• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.187-195
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• 1991

Adhesion strength of electroless-plated Ni, Ni-P and Cu deposites on alumina substrate has been studied. Grain boundary spaces produced on the substrate surface by etching treatment provided anchoring sites for enhancing the adhesion strength. Adhesion strengths of Ni-P and Ni deposit were higher than that of Cu deposit, because of higher initial nucleation rates than the latter. The electroless-plated Ni-P and Ni underlayer improved the adhesion strength of the Cu deposit. In could be attributed to the enhanced adhesion between the substrate and those underlayers as well as the satisfactory adhesion between Cu deposits and those underlayers. Heat treatment was also conducted in order to enhance the adhesion strength of Cu layer. The strength was enhanced by about 19% when the treatment was conducted at $150^{\circ}C$ for 2 hours. The enhancement was attributed to relief of internal stress and release of hydrogen.

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.230-232
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• 2006

Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.8
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• pp.1063-1067
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• 1995

The superconducting properties of YBa$_{2}$Cu$_{3}$$O_{7-x}$(YBaCuO) thin films prepared by laser ablation have been investigated. The x-ray diffraction patterns and surface morphology of the films were substantially different from one another. The compositional ratios of YBaCuO films were controlled by the conditions of the target-substrate distance. The YBaCuO films manufactured on MgO(100) substrate were indicated T$_{c}$(zero)=91.2 K, T$_{c}$(onset)=93 K, and J$_{c}$=3.5*10$^{5}$ A/cm$^{2}$(at 77.3K). The optimum conditions were found to be a substrate temperature of 710 .deg. C, a energy density of 2 J/cm$^{2}$, and a target-substrate distance of 60 mm in an oxygen partial pressure of 200 mTorr.0 mTorr.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.61-67
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• 2020

In this paper, we calculated the warpage of bare substrates and chip attached substrates by using FEM (Finite Element Method), and compared and analyzed the effect of the chips' attachment on warpage. Also, the effects of layer thickness of substrates for reducing warpage were analyzed and the conditions of layer thickness were analyzed by signal-to-noise ratio of Taguchi method. According to the analysis results, the direction of warpage pattern in substrates can change when chips are attached. Also, the warpage decreases as the difference in the CTE (coefficient of thermal expansion) between the top and bottom of the package decreases and the stiffness of the package increases after chips are loaded. In addition, according to the impact analysis of design parameters on substrates where chips are not attached, in order to reduce warpage, the inner layers of the circuit layer Cu1 and Cu4 has be controlled first, and then concentrated on the thickness of the solder resist on the bottom side and the thickness of the prepreg layer between Cu1 and Cu2.

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.11a
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• pp.45-45
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• 1994

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.361-366
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• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.