• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.374-374
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• 2011

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 일반적으로 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al의 구조로 제작된다. 태양전지는 p형과 n형 반도체의 접합에 의해서 동작을 하게 되며, CIGS 박막 태양전지에서는 p형으로 CIGS 박막과 n형으로 CdS 박막이 사용된다. CIGS 박막태양전지에서는 p형과 n형이 서로 다른 물질로 이루어진 이종접합을 이루게 되고, 계면에서의 밴드가 어떻게 형성이 되느냐에 따라 태양전지 성능에 영향을 미치게 된다. p형의 CIGS 박막은 주로 다단계 증발법에 의해 형성되고 3단계 공정조건에 의해 계면의 특성에 많은 영향을 미치게 된다. n형의 CdS 박막은 주로 chemical bath deposition (CBD) 법에 의해 제작된다. 이렇게 제작되는 CBD-CdS는 시약의 농도, pH (수소이온농도), 박막 형성시의 온도 등의 조건에 따라 특성이 변하게 된다. 본 논문에서는 3단계 공정시간을 변화시켜 제작된 CIGS 박막 위에 CBD-CdS 증착 조건 중 thiourea 의 농도를 변화시켜 CIGS 태양전지를 제작하고 그에 따른 특성을 살펴보았다. CIGS 박막은 3단계 공정시간을 490초와 360초로 하여 제작하였고, CdS 박막은 thiourea 농도를 각각 0.025 M과 0.05 M, 0.074 M, 0.1 M로 변화시켜가며 제작하였다. 제작된 CIGS 박막 태양전지는 CIGS 3단계 공정시간과 thiourea의 조건에 따라 최고 15.81%, 최저 14.13%로 나타내었다. 또한, 외부양자효율을 측정하여 제작된 CIGS 박막 태양전지의 파장에 따른 특성을 비교하였다.

• 한국표면공학회지
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• 제46권2호
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• pp.75-79
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• 2013

A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{\circ}C$ and $400^{\circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{\circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권12호
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• pp.607-613
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• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

• Current Photovoltaic Research
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• 제7권4호
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• pp.103-110
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• 2019

Cu(In,Ga)₃Se₅ (β-CIGS) has a band gap of 1.35 eV, which is an optimum value for high solar-energy conversion efficiency. The effects of Cu and Ga content on the cell performance were investigated previously. However, the effect of Se content on the cell performance is not well understood yet. In this work, β-CIGS films were fabricated by three-stage co-evaporation of elemental sources with various Se fluxes at the third stage instead of at all stages. The average composition of five samples was Cu_1.05(In_0.59,Ga_0.41)3Se_y, where the stoichiometric y value is 5.03 and the stoichiometric Se/metal (Se/M) ratio is 1.24. We varied the Se/metal ratio in a range from 1.18 to 1.28. We found that the best efficiency was achieved when the Se/M ratio was 1.24, which is exactly the stoichiometric value where the CIGS grains on the CIGS surface were tightly connected and faceted. With the optimum Se/M ratio, we were able to enhance the cell efficiency of a β-CIGS solar cell from 9.6% to 12.0% by employing a Na₂S post deposition treatment. Our results indicate that Na₂S post deposition treatment is very effective to enhance the cell efficiency to a level on par with that in α-CIGS cell.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.333-335
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• 2016

본 연구에서는 제 1원리 계산을 기반으로 대표적인 p-type TCO 중 하나인 Cu-based delafossite ($CuMO_2$, M=Al, Ga, In, Sc, Y) 의 band structure 및 그에 따른 경향성을 분석하였다. 그 결과, 13족에 속하는 M (Al, Ga, In)은 valence band maximum (VBM)에서 2개의 flat한 line이 나타났고, 3족에 속하는 M (Sc, Y)는 Z point에서도 VBM과 비슷한 값이 나타났다.

• 한국재료학회지
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• 제19권8호
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• pp.452-456
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• 2009

In high-efficiency Cu(In,Ga)$Se_2$ solar cells, Na is doped into a Cu(In,Ga)$Se_2$ light-absorbing layer from sodalime-glass substrate through Mo back-contact layer, resulting in an increase of device performance. However, this supply of sodium is limited when the process temperature is too low or when a substrate does not supply Na. This limitation can be overcome by supplying Na through external doping. For Na doping, an NaF interlayer was deposited on Mo/glass substrate. A Cu(In,Ga)$Se_2$ absorber layer was deposited on the NaF interlayer by a three-stage co-evaporation process As the thickness of NaF interlayer increased, smaller grain sizes were obtained. The resistivity of the NaF-doped CIGS film was of the order of $10^3{\Omega}{\cdot}cm$ indicating that doping was not very effective. However, highest conversion efficiency of 14.2% was obtained when the NaF thickness was 25 nm, suggesting that Na doping using an NaF interlayer is one of the possible methods for external doping.

• Current Photovoltaic Research
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• 제2권1호
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

• Journal of Magnetics
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• 제15권1호
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• pp.32-35
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• 2010

The effects of Cu-addition and die-upset temperature on the texture in the die-upset Nd-lean $Nd_xFe_{93.5-(x+y)}-Cu_yGa_{0.5}B_6$ (x = 9-12, y = 0-2) alloys were investigated. The die-upset Cu-containing Nd-lean $Nd_{12}Fe_{81.5-y}-Cu_yGa_{0.5}B_6$ (y = 1, 2) alloys showed a considerable texture. Texture in the Nd-lean alloys developed through basal plane slip deformation. The Cu-addition reduced the melting point of grain boundary phase facilitating grain gliding during the die-upsetting, and providing a greater chance for the $Nd_2Fe_{14}B$ grains to meet the deformation conditions. Die-upsetting at higher temperature facilitated grain gliding and plastic deformation, thus enhancing texture.

• Current Photovoltaic Research
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• 제3권2호
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• pp.39-44
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• 2015

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.