• 한국표면공학회지
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• 제55권6호
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• pp.308-318
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• 2022

The surface modification and treatment using thermal plasma were reviewed in academic fields. In general, thermal plasma is generated by direct current (DC) and radiofrequency (RF) power sources. Thermal spray coating, a typical commercial process using thermal plasma, is performed by DC thermal plasma, whereas other promising surface modifications have been reported and developed using RF thermal plasma. Beyond the thermal spray coating, physical and chemical surface modifications were attempted widely. Superhydrophobic surface treatment has a very high industrial demand particularly. Besides, RF thermal plasma system for large-area film surface treatment is being developed. Thermal plasma is especially suitable for the surface modification of low-dimensional nanomaterial (e.g., nanotubes) by utilizing high temperature and rapid quenching. It is able to synthesize and modify nanomaterials simultaneously in a one-pot process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.157-160
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• 1990

A dot matrix type DC Plasma Display Panel was fabricated and it's characteristics was investigated. Paschen curve and I-V curve of various gas mixture was given. Optimal gas mixing ratio, pressure and operating point was determined. The priming effect was observed and discharge delay time was measured with varing applied voltage, priming current, priming distance, duty ratio.

• 한국대기환경학회:학술대회논문집
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• 한국대기환경학회 2000년도 추계학술대회 논문집
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• pp.415-416
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• 2000

플라즈마 화학공정을 이용한 유해대기오염물질(HAP$_{s}$ 또는 VOC$_{s}$ ) 처리기술은 기존의 촉매연소, 소각 및 흡착기술등에 비하여 낮은 초기 투자비, 여러가스의 동시처리, 소형화 또는 이동 배출원에 대한 적용이 가능하며, 대상가스의 종류나 발생량등에 따라 여러 전원(AC, Pulse, DC)을 이용한 기술개발이 가능하여 많은 연구가 진행되고 있다.$^{(1-4)}$ (중략)

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1776-1778
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• 1997

WIPS is a plasma device which has a wire anode, a coaxially-set cylindrical cathode, and aperture electrodes located in both ends of the cylinder. This electrode configuration forces the potential between the anode and the cathode to change logarithmically with radial direction. Since electrons are confined this logarithmic potential, the high-density plasma is produced even at a rather low anode voltage. In this paper we investigate characteristics of dc and pulse discharges, in which

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.219-220
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• 2009

이번 실험에서는 TiN의 건식 식각 특성을 연구하기 위해 $BCl_3/Ar/N_2$ 유도 결합플라즈마를 이용하였다. BCl3와 Ar의 가스 비율이 $BCl_3$ (5 sccm)/Ar (15 sccm)/N (4 sccm) 인 상황에서 RF power와 DC bias, 그리고 process pressure을 식각변수로 설정하였다. TiN의 식각률은 Alpha-step 500으로 측정하였고 표면의 식각 후 화학반응은 XPS로 측정하였다.

• 한국세라믹학회지
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• 제51권5호
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• 전력전자학회논문지
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• 제13권2호
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• pp.103-109
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• 2008

본 논문은 무전극램프의 조광제어에 관한 안정기 설계방법을 제안하였다. 주파수 가변을 통한 전력제어는 램프의 등가 임피던스를 나타내는 유도코일간의 결합계수, 플라즈마 저항은 전력에 대한 함수이기 때문에 부적합하다. 따라서 본 논문은 직류링크전압을 가변함으로서 램프 임피던스와 독립적으로 램프의 출력 전력을 제어함으로서 무전극램프를 조광제어 하였다. 직류 링크 전압 가변방법은 벅 컨버터에 의해 제어하였으며, 제안된 설계 방법의 시뮬레이션과 실험 결과를 통하여 논문의 타당함을 증명하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.949-951
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• 1992

A low pressure DC plasma jet has been used to obtain diamond films from a mixture of $CH_4$ and $H_2$ with high deposition rate (>1$\mu\textrm{m}$/min). The effects of the deposition conditions such as torch geometry, substrate temperature, gas mixing ratio, chamber pressure, axial magnetic field on the diamond film properties such as morphology, purity, uniformity of the film and deposition rate, etc. have been examined with the aid of Scanning Electron Microscopy, X-Ray Diffraction, and Raman Spectroscopy. Both the growth rate and particle size increased rapidly for low methane concentrations but saturated and the morphology changed from octahedral to cubic structure when the concentration exceeded 1.0 %. Higher growth rates (>1.5${\mu}m$/min) can be obtained by applying an axial magnetic field to the DC plasma jet. Diamond obtained from the magnetized plasma jet also shows a sharp peak at 1332.5$cm^{-1}$ in the Raman Spectra and this result implies that higher growth rate with a good quality diamond films can he obtained by applying an external magnetic field to the plasma jet.

• 한국초전도ㆍ저온공학회논문지
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• 제14권1호
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• pp.1-3
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• 2012

LMO($LaMnO_3$) buffer layer of superconducting coated conductor was deposited on IBAD-MgO template in the plasma atmosphere at $650^{\circ}C$ which is relatively low compared with conventional deposition temperature of more than $800^{\circ}C$. Deposition method of LMO was DC sputtering, and target and deposition chamber were connected to the cathode and anode respectively. When DC voltage was applied between target and chamber, plasma was formed on the surface of target. The tape substrate was located with the distance of 10 cm between target and tape substrate. When anode bias was connected to the tape substrate, electrons were attracted from plasma in target surface to the tape substrate, and only tape substrate was heated by electron bombardment without heating any other zone. The effect of electron bombardment on the surface of substrate was investigated by increasing bias voltage to the substrate. We found out that the sample of electron bombardment had the effect of surface heating and had good texturing at low controlling temperature.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.367-372
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• 2002

The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.