• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.12
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• pp.1992-1999
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• 2016

The plasma process is applied to various industrial fields such as high-tech IT industry, textiles and medical. Therefore, there is increasing interest in the plasma power supply, and demand for power devices of high efficiency and high power density is increased. Plasma power supply for process must solve the arc problem, when the plasma is unstable. The output capacitor is closely related to the arc problem. If the output capacitor is smaller, the damage from the arc problem is reduced. However, the small value of the output capacitor affects the operating characteristics of the power supply. In this paper, a LLC resonant converter is adopted, because it can achieve high efficiency and power density in the plasma DC power supply. However, due to the small value of the output capacitor, the converter is operated as a LLCC resonant converter. Therefore, a gain characteristic of LLCC resonant converter is analyzed by using the FHA (First Harmonic Approximation) in plasma power supply. Simulation and experimental results are presented to verify the characteristic analysis of LLCC Resonant Converter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.944-949
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• 2003

In this paper, the double balance mixer(DBM) for Ku-band LNB using InGaP/GaAs HBT process is suggested for the characteristics of low DC power consumption, low noise figure, low intermodulation distortion and wide dynamic range. The 5 dB conversion gain, 14 dB NF, bandwidth 17.9 GHz and 50.34 dBc IMD are obtained under RF input power of -23 dBm, with bias condition as 3 V and 16 mA. The linearity of InGaP/GaAs HBT, the broad band input matching scheme and the optimization of bias point result in the low IMD, the broad bandwidth and the low power consumption characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.1
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• pp.13-22
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• 2001

This paper presents three dimensional structure of RF packages and the improvement effect of its electrical characteristics when implementing RF transceivers. We divided RF modules into several subunits following each subunit function based on the partitioning algorithm which suggests a method of three dimension stacking interconnection, PAA(pad area array) interconnection and stacking of three dimensional RF package structures. 224MHz ITS(Intelligent Transportation System) RF module subdivided into subunits of functional blocks of a receiver(RX), a transmitter(TX), a phase locked loop(PLL) and power(PWR) unit, simultaneously meeting the requirements of impedance characteristic and system stability. Each sub­functional unit has its own frequency region of 224MHz, 21.4MHz, and 450KHz~DC. The signal gain of receiver and transmitter unit showed 18.9㏈, 23.9㏈. PLL and PWR modules also provided stable phase locking, constant voltages which agree with design specifications and maximize their characteristics. The RF module of three dimension stacking structure showed $48cm^3$, 76.9％ reduction in volume and 4.8cm, 28.4％ in net length, 41.8$^{\circ}C$, 37% in maximum operating temperature, respectively. We have found that three dimensional PAA package structure is able to produce high speed, high density, low power characteristics and to improve its functional characteristics by subdividing RF modules according to the subunit function and the operating frequency, and the features of physical volume, electrical characteristics, and thermal conditions compared to two dimensional RF circuit modules.

• Journal of Power Electronics
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• v.11 no.3
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• pp.360-368
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• 2011

This paper proposes an active frequency with a positive feedback in the d-q frame anti-islanding method suitable for a robust phase-locked loop (PLL) algorithm using the FFT concept. In general, PLL algorithms for grid-connected PV PCS use d-q transformation and controllers to make zero an imaginary part of the transformed voltage vector. In a real grid system, the grid voltage is not ideal. It may be unbalanced, noisy and have many harmonics. For these reasons, the d-q transformed components do not have a pure DC component. The controller tuning of a PLL algorithm is difficult. The proposed PLL algorithm using the FFT concept can use the strong noise cancelation characteristics of a FFT algorithm without a PI controller. Therefore, the proposed PLL algorithm has no gain-tuning of a PI controller, and it is hardly influenced by voltage drops, phase step changes and harmonics. Islanding prediction is a necessary feature of inverter-based photovoltaic (PV) systems in order to meet the stringent standard requirements for interconnection with an electrical grid. Both passive and active anti-islanding methods exist. Typically, active methods modify a given parameter, which also affects the shape and quality of the grid injected current. In this paper, the active anti-islanding algorithm for a grid-connected PV PCS uses positive feedback control in the d-q frame. The proposed PLL and anti-islanding algorithm are implemented for a 250kW PV PCS. This system has four DC/DC converters each with a 25kW power rating. This is only one-third of the total system power. The experimental results show that the proposed PLL, anti-islanding method and topology demonstrate good performance in a 250kW PV PCS.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.637-641
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• 2006

We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.461-464
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• 1998

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.9-12
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• 2000

InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1779-1780
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• 2008

This paper presents a switching system of speed controller between PI (Proportional_Integrator) and P_LPF (Proportional_Low pass filter) to improve overshoot and slow settling time in DC motor. When the integrator is saturated in the PI controller, the error signal is integrated continuously. For preventing the state, the Anti-windup scheme is proposed. But the Anti-windup scheme dose not show stable characteristics in the whole speed command section after tuned a gain. By using P_LPF switching system these problems are improved and there is no need to tune of user hereafter, when the integrator is saturated. The proposed method is verified by the simulation results using MATLAB SIMULINK.