• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.109-110
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• 2018

ITER 토카막의 초전도코일에 전원을 공급하는 Plant는 CCPS (Correction Coil Power Supply System), TFPS(Toroidal Field Power Supply System), PFCS(Poloidal Field & Central Solenoid)으로 구성되어 있다. 각 Plant의 AC/DC 컨버터는 초전도 코일에 막대한 전류를 흘려 토카막 내에서 1억도에 달하는 열과 전자장의 압력으로 플라즈마상태의 수소를 결합시켜 핵융합에 도달하도록 한다. MCS(Master Control System)은 플라즈마가 핵융합을 잘 구현할 수 있도록 초전도 코일에 공급하는 전원을 총괄적으로 제어한다. 특히 PFCS MCS는 토카막 장치에서 다른 Plant와의 Interface가 복잡하여 설계 및 제작에 어려움이 많다. 본 논문에서는 PFCS MCS가 ITER의 설계요건과 국제기술기준에 맞게 설계하고, 제작하였는지를 확인하기 위해 공장에서 최종 검사하는 FAT(Factory Acceptance Test) 절차를 소개하고 여러 가지 시험을 통하여 평가한 내용을 보이고자 한다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.28-34
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• 2007

In this research, the characteristics of the DC discharge that was the logical gate input of discharge logic gate PDP newly proposed was considered. The logical output is induced by controlling the potential difference of inter-electrode according to the discharge path in the discharge logic gate. From the experimental result the discharge time lag was shortened to 1/3 and the voltage has decreased to 1/2 in the case to apply priming discharge for improving stability of these DC discharges compared with the case when it is not applied. Moreover, after the priming discharge ends, the space charge generated by this discharge influences it up to about $30[{\mu}s]$. And, as a measured result of the influence that the space charge exerts on the DC discharge with the change in time and spatial distance, it has been understood that there is a possibility that going away spatially can slip out the influence of the discharge easily as for going away from the discharge time-wise. Therefore the conclusion that the discharge logic gates of each scanning electrode can be operated independently is obtained.

• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.306-310
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• 2015

In this research, hematite nanoparticles were synthesized by DC thermal plasma process to increase the overall surface area. The effect of binders on hematite electrodes was investigated by changing the type and composition of binders when preparing electrodes. Nitrogen gas was also added to the DC thermal plasma process in order to dope the hematite with N for enhancing photoelectrochemical properties of hematite nanoparticles. The efficiency of water splitting reaction was measured by linear sweep voltammetry (LSV) under solar simulator. In LSV measurements, the onset potential and maximum current density at a fixed voltage were measured. The durability of electrodes was checked by repeating LSV measurements. CMC (carboxymethyl cellulose) binder with 50 : 1 composition exhibits the highest current density of $12mA/cm^2$ and CMC binder with 20 : 1 composition, showing the initial current density of $3mA/cm^2$, endures 20 times of repetitive LSV measurements. Effects of nitrogen doping on hematite nanoparticles were proven to be insignificant.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.3
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• pp.215-220
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• 1999

$SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.229-229
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• 1999

