• Journal of Drive and Control
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• v.13 no.3
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• pp.15-23
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• 2016

The direct-drive servo valve(DDV) is a kind of one-stage valve because the main spool valve is directly driven by the dc motor. Since the DDV structure is simple, it is less expensive, more reliable, and offers a reduced internal leakage and a reduced sensitivity to fluid contamination. The control system of the DDV is highly nonlinear due to a current limiter, a voltage limiter, and the flow-force effect on the spool motion. The shape of the step response of the DDV-control system varies considerably according to the magnitudes of the step input and the load pressure. The system-design requirements mean that the overshoots should be less than 20%, and the errors at 0.02s should be less than 2%, regardless of the reference-step input sizes of 1V and 5V and the load-pressure magnitudes of 0MPa and 20.7MPa. To satisfy the system-design requirements, the PID-controller parameters of $K_c$, $T_i$ and $T_d$, and the derivative-feedback gain of $K_{der}$ are designed using the root locus and manual tuning.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.401-406
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• 2005

Two dimensional MEDICI simulator is used to study the electrical characteristics of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics with the variations of p-base impurity concentrations and current flow. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have tile better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer u-base structure under the floating N+ emitter indicates to have the better characteristics of latch-up current and breakover voltage in spite of the same turn-off characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.2
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• pp.305-314
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• 2017

Most of the existing researches on systemwide optimization of generator maintenance scheduling do not consider the equivalent operating hours(EOHs) mainly due to the difficulties of calculating the EOHs of the CCGTs in the large scale system. In order to estimate the EOHs not only the operating hours but also the number of start-up/shutdown during the planning period should be estimated, which requires the mathematical model to incorporate the economic dispatch model and unit commitment model. The model is inherently modelled as a large scale mixed-integer nonlinear programming problem and the computation time increases exponentially and intractable as the system size grows. To make the problem tractable, this paper proposes an EOH calculation based on demand grouping by K-means clustering algorithm. Network congestion is also considered in order to improve the accuracy of EOH calculation. This proposed method is applied to the actual Korean electricity market and compared to other existing methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.187-187
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• 2007

This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

• Journal of Surface Science and Engineering
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• v.40 no.4
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• pp.165-169
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• 2007

Compared to conventional Indium Tin Oxide (ITO) film deposition methods, cesium (Cs) assisted sputtering offers higher film characteristics in terms of electrical, mechanical and optical properties. However, it showed highly non-linear characteristics between process input factors and equipment responses. Therefore, to maximize film quality, optimization of manufacturing process is essential and process characterization is the first step for process optimization. For this, we designed 2 level design of experiment (DOE) to analyze ITO film characteristics including film thickness, resistivity and transmittance. DC power, pressure, carrier flow, Cs temperature and substrate temperature were selected for process input variables. Through statistical effect analysis methods, relation between three types of ITO film characteristics and five kinds of process inputs are successfully characterized and eventually, it can be used to optimize Cs assisted sputtering processes for various types of film deposition.

• Journal of Surface Science and Engineering
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• v.45 no.5
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.20 no.5
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• pp.357-363
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• 2008

In order to investigate $CO_2$ heat transfer coefficient and pressure drop by PAG oil concentration during $CO_2$ evaporation, the experiment on evaporation heat transfer characteristics in a horizontal micro-fin tube was performed. The experimental apparatus consisted of a test section, a DC power supply, a heater, a chiller, a mass flow meter, a pump and a measurement system. Experiment was conducted for various mass fluxes($400{\sim}1200\;kg/m^2s$), heat fluxes($10{\sim}30\;kW/m^2$) and saturation temperatures ($-5{\sim}5^{\circ}C$), and PAG oil concentration($0{\sim}5\;wt%$). The variation of the heat transfer coefficient was different in accordance with the oil concentration. With the increase of the oil concentration, the evaporation heat transfer coefficient decreased and the delay of dryout by oil addition was found. Pressure drop increased with the increase of the oil concentration and heat flux, and the decrease of saturation temperature.

• International Journal of Computer Science & Network Security
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• v.24 no.4
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• pp.197-205
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• 2024

This paper presents a fully automated stand-alone irrigation system with GSM (Global System for Mobile Communication) module. Solar energy is utilized to power the system and it is aimed to conserve water by reducing water losses. The system is based on a DC water pump that draws energy from solar panels along with automated water flow control using a moisture sensor. It is also fitted with alert and protection system that consists of an ultrasonic sensor and GSM messages sender that transmits signals showing the levels of the water in the reservoir and the battery charge. The control system is designed to stop the water pump from pumping water either when the battery level drops to equal or less than 10% of its full charge, or when the water level becomes less than 10 cm high in the reservoir. The experimental results revealed that the system is appropriate to use in remote areas with water scarcity and away from the national grid.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.2
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• pp.71-79
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• 2008

High voltage distribution lines in the electric railway system placed according track with communication lines and signal equipments. Case of the over head lines is occurrence the many fault because lightning, rainstorm, damage from the sea wind and so on. According this fault caused protection device to wrong operation. One line ground fault that occurs most frequently in railway high voltage distribution lines and sort of faults is line short, three line ground breaking of a wire, and so on. For this reason we need precise maintenance for prevent of the faults. The most important is early detection and fast restoration in time of fault for a safety transit. In order to develop an advanced fault location device for 22.9[kV] distribution power network in electric railway system this paper deals with new fault locating algorithm using flow technique which enable to determine the location of the fault accurately. To demonstrate its superiorities, the case studies with the algorithm and the fault analysis using PSCAD/EMTDC (Power System Computer Aided Design/Electro Magnetic Transients DC Analysis Program) were carried out with the models of direct-grounded 22.9[kV] distribution network which is supposed to be the grounding method for electric railway system in Korea.