• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• Journal of the Optical Society of Korea
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• v.9 no.1
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.297-302
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• 2015

Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.165-172
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• 2012

Integrated-optic asymmetric Mach-Zehnder interferometer at $1.3{\mu}m$ wavelength and segmented electrode structure were designed and fabricated as a sensing part for the electric-field measurement system. The device was simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. Almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}/2$ intrinsic phase difference. Expected experimental measurements were observed for 1KHz electrical signal bandwidth.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.15-22
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• 2011

Integrated-optic symmetric/asymmetric Mach-Zehnder interferometers at $1.3{\mu}m$ wavelength were studied as sensing part for electric-field measurement system. The devices were simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. A half-wave voltage of $V_{\pi}$=6.6V and modulation depth of 100% and 75% for a symmetric structure were measured for 200Hz and 1kHz electrical signal bandwidth, respectively. By the way, almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}$/2 intrinsic phase difference. Expected experimental measurements were observed for 1kHz electrical signal bandwidth.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.45-51
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• 2011

This paper presents a wideband low-noise amplifier (LNA) covering 800MHz~5.8GHz for various wireless communication standards by utilizing in a 0.13um CMOS technology. Particularly, the LNA consists of two stages to improve the low-noise characteristics, that is, a cascode input stage and an output buffer with noise cancellation technique. Also, a feedback resistor is exploited to help achieve wideband impedance matching and wide bandwidth. Measure results demonstrate the bandwidth of 811MHz~5.8GHz, the maximum gain of 11.7dB within the bandwidth, the noise figure of 2.58~5.11dB. The chip occupies the area of $0.7{\times}0.9mm^2$, including pads. DC measurements reveal the power consumption of 12mW from a single 1.2V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1108-1111
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• 2015

In this paper, a ${\times}49$ frequency multiplier based on a ring oscillator and a multi-push multiplier is presented. The proposed ${\times}49$ frequency multiplier consists of two ${\times}7$ frequency multipliers and these multiplier is connected by injection-locking technique. Each ${\times}7$ frequency multiplier consists of a ring oscillator with 14-phase output signal and 7-push frequency multiplier requiring 14-phase input. The proposed ${\times}49$ frequency multiplier provides 2.78~2.83 GHz output signal with 56.7~57.7 MHz input signal. This operation frequency is defined that the output power difference between the carrier and the spur is above 10 dB. The proposed chip consumes 13.93 mW.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.