• Transactions of the Korean hydrogen and new energy society
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• v.3 no.2
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• pp.35-43
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• 1992

Thin Film yttrium, 500 nm thick, was prepared by electron beam evaportion on sapphire substrate. Film was hydrogenated at room temperature upto 1 bar hydorgen pressure without any activation process. Electrical resistivity was measured by four-point DC method in the temperature range between room temperature and 30 K for various hydorgen concentration x = 0 to 2.924 of $YH_x$ sample. Temperature dependent resistance of $YH_{2\;924}$ shows low temperature minmum at 105K ($36{\mu}{\Omega}cm$ deep), the metal-semiconductor transition at 260K, and a hysteresis, which are similar behavior to bulk $YH_x$(x>2) experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1388-1389
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• 2006

금속의 전기비저항 측정은 4단자 방법, van der Pauw 방법, Four Point Probe(FPP) 방법 등이 있으며, 이들의 정확한 측정방법을 고찰하고, 그 중 FPP 방법에 의한 비저항의 두께효과를 비교 분석하기 위하여 비자성 금속 SUS 316을 두께별로 가공한 후 실험하였다. 그 결과 4단자 및 van der Pauw 방법으로 측정된 도전율은 각각 2.273 %IACS으로 나타났으며, FPP방법으로 측정된 도전율은 probe spacing 5.0 mm, dc current 10 A에서 시료의 두께가 2 mm일 때 2.288 %IACS, 3 mm일 때 2.271 %IACS로서 상기 두 방법으로 측정한 결과와 0.5 %이내에서 일치하였으나, 시료가 5mm 및 11 mm 에서는 매우 큰 오차를 나타냈다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.313-314
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• 2007

Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.176-179
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• 2003

ITO films on PET substrate were prepared by DC magnetron sputtering method using powdery target with different deposition conditions. In addition, the electrical and optical properties were investigated. As the sputtering power and working pressure were higher, the resistvity of ITO films increased. The optical transmittance deteriorated with increasing sputtering power and thickness. As the working pressure increased, however, the optical transmittance improved at visible region of light. From these results, we could deposited ITO films with $8{\times}10^{-3}\;{\Omega}-cm$ of resistivity and 80% of transmittance at optimal conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.337-338
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• 2006

The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.352-356
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• 2007

The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.57-60
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• 2009

Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.