Abstract
Using modified melt-textured grown targets, YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin films were prepared by pulsed laser deposition technique at the laser energy density from 1 J/cm$_2$ to 4 J/cm$_2$. All the films showed c-axis preferred orientations, however, a-axis outgrowths on the film surface were considerably increased with an increase of the laser energy density. To examine the origin of the a-axis outgrowth formation, the microstructures of films deposited at 2 J/cm$_2$ and 4 J/cm$_2$ were investigated using X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. It was shown that a significant number of Y$_2$O$_3$ inclusions were formed during the growth of c-axis oriented films at 4 J/cm$_2$. These inclusions formed nucleation sites for the a-axis outgrowths. It is considered that, due to the unstable growth conditions with a high flux density of incident vapor species and the strain induced by the surrounding c-axis films, the Y$_2$O$_3$ inclusions would prefer the nucleation of α-axis grains.