• 공업화학
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• 제5권3호
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• pp.385-394
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• 1994

세공분포가 서로 다른 두 종류(KHT, X-5)의 ${\gamma}$-알루미나 pellet에 아황산가스를 흡착 제거시킬 경우 반응이 진행되면서 각각의 세공벽에 반응생성층이 형성되어 반응속도 상수($K_v$), 세공률(${\varepsilon}_p$), 유효내부 확산계수($D_e$)의 변화와 세공반경이 줄어들어 세공막힘 현상이 일어나게 된다. 이들 영향을 고려하여 세공분포를 이용한 Random pore model로 최적반응온도 $450^{\circ}C$에서 산화구리의 각 담지농도(4, 6, 8, l0 wt%)와 아황산가스의 농도(1000, 2000ppm)에 대한 전환율을 수학적 모델로부터 계산하였다. 산화구리의 담지농도가 증가할수록 세공내의 유효반응 표면적과 세공률의 감소, 내부확산저항의 증가, 미세세공의 세공막힘 현상으로 전환율은 감소하였다. 총괄 전환율은 ${\gamma}$-알루미나 pallet의 표면 국부 전환율에 크게 의존하였으며 산화구리의 담지농도가 낮고 아황산가스의 농도가 클수록 증가하였다. 반응기에 유입되는 아황산가스의 유속은 반응초기 CuO의 전환율에 영향을 주었고 세공분포가 발달하여 세공율이 큰 ${\gamma}$-알루미나 pellet일수록 전환율은 높게 나타났다.

• 대한화학회지
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• 제20권6호
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• pp.494-499
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• 1976

추출폴라로그래프법을 이용하여 6가 크롬을 정량하는 방법에 대하여 검토하였다. 수용액중의 Cr(Ⅵ)을 초산완충용액 (pH = 5.4)에서 diethyldithiocarbamate를 킬레이트제로 사용하여 methylisobuthylketone용매로 추출하여, 이 추출액에 지지전해제로 sodium perchlorate를 넣어 직류 폴라로그램을 얻었다. 이 추출착물의 환원파는 확산지배적이었으며, 이 파의 반파전위는 -0.81 volts vs. SCE 였다. 이 환원파의 확산전류는 Cr(Ⅵ)의 양이 8 ppm 에서 160 ppm 까지의 농도범위에서 Cr(Ⅵ)의 농도에 비례하였다. 더욱이 2배량의 Cr(Ⅲ)이 공존해도 Cr(Ⅵ)의 정량에 별 영향이 없으므로 Cr(Ⅲ)와 Cr(Ⅵ)의 분별정량이 가능하며 또 Mn(Ⅱ), Cu(Ⅱ), Zn(Ⅱ), Ag(Ⅰ), Mg(Ⅱ), Ni(Ⅱ) 등이 약 1000배 정도 공존하여도 Cr(Ⅵ)의 정량에는 별 영향이 없었다

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• Journal of Welding and Joining
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• 제14권3호
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• pp.48-57
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• 1996

A study was made to examine the characteristics of base metal and stress relief cracking(SRC) of heat affected zone(HAZ) for HY-100 and Cu-bearing HSLA-100 steels. The Gleeble thermal/mechanical simulator was used to simulate the SRC/HAZ. The details of mechanical properties of base plate and SRC tested specimens were studied by impact test, optical microscopy and scanning electron microscopy. The specimens were aged at $650^{\circ}C$ for HSLA-100 steel and at $660^{\circ}C$ for HY-100 steel and thermal cycled from $1350^{\circ}C$ to $25^{\circ}C$ with a cooling time of $\Delta$t_${800^{circ}C/500^{circ}C}$=21sec. corresponds to the heat input of 30kJ/cm. The thermal cycled specimens were stressed to a predetermined level of 248~600MPa and then reheated to the stress relief temperatures of $570~620^{\circ}C$. The time to failure$(t_f)$ at a given stress level was used as a measure of SRC susceptibility. The strength, elongation and impact toughness of base plate were greater in HSLA-100 steel than in HY-100 steel. The time to failure was decreased with increasing temperature and/or stress. HSLA-100 steel was more susceptible to stress relief cracking than HY-100 steel under same conditions. It is thought to be resulted from the precipitation of $\varepsilon$-Cu phase by dynamic self diffusion of solute atoms. By the precipitation of $\varepsilon$-Cu phase, the differential strengthening of grain interior relative to grain boundary may be greater in the Cu-bearing HSLA-100 steel than in HY-100 steel. Therefore, greater strain concentration at grain boundary of HSLA-100 steel results in the increased SRC susceptibility. The activation energies for SRC of HSLA-100 steel are 103.9kcal/mal for 387MPa and 87.6kcal/mol for 437MPa and that of HY-100 steel is 129.2kcal/mol for 437MPa.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국표면공학회지
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• 제45권6호
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• pp.248-256
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• 2012

