• Title/Summary/Keyword: Cu diffusion barrier

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Characteristics and Thermal Stabilities of W-B-C-N Diffusion Barrier by Using the Incorporation of Boron Impurities (Boron 불순물에 의한 W-B-C-N 확산방지막의 특성 및 열적 안정성 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.32-35
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    • 2008

  • Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

  • https://doi.org/10.4283/JKMS.2008.18.1.032 인용 PDF KSCI

Additional Impurity Roles of Nitrogen and Carbon for Ternary compound W-C-N Diffusion Barrier for Cu interconnect (Cu 금속 배선에 적용되는 질소와 탄소를 첨가한 W-C-N 확산방지막의 질소불순물 거동 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.348-352
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    • 2007

  • In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

  • https://doi.org/10.5757/JKVS.2007.16.5.348 인용 PDF KSCI