Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-I: Development of Cu-Ni Thin Film Strain Gauges

Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-I: Cu-Ni 박막 스트레인 게이지 개발

  • 민남기 (고려대학교 공대 제어계측공학과 금속공학과) ;
  • 이성래 (고려대학교 공대 제어계측공학과 금속공학과) ;
  • 김정완 (대성전기(주)) ;
  • 조원기 (LG멀티미디어 연구소)
  • Published : 1997.11.01
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Abstract

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

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