Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characteristization of AlGaAs/InGaAs/GaAs Heterostructure Quantum-Wire FET

AlGaAs/InGaAs/GaAs 이종접합 양자선-FET의 제작 및 특성

  • 손영진 (포항공과대학교 전자컴퓨터공학부) ;
  • 이봉훈 (포항공과대학교 전자컴퓨터공학부) ;
  • 정문영 (포항공과대학교 전자컴퓨터공학부) ;
  • 정윤하 (포항공과대학교 전자컴퓨터공학부)
  • Published : 2000.11.01
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Abstract

A quantum-wire field effect transistor(QW-FET) using asymmetric double InGaAs channel and Si-delta doped barrier has been fabricated. It exhibited good modulation and saturation characteristic in the range of ${\mu}\textrm{A}$ current level. For estimated channel width of 150nm QW-FET, maximum transconductance was about 400 mS/mm which is higher than a conventional heterostructure FET(HFET) with the same epi-structure.

Keywords