Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.11b
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- Pages.9-12
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- 2000
Modeling of InP/InGaAs HPT with ITO Transparent Emitter Contact
ITO 투명전극을 갖는 InP/InGaAs HPTs 모델링
- Jang, Eun-Sook (Dept. of Electronics Yeungnam University) ;
- Choi, Byong-Gun (ETRI) ;
- Shin, Ju-Sun (Optoway) ;
- Sung, Kyang-Su (Dept. of Electronics Yeungnam University) ;
- Han, Kyo-Yong (Dept. of Electronics Yeungnam University)
- 장은숙 (영남대학교 전자공학과 광전자 연구실) ;
- 최병건 ;
- 신주선 (옵토웨이) ;
- 성광수 (영남대학교 전자공학과 광전자 연구실) ;
- 한교용 (영남대학교 전자공학과 광전자 연구실)
- Published : 2000.11.01
Abstract
InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.
Keywords