• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.1
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• pp.6-14
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• 2011

The re-crystallization process for recovering granular crystalline gypsum from phospho-gypsum have proposed. The process consists of two stages; at the first stage, needle-like fine gypsum is recovered with under-product of 325 mesh wet screening after the speedy hydration of dehydrated phospho-gypsum, and at the second stage, granular crystalline gypsum is recovered with upper-product of 325 mesh wet screening after dehydration and re-crystallization of the needle-like fine gypsum in $Na_2SO_4$ solution. This paper is mainly focused on the influence of dehydration time, cooling speed of temperature and re-crystallization temperature on the recovery of granular crystalline gypsum. And the re-crystallization velocity of needle-like fine gypsum at room temperature and the variation of $Ca^{2+}$ concentration of gypsum slurry during over all re-crystallization process were also discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• Resources Recycling
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• v.12 no.4
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• pp.20-29
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• 2003

In order to efficiently recycle the waste solution resulting from shadow mask processing, nano-sized Ni-ferrite powder was fab-ricated through spray pyrolysis process. The average particle size of the powder was below 100nm. In this study, the effects of the reaction temperature. the concentration of raw material solution and the injection speed of solution on the properties of powder were respectively investigated. As the reaction temperature increased from $800^{\circ}C$ to $1100^{\circ}C$, average particle size of the powder significantly Increased and power structure became more solid, whereat its specific surface area was greatly reduced. Formation rate and crystallization of($NiFe_2$$O_4$) phale increased along with the temperature rise. As the concentrations of iron and nickel components in wastere solution increased, particle size of the powder became larger, particle size distribution became more irregular, and specific surface area was reduced. Formation rate and crystallization of $NiFe_2$$O_4$ phase increased significantly along with the increase of the concentration of solution. As the inlet speed of solution increased, particle size of the powder became larger, particle size distribution became wider, specific surface area was reduced and powder structure became less solid. As the inlet speed of solution decreased, formation rate and crystallization of $NiFe_2$$O_4$ phase significantly increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.897-897
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• 2005

We report QLA (Quenching-rate controlled Laser Annealing) system as new concept using pulsed DPSSL and CW lasers. This process can control temperature quenching-rate of poly-Si crystallization by additional CW laser and fabricate high quality poly-Si with faster scanning speed than conventional processes. In this paper, QLA system, the experimental results and theoretical discussion will be introduced.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.433-440
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• 2005

The hydrogen sorption speed of $Zr_{57}V_{36}Fe_7$ nanocrystalline and amorphous alloys was evaluated at room temperature. Nanocrystalline alloys of $Zr_{57}V_{36}Fe_7$ were prepared by planetary ball milling. The hydrogen sorption speed of nanocrystalline alloys was higher than that of the amorphous alloy. The enhanced sorption speed of nanocrystalline alloys was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation can be reduced by formation of nanocrystals, which results in the observed increase in sorption properties.

• Composites Research
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• v.35 no.2
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• pp.93-97
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• 2022

The application of infrared heating in the hot press forming of the thermoplastic composites is conducive to productivity with high-speed heating. However, high energy, high forming temperature, and high-speed heating derived from infrared heating can cause material degradation and deteriorate properties such as re-melting performance. Therefore, this study was conducted to optimize the process conditions of the hot press forming suitable for carbon fiber reinforced polyetherketoneketone(CF/PEKK) composites that are actively researched and developed as high-performance aviation materials. Specifically, the degradation mechanisms and properties that may occur in infrared high-speed heating were evaluated through morphological and thermal characteristics analysis and mechanical performance tests. The degradation mechanism was analyzed through morphological investigation of the crystal structure of PEKK. As a result, the size of the spherulite decreased as the degradation progressed, and finally, the spherulite disappeared. In thermal characteristics, the melting temperature, crystallization temperature and heat of crystallization tend to decrease as degradation progresses, and the crystal structure disappeared under long-term exposure at 460℃. In addition, the low bonding strength was observed on the degraded surface, and the bonding surfaces of PEKK did not melt intermittently. In conclusion, it was confirmed that the CF/PEKK composite material degraded at 420℃ in the infrared high-speed heating. Furthermore, the spherulite experienced morphological changes and the re-melting properties of thermoplastic materials were degraded.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.629-637
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• 2008

We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.419-420
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• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

• Proceedings of the IEEK Conference
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• 2001.10a
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• pp.342-348
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• 2001

This study was conducted to obtain granular crystalline gypsum that can be used as raw material for plaster boards or cements from waste Plaster board. We could disintegrate preferentially gypsum to gypsum needle in 10${\mu}{\textrm}{m}$ or less size among the contents of waste plaster board (gypsum, paper, fiber, and inorganic material .etc.) by hydration afterwards the dehydration of crushed waste plaster board. In this case, the optimum conditions for minimizing the size of gypsum were dehydration rate of 75%~ 85%, hydration concentration of 10~20%, agitation speed of 250~400rpm, crushing size of 2cm or less. Gypsum of 98.21% grade was recovered with 99.0% yield from under screenings of 325mesh wet screening which followed by the dehydration-hydration process performed in the conditions of dehydration rate of 80%, hydration concentration of 15%, agitation speed of 300rpm, crushing size of 2cm or less. Subsequently, Plate-like Crystalline gypsum of is 151${\mu}{\textrm}{m}$ size and the grade of 99.49% with the Yield of 98.0% from the upper screenings of 270mesh wet screening carried out after the re-crystallization of the recovered gypsum needle slurry.