• Journal of the Microelectronics and Packaging Society
• /
• v.14 no.4
• /
• pp.63-69
• /
• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.10
• /
• pp.1541-1550
• /
• 2001

This paper describes experimental investigations in the direct extrusion of copper clad aluminum rods through conical dies. Composite materials consist of two or more different material layers. Copper clad aluminum composite materials are being used fur economic and structural purposes and the development of an efficient production method of copper clad aluminum composite material rods by extrusion is very important, It is necessary to know the conditions in which successful uniform extrusion ,and sound cladding may be carried out without any defects in the direct extrusion. There are several variables that have an influence on determining a sound clad extrusion. In order to investigate the influence of these parameters on the hot direct extrudability of the copper clad aluminum composite material rods, the experimental study have been performed with various extrusion temperatures, extrusion ratios and semi-cone angles of die. Subsequently, the microscopic inspection of interface bonding is carried out for extruded products. By measuring hardness, along extrusion way of products, a variation of hardness has been discussed. Proportional flow state has been considered by measuring radius ratio of Cu sleeve and Al core before and after extrusion.

• Journal of the Korean Ceramic Society
• /
• v.43 no.9 s.292
• /
• pp.544-551
• /
• 2006

The sealing technique between a glass tube and a copper heat pipe in an evacuated tube solar collector is studied. In this study two different sealing techniques, such as flame method and furnace firing, are examined. After the sealing of a copper to a glass, the oxidation state of the copper and its bonding morphology were examined by SEM and XRD. Its oxidation was retarded by coating of borate solution on the copper, and $Cu_2O(cuprite)$ turned into CuO(tenorite) with increase in a firing temperature and firing time. Porous structure was found in the oxide layer when CuO formed. The best sealing morphology was observed when the thickness of the oxidation layer was less than $20{\mu}m$. The sealing technique performed in a furnace was promising and the satisfactory result was obtained when the sample was fired at $950^{\circ}C$ for 5 min under $N_2$ atmosphere. Annealing procedure is recommended to remove the stress left at the bonding zone.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.4
• /
• pp.7-13
• /
• 2019

Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

• Journal of the Korean Society for Precision Engineering
• /
• v.18 no.6
• /
• pp.166-173
• /
• 2001

Composite materials consists of two or more different material layers. The usefulness of clad metal rods forms the possibilities of combination of properties of different metals. Copper clad aluminum composite materials are being used for economic and structural purpose. In this study, composite billet consists of commercially pure copper and aluminum(A6061) and experimental conditions consist of the combinations of clad thickness, extrusion ratio, and semi-cone angle of die. In order to investigate the influence of these parameters on the hot direct extrudability of the copper clad aluminum composite material rods, the experimental study have been performed with various extrusion temperatures, extrusion ratios, semi-cone angles of die, and composition rate of Cu:Al.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.102-102
• /
• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.3
• /
• pp.1-7
• /
• 2011

Active brazing of ceramic to metal is reviewed in this paper. As one of the key aspect in joint techniques, active brazing has been developed to simplify the manufacturing procedure of brazed joints between ceramic and metal. The active filler metal includes Ag-Cu-Ti series, Cu-Ti series, Co-Ti series and so on. The active filler metal which supplies the chemical bonds between ceramic and metal, enhances the wetting of filler metal on ceramic surface and eliminates the need for metallization treatments. The residual stress caused by difference of coefficient of thermal expansion between ceramic and metal, holds a direct influence on the bonding strength and even results in a fracture. Good joints of ceramic to metal promote the miniaturization and simplicity of electronic components with multifunction.

• 한국전기화학회:학술대회논문집
• /
• 2005.07a
• /
• pp.383-390
• /
• 2005

Effect of applying a DC voltage on the interfacial reaction at the metal to zirconia interface was investigated utilizing an oxygen ionic conductivity of partially stabilized zirconia. The joining of copper rod and zirconia tube was carried out in Ar gas atmosphere at $1000^{\circ}C$. There are two type of the joining. The one is the reaction bond consisting of copper and zirconia was dominated by surface reaction with a undetectable very thin layer. It was found that copper elements were diffused to zirconia side, but that Zr ions were not diffused to copper side. These results mean application of a DC voltage to migrate oxygen to the copper-zirconia interface can oxidize metal at the copper-zirconia interface and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result mean application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cu.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.1
• /
• pp.9-15
• /
• 2008

Mokumegane is one of the sophisticated metal craft techniques enabling wood grain surface effect. To embody the mokumegane, an ingot of well-bonded stacked metal plates has been required. Traditionally prepared mokumegane ingots were bonded using charcoal which enables reduction atmosphere, but sometimes end up with collapse of bonding interface due to the lack of reliable process control. We proposed a systematic vacuum direct bonding process for ingots. First, we confirmed copper//copper homogeneous plate bonding at $900^{\circ}C$ by applying uniaxial press of 2.5kg. We observed 80min required to obtain 90%-bonding ratio and the diffusion coefficient would be enhanced up to 100 times due to surface effect. Second, by considering enhanced diffusion behavior, we also obtained optimum bonding condition in copper/silver heterogeneous plates that ensures 90%-bonding ratio at $700^{\circ}C$ for 10min with apply uniaxial press. A 7-layered copper/silver ingot is prepared successfully, and eventually the prototype mokumegane cases for mobile phone were fabricated with these ingot.

• Bulletin of the Korean Chemical Society
• /
• v.6 no.1
• /
• pp.7-11
• /
• 1985

The crystal structure of phlorizin, a ${\beta}$ -D-glucopyranoside of a flavonoid dihydrochalcone phloretin, has been determined by single crystal diffraction methods using diffractometer data obtained by the ${\omega}-2{\theta}$ scan technique with Cu $K{\alpha}$ radiation from a crystal with space group symmetry $P2_12_12_1$ and unit cell parameters a = 4.9094 (2), b = 19.109 (1), c = 23.275 (4) $\AA$. The structure was solved by direct methods and refined by full-matrix least-squares to a final R = 0.047 for the 1697 observed reflections. The dihydrochalcone moiety is flat and fully extended. The glucose ring has the $^4C_1$ chair conformation and the conformation of the primary alcohol group is gauche-gauche. The crystal packing is dominated by an extensive hydrogen bonding pattern. There are one strong and two weak intramolecular hydrogen bonds in the phlorizin molecule.