• Environmental Engineering Research
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• v.13 no.3
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• pp.131-135
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• 2008

In this study, Fe(VI) was employed as a multi-functional agent to treat the simulated industrial wastewater contaminated with Cu(II)-EDTA through oxidation of EDTA, decomplexation of Cu(II)-EDTA and subsequent removal of free copper through precipitation. The decomplexation of $10^{-4}\;M$ Cu(II)-EDTA species was performed as a function of pH at excess concentration of Fe(VI). It was noted that the acidic conditions favor the decomplexation of Cu(II)-EDTA as the decomplxation was almost 100% up to pH 6.5, while it was only 35% at pH 9.9. The enhanced degradation of Cu(II)-EDTA with decreasing the pH could be explained by the different speciation of Fe(VI). $HFeO_4^-$ and $H_2FeO_4$, which are relatively more reactive than the unprotonated species $FeO_4^{2-}$, are predominant species below neutral pH. It was noted that the decomplexation reaction is extremely fast and within 5 to10 min of contact, 100% of Cu(II)-EDTA was decomplexed at pH 4.0. However, at higher pH (i.e., pH 10.0) the decomplexation process was relatively slow and it was observed that even after 180 min of contact, maximum ca 37% of Cu(II)-EDTA was decomplexed. In order to discuss the kinetics of the decomplexation of Cu(II)-EDTA, the data was slightly fitted better for the second order rate reaction than the first order rate reaction in the excess of Fe(VI) concentration. On the other hand, the removal efficiency of free Cu(II) ions was also obtained at pH 4.0 and 10.0. It was probably removed through adsorption/coagulation with the reduced iron i.e., Fe(III). The removal of total Cu(II) was rapid at pH 4.0 whereas, it was slow at pH 10.0. Although the decomplexation was 100% at lower pH, the removal of free Cu(II) was relatively slow. This result may be explicable due to the reason that at lower pH values the adsorption/coagulation capacity of Fe(III) is greatly retarded. On the other hand, at higher pH values the decomplexation of Cu(II)-EDTA was partial, hence, slower Cu(II) removal was occurred.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.21 no.1
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• pp.57-67
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• 1997

The solidification process of Al 4.5%Cu alloy is numerically studied in the presence of contact resistance between mold and cast. Natural convection is considered in the liquid and mushy regions. The porosity approach is applied to the mushy zone modeling and linear variation of the solid fraction on the temperature is assumed. Results show that the mushy region is wider in the case with a contact resistance compared to the perfect contact condition. The temperature of the cast with a temporal variation in the contact heat transfer coefficient changes very rapidly in the early stage of the casting process compared to that with constant contact heat transfer coefficient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• Bulletin of the Korean Chemical Society
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• v.32 no.4
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• pp.1331-1335
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• 2011

We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, Xray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The $CuO_2$ and $Cu(OH)_2$ phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.20-24
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• 2015

We studied the relationship between the surface smoothness of the internal Cu ribbon and the morphology of the Sn-Pb plating layer for solar cell modules. A bumpy surface was observed on the surface of the solar ribbon, which caused irregular reflection of light. Large, Pb-rich, primary ${\alpha}$-phases were found below the convex surface of the solar ribbon, passing from the surface of the internal Cu ribbon to the surface of the plating layer. The primary ${\alpha}$-phases heterogeneously nucleated on the convex surface of the Cu ribbon, and then largely grew to the convex surface of the plating layer. The restriction of the primary ${\alpha}$-phase's formation was enabled by enhancing the smoothness of the Cu ribbon's surface; it was also possible to increase the adhesive strength and decrease contact resistance. We confirmed that the solar ribbon's surface smoothness depends on the internal Cu ribbon's surface smoothness.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1654-1656
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• 1996

Generallly speaking, busbar made with Cu or Cu alloys and producted by plastic manufacturing process. In this study, we reacarch the trend and manufacturing of Cu clad Al busbar for low cost and light weight which used for a electric power suply of distributing board. The objectives of this study is the trend of busbar on electric power supply, the process and application for Cu clad Al busbar and the relation between electric properites and manufacturing operating process on contact parties

• Journal of information and communication convergence engineering
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• v.13 no.4
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• Proceedings of the Korean Institute of Resources Recycling Conference
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• 2004.05a
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• pp.59-65
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• 2004

동제련 공정중 Smelting에서 SiO2가 없으면 산화에 의한 생성물은 Molten Cu-Fe-O 'Oxysulphide' 와 Solid Magnetite가 된다. 이 생성물은 Cu-rich Liquid와 Cu-dilute Liquid로 분리가 불가능하다. Smelting의 목적이 Cu가 높은 Matte와 산화된 불순물의 효과적인 분리에 있으므로 이와 같은 분리가 불가능한 혼합상태를 분리해 주어야 한다. 이때 SiO2가 첨가되면 Cu-rich 상인 Matte가 FeO-rich상인 Slag로의 분리가 가능해진다. 이러한 의미에서 동제련에 있어서 규사의 성분은 매우 중요하며 현재 재생사를 규사로 대체 사용하고 있다. 한편 실리콘 모노머 합성 공정인 금속 규소와 접촉 물질(Contact Mass, 구리촉매와 조촉매)을 반응시켜 (Si+CH3Cl ${\rightarrow}$ (CH3)2SiCl3) 실리콘 모노머를 생산하는 공정중 반응이 끝난 접촉물질인 구리 폐촉매가 발생되는데 주요성분이 Cu 12%, Si80%로 재생사와 유사하여 동제련에 투입 가능 여부를 판단하기 위하여 각 공정에서의 용융실험을 통하여 결론을 도출하였고, 실 조업 Test를 거쳐 처리하게 되므로 구리 회수 및 폐기물로써의 매립을 중지 할 수 있었다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1449-1451
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• 1997

Busbar made with Cu or Cu alloys and producted by Plastic manufacturing process. In this study, we research the manufacturing trend of Cu clad Al busbar for low cost and light weight which used for a electric power supply of distributing board. The objectives of this study is the manufacturing of composite busbar on electric power supply, the process and application for Cu clad Al busbar and the relation between electric properties and manufacturing operating process on contact parties.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.853-854
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• 2006

Warm compaction powder metallurgy was used to produce a $Ti_3SiC_2$ particulate reinforced Cu matrix composite. Fabrication parameters and warm compaction behaviors of Cu powder were studied. Based on the optimized fabrication parameters a Cu-based electrical contact material was prepared. Results showed that in expend of some electrical conductivity, addition of $Ti_3SiC_2$ particulate increased the hardness, wear resistivity and anti-friction ability of the sintered Cu-base material.