• 한국진공학회지
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• 제4권S1호
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• pp.113-117
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• 1995

MOCVD of Cu films were carried out on gold-TiN(1000$\AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $\rho$=1.8$\pm$0.1$\mu$$\Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{\circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.

• 한국주조공학회지
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• 제15권4호
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• pp.416-421
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• 1995

Recently Al-Cu-P alloys are used to refine primary Si of hypereutectic Al-Si alloys. Because it has inside AlP compound that acts as nucleation site in the melt, Al-Cu-P alloy has good refinement effect in lower holding temperature and after shoter holding times. In this study Al-Cu-P refinement agent was made by mechanical alloying method. When Al-13.5wt%Cu-1.5wt%P was alloyed mechanically for 30hr in Ar atmosphere by high energy ball mill, it had the refinement effect that showed primary Si size of about $30{\mu}m$ in Al-20wt%Si at $760^{\circ}C$, treated for 15min.

• Applied Microscopy
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• 제44권3호
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• pp.105-109
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• 2014

The microstructure of as-quenched $Al_{70}Cu_{18}Mg_{12}$ alloy has been investigated in detail using transmission electron microscopy. Al nano-crystals about 5 nm with a high density are distributed in the amorphous matrix, indicating amorphous matrix nano-composite can be synthesized in Al-Cu-Mg alloy. The high density of Al nano-crystals indicates very high nucleation rate and sluggish growth rate during crystallization possibly due to limited diffusion rate of solute atoms of Cu and Mg during solute partitioning. The result of hardness measurement shows that the mechanical properties can be improved by designing a nano-composite structure where nanometer scale crystals are embedded in the amorphous matrix.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.1-12
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• 1999

Brown oxide and/or black oxide layers were formed on the surface of Cu-based leadframe by chemical oxidation of leadframe in hot alkaline solutions, and their growth characteristics were studied. Then, to measure the adhesion strength between leadframe and epoxy molding compound (EMC), oxidized leadframe samples were molded with EMC and machined to form sandwiched double-cantilever beam (SDCB) specimens and pull-out specimens, respectively. Results showed that the adhesion strength of un-oxidized leadframe/EMC interface was inherently very poor but could be increased drastically with the nucleation of acicular CuO precipitates on the surface of leadframe. The presence of smooth faceted $Cu_2O $ on the surfaces of leadframe gave close to zero interfacial fracture toughness (Gc) and reasonable pull strength (PS). A direct correlation between Gc and PS showed that PS can be a measure of Gc only in a limited range.

• 한국주조공학회지
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• 제11권3호
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• pp.208-216
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• 1991

The solidification behavior of the squeeze cast composites of aluminum alloys reinforced with boron fiber($100{\mu}m$) and silicon carbide fibers($140{\mu}m$ and $15{\mu}m$) were investigated. Al-4.5wt%Cu and Al-l0wt%Mg were chosen for the matrix phase of the composites. In the squeeze cast specimen with high thermal difference between fiber and melt, the average secondary dendrite arm spacing(DAS) in reinforced alloy is smaller than that in unreinforced alloy. It was also observed that primary ${\alpha}$ and non-equilibrium eutectic, which seems to be penetrated and solidified at the final stage of the solidification of the matrix, are irregularly distributed around fibers. It is considered that cold fibers serve as heterogeneous nucleation site. While in the remelted and resolidified specimen without temperature difference, the DAS was not changed with reinforcement and microstructure reveals non-equilibrium eutectic with relatively uniform thickness around fibers. It might be evident the nucleation starts at interfiber region. Microsegregation decreases with the decrease in cooling rate and with reinforcement in the as-squeeze cast specimen. Al-10wt% Mg alloy shows less microsegregation than Al-4.5wt%Cu alloy.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.51-55
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• 2000

Using modified melt-textured grown targets, YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films were prepared by pulsed laser deposition technique at the laser energy density from 1 J/cm$_2$ to 4 J/cm$_2$. All the films showed c-axis preferred orientations, however, a-axis outgrowths on the film surface were considerably increased with an increase of the laser energy density. To examine the origin of the a-axis outgrowth formation, the microstructures of films deposited at 2 J/cm$_2$ and 4 J/cm$_2$ were investigated using X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. It was shown that a significant number of Y$_2$O$_3$ inclusions were formed during the growth of c-axis oriented films at 4 J/cm$_2$. These inclusions formed nucleation sites for the a-axis outgrowths. It is considered that, due to the unstable growth conditions with a high flux density of incident vapor species and the strain induced by the surrounding c-axis films, the Y$_2$O$_3$ inclusions would prefer the nucleation of α-axis grains.

• Corrosion Science and Technology
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• 제6권4호
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• pp.198-205
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• 2007

The initial stages of electrochemical oxidative CuI film formation on Cu(111), as studied by means of Cyclic Voltammetry (CV), in-situ Scanning Tunneling Microscopy (STM) and ex-situ Synchrotron X-ray Photoemission Spectroscopy (SXPS), indicate a significant acceleration of copper oxidation in the presence of iodide anions in the electrolyte. A surface confined supersaturation with mobile CuI monomers first leads to the formation of a 2D-CuI film via nucleation and growth of a Cu/I-bilayer on-top of a pre-adsorbed iodide monolayer. Structurally, this 2D-CuI film is closely related to the (111) plane of crystalline CuI (zinc blende type). Interestingly, this film causes no significant passivation of the copper surface. In an advanced stage of copper dissolution a transition from the 2D- to a 3D-CuI growth mode can be observed.

• 한국전자통신학회논문지
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• 제9권3호
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• pp.273-278
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• 2014

다결정 및 단결정 Cu 시편에 CVD를 이용하여 그래핀을 합성 하였으며, 광학현미경 조직사진을 이미지 조절 및 분석 가능한 소프트웨어를 활용하여 광학현미경 조직사진 상에서는 구분이 어려운 그래핀 합성에 따른 미세한 특성들을 이미지 분석을 통하여 구현하였다. 그래핀이 Cu 시편의 결정입계에서 핵 생성하여 Cu 입내로 성장하는 거동을 보이고, 그래핀 성장 시 그래핀 입계의 이동이 Cu 입계 및 기공과 상호작용하는 현상들에 대하여 설명하고, 결과적으로 야기되는 문제들의 원인과 결과를 논하였다.

• 한국세라믹학회지
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• 제35권8호
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• pp.827-835
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• 1998

Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.33-37
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• 2008

Kirkendall void는 전해도금 Cu/Sn-Ag 솔더 접합부에서 형성되었으며 Cu 도금욕에 함유되는 첨가제에 의존한다. 첨가제로 사용된 SPS의 함량의 증가와 함께 $150^{\circ}C$에서 열처리 후 많은 양의 Kirkendall void가 $Cu/Cu_3Sn$ 계면에 존재하였다. AES 분석은 void 표면에 S가 편석되어 있음을 보여주었다. $Cu/Cu_3Sn$ 계면을 따라 파괴된 시편에서 Cu, Sn, S peak만 검출되었고 AES 깊이 프로파일에서 S는 급격하게 감소하였다. $Cu/Cu_3Sn$ 계면에서 S 편석은 계면에너지를 낮추고 Kirkendall void 핵생성을 위한 에너지장벽을 감소시킨다. 낙하충격시험은 SPS를 사용하여 도금된 Cu의 경우 Kirkendall void가 형성된 $Cu/Cu_3Sn$ 계면에서 파괴가 진행되고 급격하게 신뢰성이 감소됨을 보였다.