• Korean Journal of Materials Research
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• v.22 no.11
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• pp.587-590
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• 2012

Recently, the demand for the miniaturization of package substrates has been increasing. Technical innovation has occurred to move package substrate manufacturing steps into CMP applications. Electroplated copper filled trenches on the substrate need to be planarized for multi-level wires of less than $10{\mu}m$. This paper introduces a chemical mechanical planarization (CMP) process as a new package substrate manufacturing step. The purpose of this study is to investigate the effect of surfactant on the dishing and erosion of Cu patterns with the lines and spaces of around $10/10{\mu}m$ used for advanced package substrates. The use of a conventional Cu slurry without surfactant led to problems, including severe erosion of $0.58{\mu}m$ in Cu patterns smaller than $4/6{\mu}m$ and deep dishing of $4.2{\mu}m$ in Cu patterns larger than $14/16{\mu}m$. However, experimental results showed that the friction force during Cu CMP changed to lower value, and that dishing and erosion became smaller simultaneously as the surfactant concentration became higher. Finally, it was possible to realize more globally planarized Cu patterns with erosion ranges of $0.22{\mu}m$ to $0.35{\mu}m$ and dishing ranges of $0.37{\mu}m$ to $0.69{\mu}m$ by using 3 wt% concentration of surfactant.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.96-98
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• 2009

This report summarizes our recent efforts to produce large-grained CIGS materials from porous nanoparticle thin films. In our approach, a $Cu_xSe$ nanoparticle colloid were first prepared by reacting a mixture of CuI in pyridine with $Na_2Se$ in methanol at reduced temperature. purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form thin film. After thermal processing of the thin film under a selenium ambient. $Cu_xSe$ colloid and thin film were characterized by scanning electron microscopy, x-ray diffraction. The optical(direct) band gap energy of $Cu_xSe$ thin films is 1.5 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.478-481
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• 2002

We carried out the experiments for fabricating $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$(Bi2223) superconductor thick films on Cu tapes. Cu-free (Bi,Pb)-Sr-Ca-0 powder mixtures were screen- printed on Cu tapes and heat-treated at 840-$860^{\circ}C$ for several minutes in air. Surface microstructures and phases of films were analyzed by XRD and optical microscope. The electric properties of superconducting films were examined by the four probe method. At heat-treatment temperature, the printing layers were in a partially molten state by liquid reaction between CuO in the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure, it is thought that Bi2223 superconducting particles nucleate at interfaces between Bi2212 phase and liquid.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.938-944
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• 1997

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1917-1923
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• 2004

Although the proteolytic activity of the Cu(II) complex of cyclen (Cyc) is greatly enhanced upon attachment to a cross-linked polystyrene (PS), the Cu(II)Cyc-containing PS derivatives reported previously hydrolyzed only a very limited number of proteins. The PS-based artificial metalloproteases can overcome thermal, mechanical, and chemical instabilities of natural proteases, but the narrow substrate selectivity of the artificial metalloproteases limits their industrial application. In the present study, artificial metalloproteases exhibiting broad substrate selectivity were synthesized by attaching Cu(II)Cyc to a PS derivative using linkers with various structures in an attempt to facilitate the interaction of various protein substrates with the PS surface. The new artificial metalloproteases hydrolyzed all of the four protein substrates (albumin, myoglobin, ${\gamma}$-globulin, and lysozyme) examined, manifesting $k_{cat}/K_m$ values of 28-1500 $h_{-1}M_{-1}$ at 50 $^{\circ}C$. The improvement in substrate selectivity is attributed to steric and/or polar interaction between the bound protein and the PS surface as well as the hydrophobicity of the microenvironment of the catalytic centers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.273-284
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• 1994

Thermal behavior of Cu-Cr thin alloy films has been investigated by SEM, AES, and TEM. Cu-Cr alloy films containing 3wt% Cr, 8wt% Cr have been sputter-deposited onto polyimide substrates and heat treated at $400^{\circ}C$ for 2hrs in the various atmosphere. Before heat treatment, Cu and Cr content in the film are uniform through the thickness and oxygen content in the film is negligible. Redistribution of Cr, Cu, and O in the film due to heat treatment depends on the Cr content and heat treatment atmoshpere. There kinds of thermal behavior are ascribed to the formation of surface and interface oxides as well as internal oxidation. Hillocks are observed on the surface of Cu-Cr alloy films which have been heat treated in N2. The hillocks are composed of large grainss of Cu.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.343-350
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• 2020

The degradation of mechanical properties of nitride coatings to steel substrates is one of the main challenges for industrial applications. In this study, plasma nitriding treatment was used in order to increase the mechanical properties of Mo-Cu-N coating to the H13 tool steel. The nanostructured Mo-Cu-N coating was deposited using pulsed DC magnetron sputtering method with a single alloy Mo-Cu target. Mechanical properties of MoN-Cu coated samples after nitriding were found to be relatively better than non-nitrided MoN-Cu coating.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.27-33
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• 2005

The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to $300^{\circ}C$) and thermal strains (with ranges from 0.14 to $0.42\%$) in the Cu lines at a frequency of 10 kHz. Fatigue loading caused the development of severe surface roughness that was localized within individual grains which depends severely on grain orientations.