Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Ga-doped ZnO transparent thin films by using multilayer

다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성

  • 김봉석 (성균관대학교 정보통신공학과) ;
  • 황현석 (성균관대학교 정보통신공학과) ;
  • 이규일 (성균관대학교 정보통신공학과) ;
  • 정규원 (한국전력 중앙교육원) ;
  • 송준태 (성균관대학교 정보통신공학과)
  • Published : 2007.06.21
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Abstract

Ga-doped ZnO(GZO) multilayer coatings were prepared on glass by DC sputtering. Optimization of the deposition conditions of both AZO and Au layers were performed for better electrical and optical characteristics. The properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibits low resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77%. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

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