Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Etching Characteristics of SnO2 Thin Films Using High Density Plasma

고밀도 플라즈마를 이용한 SnO2 박막의 건식 식각 특성

  • Kim, Hwan-Jun (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Seung-Han (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 김환준 (중앙대학교 전자전기공학부) ;
  • 주영희 (중앙대학교 전자전기공학부) ;
  • 김승한 (중앙대학교 전자전기공학부) ;
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Received : 2013.10.04
  • Accepted : 2013.10.23
  • Published : 2013.11.01
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Abstract

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

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