A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

• 전기화학회지
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• 제18권3호
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• pp.130-135
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• 2015

흑연 분말을 프탈로시아닌 또는 구리 프탈로시아닌과 함께 비활성 분위기에서 각각 열처리하여 표면처리를 진행하였고, 이의 속도특성과 저온 작동특성을 조사하였다. 표면처리 후 흑연 분말의 표면에 비정질 탄소와 구리의 코팅 층이 균일하게 형성되었다. 표면처리를 통하여 흑연 전극의 속도특성이 개선되는 것을 확인하였는데, 특히 구리 프탈로시아닌으로 처리한 경우 속도특성의 향상이 두드러졌다. 흑연 전극의 저항을 교류 임피던스와 펄스 저항측정법을 활용하여 조사하였는데, 구리 프탈로시아닌으로 처리된 흑연 전극의 경우가 저항이 가장 작았다. 프탈로시아닌으로 부터 유도된 비정질 탄소 층이 리튬이온의 확산을 용이하게 하고, 구리 프탈로시아닌으로부터 유도된 금속상태의 구리는 전자 전도도를 증가시키기 때문에 저항을 감소시키는 것으로 판단된다.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 자원환경지질
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• 제37권3호
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• pp.311-324
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• 2004

전라남도 보성강에 축조된 주암댐의 집수유역 내 하상퇴적물을 대상으로 중금속의 오염현황과 거동 특성을 알아보았다. 주암댐의 집수유역에는 많은 폐금속 및 탄광이 위치하고 있어 주암댐 호저퇴적물에 잠재적인 오염원으로 작용할 수 있다. 집수유역 내 하상퇴적물의 중금속 함량(Cr, Cu, Ni, Pb, Zn)은 매우 낮기 때문에 주암댐의 호저퇴적물에 영향을 줄 것으로 판단되지 않는다. 하지만 폐금속광산지역 내 하상퇴적물의 Pb 함량은 하류로 갈수록 증가하는 경향을 보여, Pb의 오염 확산이 우려된다. 폐금속광산의 환경을 고려한 강산성 조건의 용출실험결과, 하상퇴적물의 용출비로부터 결정된 중금속의 상대적 이동도는 Pb＞Zn=Cu＞Ni＞Cr으로서, Pb이 주암댐 호저퇴적물에 영향을 미치는 원소가 될 수 있음을 지시해준다. 한편 댐으로 유입한 퇴적물이 호저에 놓이게 되면(즉, 환원환경), Pb의 이동도가 비교적 높게 나타나 물-퇴적물 경계에서 Pb의 수중으로 재용출될 수 있다.

• Bulletin of the Korean Chemical Society
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• 제12권6호
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• pp.686-691
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• 1991

Emission quenching of photoexcited tris(${\alpha},{\alpha} '$-diimine)-ruthenium(II) complex cations, $RuL_3^{2+}$ (L: 2,2'-bipyridine, 4,4'-dimethyl-2,2'-bipyridine; 4,4'-diphenyl-2,2'-bipyridine; 1,10-phenanthroline; 5-methyl-1,10-phenanthroline; 5,6-dimethyl-1,10-phenanthroline or 4,7-diphenyl-1,10-phenanthroline) by $Cu^{2+}$, dimethylviologen $(MV^{2+})$, nitrobenzene (NB), and oxygen was studied in aqueous homogeneous and sodium dodecyl sulfate (SDS) micellar solutions. The apparent bimolecular quenching rate constants $k_q$ were determined from the quenching data and life-times of $^{\ast}RuL_3^{2+}$. In homogeneous media, the quenching rate was considerably slower than that for the diffusion-controlled reaction. The decreasing order of quenching activity of quenchers was $NB>O_2>MV^{2+}>Cu^{2+}$. The rate with $Cu^{2+}$ was faster as the reducing power of $^{\ast}RuL_3^{2+}$ is greater. On the other hand, the rates with NB and $O_2$ were faster as the ligand is more hydrophobic. This was attributed to the stabilization of encounter pair by van der Waals force. The presence of SDS enhanced the rate of quenching reactions with $Cu^{2+}$ and $MV^{2+}$, whereas it attenuated the quenching activity of NB and $O_2$ toward $RuL_3^{2+}$. The binding affinity of quenchers to SDS micelle and binding sites of the quenchers and $RuL_3^{2+}$ in micelle appear to be important factors controlling the micellar effect on the quenching reactions.