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Na2S 하부층을 이용한 Cu(In,Ga)Se2 광흡수층의 저온증착 및 Cu(In,Ga)Se2 박막태양전지에의 응용

Low-temperature Deposition of Cu(In,Ga)Se2 Absorber using Na2S Underlayer

  • 신해나라 (한국과학기술원 신소재공학과) ;
  • 신영민 (한국과학기술원 신소재공학과) ;
  • 김지혜 (한국과학기술원 신소재공학과) ;
  • 윤재호 (한국에너지기술연구원 태양광발전팀) ;
  • 박병국 (한국과학기술원 신소재공학과) ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Shin, Hae Na Ra (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Shin, Young Min (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Kim, Ji Hye (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Yun, Jae Ho (Divison of Photovoltaic Research, Korea Institute of Energy Research) ;
  • Park, Byung Kook (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • 투고 : 2014.02.22
  • 심사 : 2014.03.10
  • 발행 : 2014.03.31

초록

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.

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