Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Structural and Electrical Properties of Cu(In,Ga)Se2 Thin Films Prepared by RF Magnetron Sputtering without Selenization

셀렌화 공정을 제외한 RF 마그네트론 스퍼터링으로 제작된 Cu(In,Ga)Se2 박막의 구조 및 전기적 특성

  • Choi, Jung-Kyu (Department of Materials Science and Engineering, Pusan National University) ;
  • Hwang, Dong-Hyun (Department of Materials Science and Engineering, Pusan National University) ;
  • Son, Young-Guk (Department of Materials Science and Engineering, Pusan National University)
  • Received : 2013.03.13
  • Accepted : 2013.04.26
  • Published : 2013.04.30
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Abstract

A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{\circ}C$ and $400^{\circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{\circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.

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