• 전자공학회논문지SC
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• 제45권3호
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• pp.51-58
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• 2008

본 논문은 반도체를 이용한 열화방지형 파워폴딩 제어기 설계에 관한 연구이다. 파워기술은 자동차용 사이드 미러 접이 콘트롤러, 와이퍼 콜트롤러, 안테나 콘트롤러, 파워윈도우 콘트롤러 등에 사용되고 있는 모터제어기술로 기존의 제어 방식은 DC 모터, 스위칭 소자 그리고 Relay 등을 조합한 방식을 채택하고 있다. 그러나 이러한 방식은 동작에 대한 신뢰성 및 내구성, 노이즈 등의 문제점을 극복하는데 한계를 갖고 있다. 따라서 본 논문에서는 모터의 동작을 감시하기 위한 방법으로 부하감지부에서 Motor의 Brush Noise를 감지하도록 하였고, R, C 충 방전 시정수에 의한 정밀시간 제어 방법으로 모터의 열화현상을 최소화하였다. 그리고 스위칭 소자로 반도체 소자인 MOSFET를 사용함으로써 동작의 안정성과 수명의 한계를 극복할 수 있는 제어장치를 설계하였다. 연구결과 모터의 반복 동작시간, Cut-off Time, 동작전압 범위, 전원 발생 노이즈 등에서 최대 11배 이상 향상된 효과를 얻을 수 있었다.

• 전자공학회논문지A
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• 제33A권10호
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• pp.130-138
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• 1996

The size of a device needs to scale down to increase its integrity and speed. As the size of the device is reduced, the hot-carrier degradation that severely effects on device reliabilty is concerned. In this paper, sub-micron buried-channel P-MOSFETs were fabircated, and the hot-carrier effects were invetigated. Also the hot-carrier effect in the buired-channel P-MOSFETs and the surface-channel P-MOSFETs were compared with simulation programs using SUPREM-4 and MINIMOS-4. This paper showed that the electric characteristics of sub-micron P-MOSFET are different from those of N-MOSFET. Also it showed that the punchthrough voltage ( $V_{pt}$ ) was abruptly drop after applying the stress and became almost 0V when the channel lengths were shorter than 0.6.mu.m. The lower punchthrough voltage causes the device to operte poorly by the deterioration of cut-off characteries in the switching mode. We can conclude that the buried channel P-MOSFET for CMOS circuits has a limit of the channel length to be around 0.6.mu.m.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.155-164
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• 2020

Here we report our preliminary results about nickel phosphide (Ni-P) electroless coating on the surface of cellulose paper (CP) and its feasibility as the anode for lithium (Li) batteries. In particular, CP can act as a flexible skeleton to maintain the mechanical structure, and the Ni-P film can play the roles of both the anode substrate and the active material in Li batteries. Ni-P films with different P contents were plated uniformly and compactly on the microfiber strands of CP. When they were tested as the anode for Li battery, their theoretical capacity per physical area was comparable to or higher than hypothetical pure graphite and P film electrodes having the same thickness. After the large irreversible capacity loss in the first charge/discharge process, the samples showed relatively reversible charge/discharge characteristics. All samples showed no separation of the plating layer and no detectable micro-cracks after cycling. When the charge cut-off voltage was adjusted, their capacity retention could be improved significantly. The electrochemical result was just about the same before and after mechanical bending with respect to the overall shape of voltage curve and capacity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권4호
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• pp.286-292
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• 2006

This paper presents the design of a low-voltage wide-band switched-capacitor (SC) filter for wireless communication receiver applications. The filter is the 5th-order Elliptic lowpass filter. With the clock frequency of 50MHz implying that an effective sampling frequency is 100MHz with double sampling scheme, the cut-off frequency of the filter is programmable to be 1.25MHz, 2.5MHz, 5MHz and 10MHz. For low-power systems powered by a single-cell battery, the SC filter was elaborately designed to operate at 1.2V power supply. Simulation result shows that the 3rd-order input intercept point (IIP3) can be up to 27dBm. The filter was fabricated in a $0.25-{\mu}m$ 1P5M standard CMOS technology and measured frequency responses show good agreement with the simulation ones. The current consumption is 34mA at a 1.2V power supply.

• 전력전자학회논문지
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• 제17권2호
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• pp.93-98
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• 2012

A precise measurement of the grid voltage is one of the essential techniques, which is required to connect a renewable energy to the grid. In general, when a filter is used to eliminate unnecessary harmonics and noises, a signal is distorted by phase delay, amplitude attenuation, and other distortions. And the response characteristic of a controller is directly affected by bandwidth of cut-off frequency of the filter. To alleviate this problems, we propose an effective algorithm based on DFT(Discrete Fourier Transform) instead of approaching the filter application. The proposed algorithm ensures high precise measurement of the grid voltage because it can extract the fundamental and harmonics from the raw signal without any distortions. The high performance of the proposed algorithm is verified by PSIM simulation and experiments of Grid-Connected VSI.

• ETRI Journal
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• 제27권6호
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.207-210
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• 2005

This paper describes a design of several ship's emergency lighting system(SELS) that power factor is improved and power is controlled extensively, and techniques to control and monitor this system in remote distance by PC serial communication. The remote monitoring control system is composed of emergency power supply system (EPSS), half bridge(HB)inverter, fluorescent lamp(FL), microprocessor, multi communication interface. EPSS checks the voltage of the emergency backup battery in real time. In case that the voltage of 13[V] or less has been detected for 5[msec] or longer for 3 times in a row, charger circuit is connected for battery charging. Experimental works using proposed system confirm that speedy and stable power to be supplied when main power source cut-off, compared with conventional analog type, and input power up to 35.0[%] by adjusting of pulse frequency of the HB inverter.

• 전력전자학회논문지
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• 제27권3호
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• pp.175-179
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• 2022

Magnetic arc extinguishing technology is effective as an extinguishing device for low-voltage direct current (DC) circuit breakers with a resistive load of ≤4 kW. The separation distance between the magnet and the electrical contact must be shortened to increase the magnetic arc extinguishing force. However, if the magnet is installed too close to the electrical contact points, the magnet is exposed to high temperatures due to the arc current generated when the load current is cut off and the magnetism is lost. To solve this problem, the effective magnetic flux density at the electrical contact can be maintained high by placing the arc extinguishing magnet in a tandem structure with the electrical contact point between them, and the proper separation distance between the contact points and the magnet can be maintained. In addition, an electric arc extinguishing technology that emits arc energy using a series circuit of diode and resistor is used to suppress the continuous arc voltage generated by the inductive load. For the proposed circuit breaker, the breaking characteristics are analyzed through the breaking test for the DC load of the 760 V level, the load power of 4 kW, and the time constant of 5 ms, and an appropriate arc extinguishing design guideline is proposed.

• 전기의세계
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• 제27권4호
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• 전기학회논문지P
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• 제58권3호
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• pp.328-333
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• 2009

In this paper, we have developed high performance SPD(surge protective device) and evaluated the characteristics in comparison with typical SPD used in the inside and outside of the country. The new SPD was composed of MOV(metal oxide varistor), GDT(gas discharge tube) and impedance such as resistors, capacitors or varistors. To estimate operating the characteristic of the SPD which was developed, it was measured surge voltage caused by fault current or surge according to IEC 61000-4-5. As a result it was found that the power supply was cut off by high performance SPD when caused a short-circuit. In addition we could know that it could prevent ELB(earth leakage breaker)'s malfunction caused by surge.