교류형 플라즈마 방전 표시기(AC Plasma Display Panel, AC PDP)의 구동에서의 방전 현상은 기입방전, 유지방전, 소거 방전이 있다. 이중 유지 방전은 표시장치로서의 휘도와 계조의 표현을 위한 방전으로 표시기로서의 효율을 결정하게 된다. 본 연구에서는 유지 방전 전압의 상승 시간의 변화에 따른 방전현상과 휘도, 효율의 변화를 살펴 보았다. 방전 현상에서의 가장 큰 변화는 교류형 플라즈마 방전 표시기의 방전 개시 전압과 방전 유지 전압의 변화이다. 유지 전압의 상승시간이 증가할수록 방전 개시 전압과 방전 유지 전압의 변화이다. 유지 전압의 상승 시간이 증가할수록 방전 개시 전압과 방전 유지 전압의 차(sustain margin)는 감소하여 상승 시간이 1$\mu$s/100V 이상의 영역에서는 방전 개시 전압과 방전 유지 전압이 차이가 없어지게 된다. 이는 방전 유지 전극 위의 유전체에 쌓이게 되는 벽전하(wall charge) 양의 감소에 의한 방전 약화의 영향을 보여질 수 있다. 그러나 방전 유지 전압의 형태와 전류의 시간적인 변화를 살펴보면 이러한 약한 방전은 벽전하의 감소에 의한 방전 시의 전계 감소보다는 방전 전류의 발생 시간이 방전 전압이 증가하여 최고점에 이르지 못한 시간에 위치하여 방전이 형성될 때의 전계가 강하지 못하기 때문인 것을 알 수 있다. 방전 전류를 측정한 결과에 의하면 방전 전류의 시작은 변위 전류가 흐르고 난 후부터 시작되며 그 결과 방전 전류가 최고점에 도달하는 시간은 방전 전압 상승 시간이 길어질수록 낮은 전압에서 형성되게 된다. 또한 방전 유지 전압의 상승 시간이 길어질수록 플라즈마 방전표시기의 휘도와 효율은 낮아지고 이 결과 또한 약한 전계에서의 방전에 의한 결과로 생각되어진다.플라즈마의 강도값을 입력하여 플라즈마의 radiation을 검출하고, 스퍼터링 공정중 실질적인 in-situ 정보로 이용하였다. PEM을 통하여 In/Sn의 플라즈마 강도변화를 조사하였다. 초기 In/Sn의 플라즈마 강도(intensity)는 강도를 100하여, 산소를 주입한 결과, plasma intensity가 35 줄어들었고, 이때 우수한 ITO 박막을 얻을 수 있었다. Pulsed DC power를 사용하여 아크 현상을 방지하였다. PET 상에 coating 된 ITO 박막의 표면저항과 광투과도는 4-point prove와 spectrophotometer를 이용하여 분석하였고, AES로 박막의 두께에 따른 성분비를 확인하였다. ITO 박막의 광투과도는 산소의 유량과 sputter 된 In/Sn ion의 plasma emission peak에 따라 72%-92%까지 변화하였으며, 저항은 37$\Omega$/$\square$ 이상을 나타내었다. 박막의 Sn/In atomic ratio는 0.12, O/In의 비율은 In2O3의 화학양론적 비율인 1.5보다 작은 1.3을 나타내었다.로 보인다.하면 수평축과 수직축의 분산 장벽의 비에 따라 cluster의 두께비가 달라지는 성장을 볼 수 있었고, 한 축 방향으로의 팔 넓이는 fcc(100) 표면의 경우 동일한 Ed+Ep값에 대응하는 팔 넓이와 거의 동일한 결과가 나타나는 것을 볼 수 있다. 따라서 이러한 비대칭적인 모양을 가지는 성장의 경우도 cluster 밀도, cluster 모양, cluster의 양 축 방향 길이 비, 양 축 방향의 평균 팔 넓이로부터 각 축 방향의 분산 장벽을 얻어낼 수 있을 것으로 보인다. 기대할 수 있는 여러 장점들을 보고하고자 한다.성이 우수한 시

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1413-1416
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• 1995

Plasma Display(PDP) was successfully demonstrated on 30-60inch display panel. Research for mass production is also been accelerating. The basic study of PDP are mainly focused on understanding of micro discharge in each cell In this paper, DC PDP with Ag electrode is made and the discharge charcateristics in micro gap is studied with the variation of the distance of electrode gap and the pressure in discharge cell.

• Journal of Powder Materials
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• v.6 no.4
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• pp.286-293
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• 1999

This study was to analyse the relationship between process parameters of the sintered composite and plasma nitriding properties with pulsed DC plasma. Fe-40at%$SiC_p$ composites of full density were fabricated by hot pressing at 1100~$1150^{\circ}C$. Sintered Fe-40at%Al and Fe-40at%$Al/SiC_p$ alloys were nitrided under pulsed DC plasma. Excellent surface hardness in the FeAl alloys could be obtained by plasma nitriding. ($H_v$ :100gf, diffusion layer : 1100~$1450kg/mm^2$, matrix : 330~$360kg/mm^2$) The wear resistance of $FeAl/SiC_p$ composites were improved about by 4~6times than FeAl and nitrided $FeAl/SiC_p$ were improved about 2 times than $FeAl/SiC_p$ matrix.

• Journal of Institute of Control, Robotics and Systems
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• v.13 no.4
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• pp.315-319
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• 2007

A technique to model plasma processes was presented. This was accomplished by combining the backpropagation neural network (BPNN) and genetic algorithm (GA). Particularly, the GA was used to optimize five training factor effects by balancing the training and test errors. The technique was evaluated with the plasma etch data, characterized by a face-centered Box Wilson experiment. The etch outputs modeled include Al etch rate, AI selectivity, DC bias, and silica profile angle. Scanning electron microscope was used to quantify the etch outputs. For comparison, the etch outputs were modeled in a conventional fashion. GABPNN models demonstrated a considerable improvement of more than 25% for all etch outputs only but he DC bias. About 40% improvements were even achieved for the profile angle and AI etch rate. The improvements demonstrate that the presented technique is effective to improving BPNN prediction performance.