmission, a queue allocation, an early terminal ion. and a cut-through data path.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.213-216
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• 2001

The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.