• Progress in Superconductivity and Cryogenics
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• v.24 no.4
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• pp.16-24
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• 2022

Applications of REBa₂Cu₃O_7-δ tapes require joints with a simple manufacturing process, low resistance and good mechanical properties. In the present study, we successfully developed a copper diffusion joint between Cu-stabilized REBa₂Cu₃O_7-δ tapes that meets the above requirements without solder simply by applying flux, heat and pressurization. After a 3 min thermocompression process at approximately 150 δ and 336 MPa in air, two tapes were directly connected between Cu stabilizers by copper diffusion, which was proven by microstructure analysis. The specific resistivity of the copper diffusion joint reached 5.8 nΩ·cm² (resistance of 0.4 nΩ for a 306 mm splicing length) at 77 K in the self-field. The axial tensile stress reached 200 N without critical current degradation. The results show promise for the preparation of copper diffusion joints to be used in coils, attached tapes, and wire/cable terminals.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.134-137
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• 2009

Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type $Cu_2ZnSnSe_4$ compound by means of solid state reaction. $Cu_2ZnSnSe_4$ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and $CuSe_2$ phases at low reaction temperature. The formation of $Cu_5Zn_8$ intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at $320^{\circ}C$ reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of $Cu_2ZnSnSe_4$ was was detected to begin at $300^{\circ}C$ and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between $Cu_2SnSe_3$ and ZnSe.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1654-1656
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• 1996

Generallly speaking, busbar made with Cu or Cu alloys and producted by plastic manufacturing process. In this study, we reacarch the trend and manufacturing of Cu clad Al busbar for low cost and light weight which used for a electric power suply of distributing board. The objectives of this study is the trend of busbar on electric power supply, the process and application for Cu clad Al busbar and the relation between electric properites and manufacturing operating process on contact parties

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.464-467
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• 2005

BiSrCaCuO superconducting ceramic thick films were fabricated by chemical process. The x ray diffraction pattern of the BiSrCaCuO thick films contained 110 K phase. The critical temperature of BiSrCaCuO thick films were Tc=95 K-97 K. The critical temperature and critical density of BiSrCaCuO thick film grown at $750 {\circ}C$ were Tc = 95 K and $Jc= 7{\times}10^{6} A/cm^{2}$ We obtained high-Jc as-grown BiSrCaCuO on an MgO substrate by low fressure CVD.

• Applied Chemistry for Engineering
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• v.31 no.5
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• pp.475-480
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• 2020

Chelates synthesized with Cu(II) ion and lactic acid or chitosan were applied to the hydrolysis of organophosphate simulant, DFP (diisopropyl fluorophosphate). Under the homogeneous reaction condition, Cu(II)-lactic acid chelate hydrolyzed DFP with the half life time of 37.1 min. Cu(II)-LMWS chitosan chelate was synthesized with 1 kDa molecular weight of chitosan, which showed low solubility, and then crystallized. The half life time for hydrolyzing DFP using Cu(II)-LMWS chitosan was 32.9 h indicating that the reaction rate is enhanced as much as 16 times more than that of using 18 kDa chitosan-Cu(II) complex. Under the homogeneous reaction condition, the half life time of Cu(II)-LMWS chitosan was 8.75 h. Therefore, we found out that the solubility of Cu(II)-LMWS chitosan makes the difference in the reaction rate as much as 4 times.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.384-388
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• 2008

Hydrogen production via high high-temperature steam electrolysis consumes less electrical energy than compared to conventional low low-temperature water electrolysis, mainly due to the improved thermodynamics and kinetics at elevated temperaturetemperatures. The elementalElemental powders of Cu, Ni, and YSZ are were used to synthesize high high-temperature electrolysis cathodecathodes, of Ni/YSZ and Cu/YSZ composites, by mechanical alloying. The metallic particles of the composites were uniformly covered with finer YSZ particles. Sub-micron sized pores are were homogeneously dispersed in the Ni/YSZ and Cu/YSZ composites. In this study, The cathode materials were synthesized and their Characterizations properties were evaluated in this study: It was found that the better electric conductivity of the Cu/YSZ composite was measured improved compared tothan that of the Ni/YSZ composite. Slight A slight increase in the resistance can be produced for in a Cu/YSZ cathode by oxidation, but it this is compensated offset for by a favorable thermal expansion coefficient. Therefore, Cu/YSZ cermet can be adequately used as a suitable cathode material of in high high-temperature electrolysis.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.5
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• pp.217-220
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• 2005

We have fabricated a superconducting YBCO system according to the pyrolysis method and low pressure apparatus. In our experiment, the X-ray diffraction pattern of the non doped YBaCuO layer indicated that the superconductor contained only 90K phase crystal. The critical temperature and critical current density for a thick layer at $650^{\circ}C$ were Tc=90 K and $Jc=6{\times}10^{4}A/cm^2$ at 90K. In low pressure apparatus, the 90 K phase YBaCuO was grown at a lower temperature compared with the normal system. Tc and Jc at $650^{\circ}C$ were Tc = 90 K and $Jc=6{\times}10^{4}A/cm^2$ at 90K.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.481-486
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• 2002

We have investigated the effects of plating materials for Cu lead (Sn-lOPb, AwPdJNi, Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu) on properties of QFP joints using a Sn-8Zn-3Bi solder. The results were compared with the joints using Sn-3. 5Ag-0. 7Cu and Sn-37Pb solders. As a result, the joints with the Sn-3.5Ag, Sn-3Bi and Sn-0.7Cu plated Cu lead had the reliability comparable to those of the Sn-3.5Ag-0.7Cu and Sn-37Pb soldered joints with respect to the joint strength after the high temperature holding tests at 348K to 423k. In particular, the joint with the Sn-3.5Ag plated Cu lead had the best reliability. This is caused by the low growth rate of a Cu-Sn interfacial reaction layer that degrades the joint strength of the soldered joints. Consequently, the Sn-3.5Ag plating was found to be most feasible plating for the Sn-8Zn-3Bi soldered joint.