Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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An evaluation on crystallization of amorphous (InTe)x(GeTe)y thin films by nano-pulse illumination

나노-펄스 노출에 따른 비정질(InTe)x(GeTe)y박막의 결정화 속도 평가

  • Song, Ki-Ho (Center for Functional Nano Fine Chemicals in the Chonnam National Univ.) ;
  • Seo, Jae-Hee (Center for Functional Nano Fine Chemicals in the Chonnam National Univ.) ;
  • Lee, Hyun-Yong (Center for Functional Nano Fine Chemicals in the Chonnam National Univ.)
  • 송기호 (전남대학교 기능성 나노 신화학소재 사업단) ;
  • 서재희 (전남대학교 기능성 나노 신화학소재 사업단) ;
  • 이현용 (전남대학교 기능성 나노 신화학소재 사업단)
  • Published : 2008.11.06
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Abstract

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

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