• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1516-1518
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• 1998

$YBa_2Cu_3O_x$(Yl23) Superconducting thick films on $Y_2BaCuO_5$(Y211) substrate were Prepared by surface diffusion process between $BaCuO_2$+CuO composite coating powder and a Y2ll substrate. X-ray diffraction shows that the Yl23 layer onto Y2ll substrate is the orthorhombic crystal structure. The specimen heated at $940^{\circ}C$ for 2h showed the maximum $J_c$ fo 500A/$cm^2$. Based on optimal condition, the superconducting fault current limiter(FCL) having a current limiting area 1mm wide and 66mm long was fabricated on Y211 substrate. A typical current limiting waveform was measured. When a voltage of 3V was applied, the fault current with a peak of 15A was limited to about 0.11A.

• BMB Reports
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• 제32권3호
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• pp.226-231
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• 1999

In vitro effects of acetone on cytochrome P450 (P450)-dependent benzo(a)pyrene (B(a)P) hydroxylation supported by cumene hydroperoxide (CuOOH) or NADPH/$O_2 $ systems were studied using 3-methylcholanthrene-pretreated rat liver microsomes. The maximal rate of B(a)P hydroxylation at constant concentration ($80\;{\mu}M)$ of the substrate was observed in the presence of $30\;{\mu}M$ CuOOH. However, at concentrations higher than $30\;{\mu}M$ CuOOH the hydroxylation rates were rapidly decreased. In contrast to CuOOH, at a concentration of $200\;{\mu}M$ NADPH, B(a)P hydroxylation rate reached a plateau. At concentrations higher than $200\;{\mu}M$ NADPH, the rates of substrate hydroxylation were maintained at the maximal rate with no inhibition. Acetone at 1% (v/v) enhanced both CuOOH- and NADPH/$O_2$-supported B(a)P hydroxylation at the optimal concentrations of the cofactors. At concentrations higher than 1% (v/v) acetone, substrate hydroxylation was sterero specific under the support of these two cofactors; it was strongly enhanced with $30\;{\mu}M$ CuOOH, but rather inhibited in the $200\;{\mu}M$> NADPH/$0_2 $ system. The lipid peroxidation rate induced during CuOOH-supported P450-dependent B(a)P hydroxylation was increased as CuOOH concentrations were increased. Acetone in the concentration range of 2.5~7.5%(v/v) inhibited lipid peroxidation during CuOOH supported B(a)P hydroxylation. The finding that CuOOH-supported B(a)P hydroxylation is greatly enhanced by acetone suggests that acetone may contribute more to the activation of oxygen (for the insertion of oxygen into the substrate) in the presence of CuOOH than with NADPH/$O_2$. Acetone may also contribute to the partial inhibition of destruction of microsomal membranes by lipid peroxidation.

• Current Photovoltaic Research
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• 제2권3호
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• 한국재료학회지
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• 제24권1호
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• pp.19-24
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• 2014

We report the nitrogen monoxide (NO) gas sensing properties of p-type CuO-nanorod-based gas sensors. We synthesized the p-type CuO nanorods with breadth of about 30 nm and length of about 330 nm by a hydrothermal method using an as-deposited CuO seed layer prepared on a $Si/SiO_2$ substrate by the sputtering method. We fabricated polycrystalline CuO nanorod arrays at $80^{\circ}C$ under the hydrothermal condition of 1:1 morality ratio between copper nitrate trihydrate [$Cu(NO_2)_2{\cdot}3H_2O$] and hexamethylenetetramine ($C_6H_{12}N_4$). Structural characterizations revealed that we prepared the pure CuO nanorod array of a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the gas sensing measurements that the p-type CuO nanorod gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as $200^{\circ}C$. We also found that these CuO nanorod gas sensors showed reversible and reliable electrical response to NO gas at a range of operating temperatures. These results would indicate some potential applications of the p-type semiconductor CuO nanorods as promising sensing materials for gas sensors, including various types of p-n junction gas sensors.

• 한국주조공학회지
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• 제22권2호
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• pp.89-96
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• 2002

This study examined the effects of adding Zn to Sn-3.5Ag solder on the microstructure changes and behavior of interface reaction of the solder joint with Cu substrate. The solder/Cu joints were examined with microscope to observe the characteristics of microstructure changes and interfacial reaction layer with aging treatment for up to 120 days at $150^{\circ}C$. Results of the microstructure changes showed that the microstructures were coarsened with aging treatment, while adding 1%Zn suppresses coarsening microstructures. The Sn-3.5Ag/Cu had a fast growth rate of the reaction layer in comparison with the Sn-3.5Ag-1Zn at the aging temperature of $150^{\circ}C$. Through the SEM/EDS analysis of solder joint, it was proved that intermetallic layer was $Cu_6Sn_5$ phase and aged specimens showed that intermetallic layer grew in proportion to $t^{1/2}$, and the precipitate of $Ag_3Sn$ occur to both inner layer and interface of layer and solder. In case of Zn-containing composite solder, $Cu_6Sn_5$ phase formed at the side of substrate and Cu-Zn-Sn phase formed at the other side in double layer. It seems that Cu-Zn-Sn phase formed at solder side did a roll of banrier to suppress the growth of the $Cu_6Sn_5$ layer during the aging treatment.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 추계학술발표대회 개요집
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• pp.37-39
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• 2004

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.72-73
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• 2003

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.89-90
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• 2003

• 대한금속재료학회지
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• 제47권1호
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• 한국재료학회지
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• 제23권9호
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• pp.477-482
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• 2013

We investigated the detection properties of nitrogen monoxide (NO) gas using transparent p-type $CuAlO_2$ thin film gas sensors. The $CuAlO_2$ film was fabricated on an indium tin oxide (ITO)/glass substrate by pulsed laser deposition (PLD), and then the transparent p-type $CuAlO_2$ active layer was formed by annealing. Structural and optical characterizations revealed that the transparent p-type $CuAlO_2$ layer with a thickness of around 200 nm had a non-crystalline structure, showing a quite flat surface and a high transparency above 65 % in the range of visible light. From the NO gas sensing measurements, it was found that the transparent p-type $CuAlO_2$ thin film gas sensors exhibited the maximum sensitivity to NO gas in dry air at an operating temperature of $180^{\circ}C$. We also found that these $CuAlO_2$ thin film gas sensors showed reversible and reliable electrical resistance-response to NO gas in the operating temperature range. These results indicate that the transparent p-type semiconductor $CuAlO_2$ thin films are very promising for application as sensing materials for gas sensors, in particular, various types of transparent p-n junction gas sensors. Also, these transparent p-type semiconductor $CuAlO_2$ thin films could be combined with an n-type oxide semiconductor to fabricate p-n heterojunction oxide semiconductor gas sensors.